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ZVN4206ASTOA

Zetex Plc

ZVN4206ASTOA by Zetex Plc

Zetex Plc's ZVN4206ASTOA is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. Featuring SINGLE configuration, it has 0.6A ID and 1.5 ohm RDS(on), operating in ENHANCEMENT MODE at up to 200°C. Package style: IN-LINE, terminal finish: MATTE TIN, making it suitable for various electronic designs.

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Overview

Upgrade your electronics with the ZVN4206ASTOA by Zetex Plc, a top-of-the-line Small Signal Field Effect Transistor. Engineered with precision and reliability in mind, this N-CHANNEL transistor is perfect for a variety of applications such as switching circuits. With a high DS Breakdown Voltage of 60V and a low Drain-Source On Resistance of 1.5 ohm, this transistor provides superior performance and efficiency. Trust Zetex Plc to deliver quality products that enhance your projects and exceed your expectations. Experience the benefits of the ZVN4206ASTOA and take your electronics to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON resistance and higher transconductance, making them efficient for switching applications.

Configuration: SINGLE

Single FET configuration simplifies circuit design and makes installation easier.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage of 60V, this transistor can handle high voltage applications safely.

Maximum Drain Current (ID): 0.6 A

Capable of handling a maximum drain current of 0.6A, suitable for low power applications.

Maximum Drain-Source On Resistance: 1.5 ohm

Low on-resistance of 1.5 ohms ensures minimal power loss and high efficiency.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN4206ASTOA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Zetex Plc

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.6 A

Maximum Drain-Source On Resistance:

1.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVN4206ASTOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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