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ZVP3306ASTOA

Diodes Incorporated

ZVP3306ASTOA by Diodes Incorporated

ZVP3306ASTOA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, 0.16A ID, and 14 ohm RDS(ON). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, RECTANGULAR shape with WIRE terminals in IN-LINE style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 373 parts In-Stock

1+ parts

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373

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 373 parts In-Stock

1+ parts

$14.038

100+ parts

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1k+ parts

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373

$14.038

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Bastille Electronics

Australia . 500 parts In-Stock

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500

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Overview

Elevate your electronic projects with the ZVP3306ASTOA by Diodes Incorporated. As a trusted manufacturer in the industry, Diodes Incorporated delivers top-notch quality and reliability. This P-CHANNEL Small Signal Field Effect Transistor is perfect for switching applications, offering a minimum DS breakdown voltage of 60V and a maximum drain current of 0.16A. With its enhancement mode operation and low on-resistance, this FET provides exceptional performance and efficiency. Upgrade your designs today with the ZVP3306ASTOA and experience the superior value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are suitable for applications where negative voltage is required, offering versatility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use in various applications.

Transistor Application: SWITCHING

Designed for switching applications, making it ideal for controlling power and signals in electronic circuits.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages, providing reliability in different operating conditions.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on circuit boards, optimizing space and layout.

Terminal Form: WIRE

Wire terminals provide a secure connection and ease of soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer easier control and higher efficiency in switching applications.

No. of Terminals: 3

Having 3 terminals allows for proper connections in the circuit, ensuring accurate functionality.

Package Style (Meter): IN-LINE

In-line package style is convenient for mounting and connecting the transistor in circuits with limited space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology provides high switching speeds and low power consumption, making it ideal for various applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, suitable for a wide range of operating conditions.

Terminal Finish: Matte Tin (Sn)

Matte tin finish ensures good conductivity and corrosion resistance, enhancing the overall reliability of the transistor.

Maximum Drain Current (ID): 0.16 A

With a maximum drain current of 0.16 A, this transistor can handle moderate power requirements in the circuit.

Maximum Drain-Source On Resistance: 14 ohm

Low on-resistance ensures efficient power handling and minimal voltage drop across the transistor.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, making it user-friendly for circuit designers.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP3306ASTOA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.16 A

Maximum Drain-Source On Resistance:

14 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVP3306ASTOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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