Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Shape: SQUARE; Peak Reflow Temperature (C): 235;
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Small Signal Field Effect Transistors (FET) ZVP3310DWP attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Element Material:
ZVP3310DWP Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
C0805C104K5RACTU
KEMET Corporation
KEMET C0805C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and reliable performance.
1N4148
Digitron Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Microchip Technology
1N4148WS
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002,215
NXP Semiconductors
2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.
EU2B-YS3203C
Idec
ROTARY SWITCH;
LL4148
Continental Device India
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM107H/883
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
2N2222A
Ksl Microdevices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
M39029/56-351
TE Connectivity
TE Connectivity's M39029/56-351 is a CRIMP contact type backshell accessory with rated voltage of 115V. It operates b/w -65 to 175 °C, suitable for MIL-C-39029/56 connectors with wire gauge ranging from 28 to 22 AWG. Ideal for military applications requiring female contacts and copper alloy material.
BAV99W-7-F
Diodes Incorporated
Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.
SMBJ18CA
Daco Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
Thinking Electronic Industrial
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
International Devices
M24308/2-1F
Tyco Electronics Amp
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; IEC Conformity: NO; Mixed Contacts: NO; Empty Shell: NO;
Mde Semiconductor
Tak Cheong Electronics Holdings
SQ2309ES-T1_GE3
Vishay Intertechnology
The Vishay Intertechnology SQ2309ES-T1_GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 1.7A max drain current. Ideal for applications requiring small outline, it operates in enhancement mode with 0.335 ohm RDS(on) and features built-in diode in a gull wing package.
SI2312CDS-T1-GE3
SI2312CDS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 20V DS breakdown voltage and 6A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.1W. The small outline package style and dual terminal position make it suitable for surface mount designs.
2N7002DWQ-13-F
Diodes Inc. 2N7002DWQ-13-F is a N-channel FET with 60V DS breakdown voltage, 0.23A max drain current, and 7.5 ohm max on resistance. Ideal for switching applications in small outline packages at up to 150°C operating temp.
FDC3601N
Onsemi
FDC3601N by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 100V, Max Drain Current of 1A, and Max Power Dissipation of 0.7W. With a package style of SMALL OUTLINE and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
SI2356DS-T1-GE3
SI2356DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 40V DS breakdown voltage and 4.3A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.051 ohm on-resistance. The small outline package features gull wing terminals and can withstand temperatures from -55 to 150°C.
SI2309CDS-T1-GE3
SI2309CDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 1.6A Drain Current, and 0.345 ohm On Resistance. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 1.7W and operates b/w -55 to 150 °C temperature range.
2N7002K
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Minimum DS Breakdown Voltage: 60 V; JESD-30 Code: R-PDSO-G3;
BSS123
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 10 pF; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
FDC6305N
FDC6305N by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 2.7A, Max Power Dissipation of 0.96W, and Max Operating Temperature of 150°C. This small outline transistor has a rectangular package and operates in ENHANCEMENT MODE.
NX3008PBK,215
NX3008PBK,215 by NXP Semiconductors is a P-CHANNEL FET with max drain current of 0.23A and power dissipation of 0.42W. Ideal for applications requiring surface mount technology, it operates at up to 150°C making it suitable for various electronic devices.
2N7000
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: BOTTOM; Qualification: Not Qualified; Transistor Application: SWITCHING;
2N7002BKVL
2N7002BKVL by Nexperia is a N-CHANNEL FET with 60V DS Breakdown Voltage. It's used for SWITCHING applications in ENHANCEMENT MODE. Features include 0.35A Drain Current, 1.6 ohm On Resistance, and -55 to 150 °C Operating Temperature range.
BSS84
Good-ark Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .13 A; Package Shape: RECTANGULAR;
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
SI2323DS-T1-GE3
SI2323DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.7A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.039 ohm On Resistance. Suitable for surface mount, it has a max temperature of 150°C and features METAL-OXIDE SEMICONDUCTOR technology.
MMBF4117
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;
BSS138NH6433
Infineon Technologies
Infineon's BSS138NH6433 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A Drain Current, and 3.5 ohm On Resistance. Ideal for small signal applications in automotive electronics due to AEC-Q101 and IEC-61249-2-21 compliance.
MMBF170LT3
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel;
Tt Electronics Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Maximum Drain-Source On Resistance: 5 ohm; Qualification: Not Qualified;
BSS138G
Changzhou Galaxy Century Microelectronics
BSS138G by Changzhou Galaxy Century Microelectronics is a N-CHANNEL FET with 50V DS Breakdown Voltage. It's used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max Drain Current of 0.22A. The transistor features a PLASTIC/EPOXY package, GULL WING terminals, and can withstand temperatures from -55 to 150 °C.
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ZVP3310FTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G3; No. of Terminals: 3;
ZVP3310FTA by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. It has a 100V DS Breakdown Voltage, 0.33W Power Dissipation, and 20 ohm On Resistance. With ENHANCEMENT MODE operation, it can handle up to 0.075A Drain Current in a SMALL OUTLINE package.
ZVP3306FTA
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .09 A; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 14 ohm;
ZVP3306FTA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, 14 ohm RDS(on), and 8pF Crss. Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation and GULL WING terminals for surface mounting.
ZVP3310F
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; No. of Elements: 1; Transistor Element Material: SILICON;
ZVP3310FTC
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE; Terminal Finish: MATTE TIN;
ZVP3306A
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): .16 A;
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Package Body Material: PLASTIC/EPOXY; Maximum Feedback Capacitance (Crss): 8 pF;
ZVP3310A
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; No. of Terminals: 3; Minimum DS Breakdown Voltage: 100 V;
ZVP3306DWP
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 60 V; Qualification: Not Qualified;
ZVP3310ASMTA
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
ZVP3310ASMTC
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PSSO-G3; Minimum DS Breakdown Voltage: 100 V;
ZVP3310ASTOA
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Qualification: Not Qualified;
ZVP3306ASM
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: 14 ohm; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
ZVP3306F
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
ZVP3310ASTOB
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): .14 A;
ZVP3306ASMTA
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 14 ohm; Minimum DS Breakdown Voltage: 60 V;
ZVP3310ASTZ
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): .14 A; Minimum DS Breakdown Voltage: 100 V; Terminal Form: WIRE;
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