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ZVN4310A

Diodes Incorporated

ZVN4310A by Diodes Incorporated

ZVN4310A by Diodes Inc. is a N-CHANNEL FET with 100V DS Breakdown Voltage and 0.9A Drain Current. It operates in ENHANCEMENT MODE, suitable for small signal applications requiring low on-resistance and high feedback capacitance. Package style is CYLINDRICAL with SILICON transistor element material, ideal for temperature-sensitive environments.

Median Price

$1.550

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 2 parts In-Stock

1+ parts

$1.550

100+ parts

$0.905

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-

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2

$1.550

$0.905

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Mouser Electronics

USA . 2,146 parts In-Stock

1+ parts

$2.130

100+ parts

$0.928

1k+ parts

$0.693

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-

2,146

$2.130

$0.928

$0.693

-

DigiKey

USA . 3,725 parts In-Stock

1+ parts

$2.610

100+ parts

$1.144

1k+ parts

$0.843

10k+ parts

$0.688

3,725

$2.610

$1.144

$0.843

$0.688

Verical

USA . 24,000 parts In-Stock

1+ parts

-

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$0.670

24,000

-

-

-

$0.670

Arrow

USA . 968 parts In-Stock

1+ parts

-

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$0.522

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968

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$0.522

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.756

100+ parts

-

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100

$0.756

-

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Component Electronics Inc.

Canada . 3 parts In-Stock

1+ parts

$1.540

100+ parts

$1.150

1k+ parts

$1.000

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3

$1.540

$1.150

$1.000

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IBS Electronics

USA . 39,985 parts In-Stock

1+ parts

-

100+ parts

$0.933

1k+ parts

$0.905

10k+ parts

$1.031

39,985

-

$0.933

$0.905

$1.031

NAC Semi

USA . 24,000 parts In-Stock

1+ parts

-

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$0.808

24,000

-

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-

$0.808

Chip Stock

USA . 8,722 parts In-Stock

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8,722

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Vyrian

USA . 5,228 parts In-Stock

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5,228

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Connector Distribution Corp

USA . 205 parts In-Stock

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205

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Right Parts Inc.

USA . 205 parts In-Stock

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205

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ComSIT Distribution GmbH

Germany . 98 parts In-Stock

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98

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Prism Electronics

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 5,334 parts In-Stock

1+ parts

$0.510

100+ parts

$0.497

1k+ parts

$0.495

10k+ parts

-

5,334

$0.510

$0.497

$0.495

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Argo Parts USA

USA . 3,348 parts In-Stock

1+ parts

$0.754

100+ parts

-

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3,348

$0.754

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Continental Prestige Electronics

USA . 1,580 parts In-Stock

1+ parts

$0.754

100+ parts

-

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$0.739

1,580

$0.754

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-

$0.739

Corohmni

South Africa . 19 parts In-Stock

1+ parts

$0.790

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19

$0.790

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Component Stockers USA

USA . 13,068 parts In-Stock

1+ parts

$1.500

100+ parts

$0.940

1k+ parts

$0.600

10k+ parts

-

13,068

$1.500

$0.940

$0.600

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Aztec Data Supply Inc.

USA . 3,505 parts In-Stock

1+ parts

$1.727

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3,505

$1.727

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Advanced Electronics

New Zealand . 650 parts In-Stock

1+ parts

$2.001

100+ parts

$1.821

1k+ parts

$1.641

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650

$2.001

$1.821

$1.641

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Microchip USA

USA . 9,236 parts In-Stock

1+ parts

$10.270

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9,236

$10.270

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Metaverse IC Inc.

Canada . 99,000 parts In-Stock

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Perfect Parts

USA . 32,529 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,566 parts In-Stock

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Kepictronics

USA . 4,256 parts In-Stock

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4,256

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Netroflash

USA . 500 parts In-Stock

1+ parts

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$0.740

1k+ parts

$0.718

10k+ parts

$0.703

500

-

$0.740

$0.718

$0.703

Overview

Enhance your electronics projects with the ZVN4310A from Diodes Incorporated. As a leader in the industry, Diodes Incorporated ensures top-quality products that meet the demands of various applications. The ZVN4310A is a small signal field effect transistor with N-channel polarity and a single configuration, making it versatile for a wide range of uses. With a high DS breakdown voltage and low drain-source on resistance, this enhancement mode transistor offers exceptional performance and reliability. Trust Diodes Incorporated to deliver excellent value and benefits with the ZVN4310A for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the FET, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics and are more commonly used in electronic circuits compared to P-channel FETs.

Minimum DS Breakdown Voltage: 100 V

With a minimum breakdown voltage of 100 V, this FET can handle high voltage applications with ease.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes integration into existing systems easier.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control and higher efficiency in switching applications compared to depletion mode FETs.

Maximum Drain Current (ID): 0.9 A

The high maximum drain current rating of 0.9 A allows the FET to handle higher power loads.

Maximum Drain-Source On Resistance: 0.5 ohm

With a low on-resistance of 0.5 ohm, this FET can minimize power losses and improve efficiency in the circuit.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor FETs are known for their high input impedance and low power consumption, making them ideal for various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliability and stability in high-temperature environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN4310A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

.9 A

Maximum Drain Current (ID):

.9 A

Maximum Drain-Source On Resistance:

.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

30 pF

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

ZVN4310A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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