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ZVP3306A

Diodes Incorporated

ZVP3306A by Diodes Incorporated

ZVP3306A by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, 0.16A Drain Current, and 14 ohm On Resistance. It is used in applications requiring low power dissipation, such as signal amplification in electronic circuits.

Median Price

$1.058

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 2,879 parts In-Stock

1+ parts

$0.876

100+ parts

$0.588

1k+ parts

$0.479

10k+ parts

$0.472

2,879

$0.876

$0.588

$0.479

$0.472

Farnell

UK . 1,068 parts In-Stock

1+ parts

$1.240

100+ parts

$0.424

1k+ parts

$0.311

10k+ parts

$0.267

1,068

$1.240

$0.424

$0.311

$0.267

Mouser Electronics

USA . 10,184 parts In-Stock

1+ parts

$1.310

100+ parts

$0.538

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-

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10,184

$1.310

$0.538

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Adafruit Industries

USA . 900 parts In-Stock

1+ parts

$2.336

100+ parts

$2.126

1k+ parts

$1.916

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900

$2.336

$2.126

$1.916

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Arrow

USA . 2,725 parts In-Stock

1+ parts

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$0.328

10k+ parts

$0.280

2,725

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$0.328

$0.280

Verical

USA . 2,725 parts In-Stock

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$0.360

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2,725

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$0.360

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Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$0.378

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300

$0.378

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TME

Poland . 3,140 parts In-Stock

1+ parts

$1.220

100+ parts

$0.474

1k+ parts

$0.348

10k+ parts

$0.335

3,140

$1.220

$0.474

$0.348

$0.335

Ace Electronics

USA . 2,750 parts In-Stock

1+ parts

$2.000

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2,750

$2.000

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 6,090 parts In-Stock

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NAC Semi

USA . 4,000 parts In-Stock

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$0.402

4,000

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$0.402

Lantek

USA . 3,000 parts In-Stock

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3,000

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ComSIT Distribution GmbH

Germany . 2,600 parts In-Stock

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2,600

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Vyrian

USA . 1,831 parts In-Stock

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1,831

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Chip Stock

USA . 882 parts In-Stock

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882

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Holdelec - ElecDif-Pro

France . 462 parts In-Stock

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462

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Jameco Electronics

USA . 200 parts In-Stock

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200

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ABC Electronics Ltd.

UK . 74 parts In-Stock

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74

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Avant Electronics Limited

UK . 57 parts In-Stock

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57

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Electronic Expediters

USA . 52 parts In-Stock

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52

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Semi Source

USA . 50 parts In-Stock

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50

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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50

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Component Sense

UK . 26 parts In-Stock

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26

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LWI Electronics Inc

India . 18 parts In-Stock

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18

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Ashlea Components Ltd

UK . 6 parts In-Stock

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6

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LittleDiode

UK . 2 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 3,274 parts In-Stock

1+ parts

$0.378

100+ parts

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$0.370

3,274

$0.378

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$0.370

Argo Parts USA

USA . 734 parts In-Stock

1+ parts

$0.378

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$0.367

734

$0.378

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$0.367

Corohmni

South Africa . 20 parts In-Stock

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$0.602

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20

$0.602

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Component Stockers USA

USA . 26,011 parts In-Stock

1+ parts

$0.790

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$0.340

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$0.300

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26,011

$0.790

$0.340

$0.300

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Aztec Data Supply Inc.

USA . 2,576 parts In-Stock

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$1.284

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2,576

$1.284

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Advanced Electronics

New Zealand . 900 parts In-Stock

1+ parts

$2.336

100+ parts

$2.126

1k+ parts

$1.916

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900

$2.336

$2.126

$1.916

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Microchip USA

USA . 5,985 parts In-Stock

1+ parts

$5.200

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5,985

$5.200

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Perfect Parts

USA . 28,822 parts In-Stock

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28,822

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Robosynatics

Brazil . 25,165 parts In-Stock

1+ parts

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100+ parts

$1.864

1k+ parts

$1.826

10k+ parts

$1.826

25,165

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$1.864

$1.826

$1.826

Lucentia Tech

USA . 25,165 parts In-Stock

1+ parts

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100+ parts

$1.864

1k+ parts

$1.826

10k+ parts

$1.826

25,165

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$1.864

$1.826

$1.826

Kepictronics

USA . 21,800 parts In-Stock

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21,800

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Lixinc

USA . 17,000 parts In-Stock

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17,000

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iodParts Technologies Inc.

India . 4,938 parts In-Stock

1+ parts

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$0.510

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4,938

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$0.510

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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Cyclops Electronics Ltd (Excess)

UK . 202 parts In-Stock

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202

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Overview

Discover the innovative ZVP3306A by Diodes Incorporated, a top-quality P-channel Small Signal Field Effect Transistor designed to enhance your electronic projects. With a maximum drain current of 0.16 A and a minimum DS breakdown voltage of 60 V, this transistor offers exceptional performance in a variety of applications. Whether you're working on amplifiers, switches, or voltage converters, the ZVP3306A delivers reliability and efficiency. Trust Diodes Incorporated's expertise and experience in semiconductor technology to bring you a product that exceeds expectations. Upgrade your designs with the ZVP3306A and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the FET, ensuring reliability in various operating conditions.

Polarity or Channel Type: P-CHANNEL

P-channel FETs offer advantages in certain circuit applications, providing flexibility and efficiency.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to work with in various electronic projects.

Minimum DS Breakdown Voltage: 60 V

Higher breakdown voltage allows for handling of higher voltage levels, increasing the versatility of the FET.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer simplicity in circuit design and can be easily controlled with lower voltage signals.

Maximum Drain Current (Abs) (ID): 0.16 A

This high maximum drain current allows for handling higher current loads, making it suitable for a variety of applications.

Transistor Element Material: SILICON

Silicon-based FETs offer high performance and reliability, making them a preferred choice in many electronic circuits.

Maximum Operating Temperature: 150 °C

Can operate effectively in a wide range of temperature environments, ensuring stability in various conditions.

Maximum Drain-Source On Resistance: 14 ohm

Low on-resistance leads to lower power dissipation and heat generation, improving efficiency in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP3306A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.16 A

Maximum Drain Current (ID):

.16 A

Maximum Drain-Source On Resistance:

14 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

8 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

ZVP3306A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-375-6680, 5961013756680

NIIN

013756680

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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