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ZVP3310F

Diodes Incorporated

ZVP3310F by Diodes Incorporated

Diodes Inc. ZVP3310F is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.075A Drain Current, and 20Ω On Resistance. Ideal for small outline packages requiring high temp operation up to 150°C.

Median Price

$0.318

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 11,723 parts In-Stock

1+ parts

$0.643

100+ parts

$0.382

1k+ parts

-

10k+ parts

-

11,723

$0.643

$0.382

-

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Element14

Singapore . 13,635 parts In-Stock

1+ parts

-

100+ parts

$0.318

1k+ parts

$0.305

10k+ parts

$0.299

13,635

-

$0.318

$0.305

$0.299

Farnell

UK . 12,795 parts In-Stock

1+ parts

-

100+ parts

$0.252

1k+ parts

$0.244

10k+ parts

$0.240

12,795

-

$0.252

$0.244

$0.240

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.347

100+ parts

-

1k+ parts

-

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650

$0.347

-

-

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Vyrian

USA . 13,364 parts In-Stock

1+ parts

-

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13,364

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EMSNET

USA . 4,022 parts In-Stock

1+ parts

-

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4,022

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Bristol Electronics

USA . 1,329 parts In-Stock

1+ parts

-

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1,329

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Atlantic Semiconductor

USA . 1,329 parts In-Stock

1+ parts

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1,329

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ECAB

Sweden . 45 parts In-Stock

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45

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 13,124 parts In-Stock

1+ parts

$0.270

100+ parts

$0.263

1k+ parts

$0.262

10k+ parts

-

13,124

$0.270

$0.263

$0.262

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Argo Parts USA

USA . 3 parts In-Stock

1+ parts

$0.347

100+ parts

-

1k+ parts

-

10k+ parts

$0.336

3

$0.347

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-

$0.336

Corohmni

South Africa . 29 parts In-Stock

1+ parts

$1.203

100+ parts

-

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29

$1.203

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Aztec Data Supply Inc.

USA . 3,374 parts In-Stock

1+ parts

$1.900

100+ parts

-

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3,374

$1.900

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.952

100+ parts

$1.776

1k+ parts

$1.601

10k+ parts

-

2,000

$1.952

$1.776

$1.601

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Perfect Parts

USA . 6,431 parts In-Stock

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6,431

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Continental Prestige Electronics

USA . 6,206 parts In-Stock

1+ parts

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100+ parts

$0.300

1k+ parts

$0.225

10k+ parts

$0.211

6,206

-

$0.300

$0.225

$0.211

Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.340

1k+ parts

$0.329

10k+ parts

$0.322

1,000

-

$0.340

$0.329

$0.322

Overview

Experience the superior quality and performance of the ZVP3310F by Diodes Incorporated, a leading manufacturer in the industry. This small signal field effect transistor is perfect for switching applications, offering reliable operation and efficiency. With a high DS breakdown voltage and low power dissipation, this P-channel transistor provides excellent value and benefits to customers looking for a dependable solution. Trust in Diodes Incorporated for innovative technology and top-notch products that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their high input impedance, making them suitable for switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient and reliable performance in such scenarios.

Surface Mount: YES

Being surface mountable makes installation and soldering easier, saving time and effort during assembly.

Minimum DS Breakdown Voltage: 100 V

The high breakdown voltage ensures the transistor can handle a wide range of voltages without failing, increasing its versatility.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on circuit boards, optimizing space usage.

Terminal Form: GULL WING

The gull wing terminal form enables secure and reliable connections, preventing any potential signal loss or malfunction.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers high input impedance and low input current, improving overall performance and efficiency.

Maximum Drain Current (ID): 0.075 A

With a maximum drain current of 0.075 A, this transistor can handle moderate current levels, suitable for many applications.

No. of Terminals: 3

Having three terminals allows for versatile connections and configurations in electronic circuits.

Maximum Power Dissipation (Abs): 0.33 W

The high maximum power dissipation rating ensures the transistor can handle heat well and operate reliably under various conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability in field-effect transistors, ensuring optimal functionality.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to function in a wide range of environments without overheating.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its high conductivity and reliability, ensuring stable performance.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish provides excellent solderability and corrosion resistance, enhancing the longevity of the transistor.

Maximum Drain-Source On Resistance: 20 ohm

The low drain-source on resistance minimizes power loss and improves efficiency in the transistor's operation.

Terminal Position: DUAL

Dual terminal position allows for versatile connections and circuit configurations, enhancing the transistor's adaptability.

Maximum Time At Peak Reflow Temperature (s): 30

Being able to withstand peak reflow temperatures for up to 30 seconds ensures the transistor's reliability during soldering processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C guarantees the solder joints' integrity and durability.

Maximum Feedback Capacitance (Crss): 5 pF

The low feedback capacitance minimizes signal distortion and ensures efficient signal transmission in the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP3310F attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

.075 A

Maximum Drain Current (ID):

.075 A

Maximum Drain-Source On Resistance:

20 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVP3310F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-99-257-9069, 5961992579069

NIIN

992579069

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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