Loading...

ZVN4310ASTZ

Diodes Incorporated

ZVN4310ASTZ by Diodes Incorporated

ZVN4310ASTZ by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, 0.9A max drain current, and 0.65 ohm max on resistance. Ideal for switching applications due to its single configuration and enhancement mode operation. Package style is in-line with matte tin finish terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Vyrian

USA . 298 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

298

-

-

-

-

Nova Conductors

Japan . 31 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

31

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 335 parts In-Stock

1+ parts

$0.867

100+ parts

-

1k+ parts

-

10k+ parts

-

335

$0.867

-

-

-

Aztec Data Supply Inc.

USA . 2,605 parts In-Stock

1+ parts

$1.531

100+ parts

-

1k+ parts

-

10k+ parts

-

2,605

$1.531

-

-

-

AZTECH Wire

Italy . 824 parts In-Stock

1+ parts

$10.078

100+ parts

-

1k+ parts

-

10k+ parts

-

824

$10.078

-

-

-

Semicontronic

India . 670 parts In-Stock

1+ parts

$40.050

100+ parts

$39.049

1k+ parts

$38.848

10k+ parts

-

670

$40.050

$39.049

$38.848

-

Component Stockers USA

USA . 319 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

319

$99.990

-

-

-

Perfect Parts

USA . 16,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,800

-

-

-

-

Continental Prestige Electronics

USA . 4,638 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,638

-

-

-

-

Argo Parts USA

USA . 3,438 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,438

-

-

-

-

Cyclops Electronics Ltd (Excess)

UK . 2,225 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,225

-

-

-

-

Glotronic Ltd.

UK . 180 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

180

-

-

-

-

Bastille Electronics

Australia . 40 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40

-

-

-

-

Overview

Discover the power of the ZVN4310ASTZ by Diodes Incorporated, a leading manufacturer in the field of Small Signal Field Effect Transistors (FET). This high-quality N-CHANNEL transistor offers unmatched reliability and performance in switching applications. With a minimum DS Breakdown Voltage of 100V and a maximum Drain Current of 0.9A, this transistor is perfect for enhancing your electronic projects. Trust Diodes Incorporated to provide you with superior technology and innovation for all your semiconductor needs. Elevate your designs with the ZVN4310ASTZ and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow and low power consumption in the circuit.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to work with.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and low power consumption.

Minimum DS Breakdown Voltage: 100 V

Provides a high level of voltage protection, ensuring stable performance in high voltage circuits.

Package Shape: RECTANGULAR

Facilitates space-saving and efficient layout in circuit design.

Terminal Form: WIRE

Allows for easy soldering and reliable connection in the circuit.

Operating Mode: ENHANCEMENT MODE

Offers precise control over the transistor's conductivity, improving overall circuit performance.

No. of Terminals: 3

Simplifies circuit layout and integration, reducing chances of error in connections.

Package Style (Meter): IN-LINE

Facilitates easy installation and connection in linear circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high efficiency and reliability in signal amplification and switching applications.

Transistor Element Material: SILICON

Offers high performance and stability in various operating conditions.

Terminal Finish: Matte Tin (Sn)

Ensures reliable and corrosion-resistant terminal connections for long-term performance.

Maximum Drain Current (ID): 0.9 A

Allows for handling higher current loads in the circuit without overheating.

Maximum Drain-Source On Resistance: 0.65 ohm

Provides low resistance for efficient current flow and reduced power loss in the circuit.

Terminal Position: SINGLE

Simplifies circuit connections and reduces chances of errors in installation.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN4310ASTZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.9 A

Maximum Drain-Source On Resistance:

.65 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVN4310ASTZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20