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ZVN4525E6TA

Diodes Incorporated

ZVN4525E6TA by Diodes Incorporated

ZVN4525E6TA by Diodes Inc. is a N-CHANNEL FET with 250V DS breakdown voltage, 0.23A max drain current, and 8.5 ohm max on resistance. Ideal for switching applications in enhancement mode operation, this transistor has a small outline package with gull wing terminals and matte tin finish.

Median Price

$0.334

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 450 parts In-Stock

1+ parts

$0.402

100+ parts

$0.402

1k+ parts

$0.402

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-

450

$0.402

$0.402

$0.402

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Mouser Electronics

USA . 52 parts In-Stock

1+ parts

$1.890

100+ parts

$0.779

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-

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52

$1.890

$0.779

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Arrow

USA . 6,000 parts In-Stock

1+ parts

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$0.266

6,000

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$0.266

Verical

USA . 6,000 parts In-Stock

1+ parts

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$0.266

6,000

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$0.266

Distributors (In-Stock)

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.492

100+ parts

-

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550

$0.492

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NAC Semi

USA . 45,000 parts In-Stock

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45,000

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Vyrian

USA . 33,949 parts In-Stock

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33,949

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Chip Stock

USA . 22,746 parts In-Stock

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22,746

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IBS Electronics

USA . 6,000 parts In-Stock

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$0.338

6,000

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$0.338

Bristol Electronics

USA . 5,855 parts In-Stock

1+ parts

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5,855

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Atlantic Semiconductor

USA . 3,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 538 parts In-Stock

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538

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Velocity Electronics

USA . 35 parts In-Stock

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35

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SPM Sales

USA . 26 parts In-Stock

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26

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Sensible Micro Corp

USA . 22 parts In-Stock

1+ parts

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100+ parts

$0.380

1k+ parts

$0.351

10k+ parts

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22

-

$0.380

$0.351

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 37,379 parts In-Stock

1+ parts

$0.225

100+ parts

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37,379

$0.225

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.402

100+ parts

$0.402

1k+ parts

$0.402

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450

$0.402

$0.402

$0.402

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Aztec Data Supply Inc.

USA . 120 parts In-Stock

1+ parts

$0.405

100+ parts

-

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120

$0.405

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Continental Prestige Electronics

USA . 6,187 parts In-Stock

1+ parts

$0.469

100+ parts

-

1k+ parts

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10k+ parts

$0.460

6,187

$0.469

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-

$0.460

Argo Parts USA

USA . 3,757 parts In-Stock

1+ parts

$0.469

100+ parts

-

1k+ parts

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10k+ parts

$0.455

3,757

$0.469

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-

$0.455

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.492

100+ parts

$0.482

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-

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500

$0.492

$0.482

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Component Stockers USA

USA . 45,665 parts In-Stock

1+ parts

$0.780

100+ parts

$0.420

1k+ parts

$0.300

10k+ parts

$0.300

45,665

$0.780

$0.420

$0.300

$0.300

Benley Electronics

USA . 1 parts In-Stock

1+ parts

$2.000

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1

$2.000

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 66,540 parts In-Stock

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Perfect Parts

USA . 37,433 parts In-Stock

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37,433

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Robosynatics

Brazil . 25,997 parts In-Stock

1+ parts

-

100+ parts

$0.405

1k+ parts

$0.396

10k+ parts

$0.396

25,997

-

$0.405

$0.396

$0.396

Lucentia Tech

USA . 25,997 parts In-Stock

1+ parts

-

100+ parts

$0.405

1k+ parts

$0.396

10k+ parts

$0.396

25,997

-

$0.405

$0.396

$0.396

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Lixinc

USA . 16,849 parts In-Stock

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Eastek

USA . 15,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,534 parts In-Stock

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10,534

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iodParts Technologies Inc.

India . 6,281 parts In-Stock

1+ parts

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$0.515

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6,281

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$0.515

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GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

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3,000

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Legend Electronics Inc. (Excess)

USA . 400 parts In-Stock

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400

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Speed Components Ltd (Excess)

Israel . 400 parts In-Stock

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400

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Overview

Discover the power of the ZVN4525E6TA by Diodes Incorporated. Crafted with precision and expertise, this small signal field effect transistor offers unparalleled performance and reliability in switching applications. With a maximum power dissipation of 1.1 W and a minimum DS breakdown voltage of 250 V, this N-channel transistor provides high-quality solutions for your electronic needs. Trust in the innovation and trust in the value that Diodes Incorporated brings to every product, making the ZVN4525E6TA the perfect choice for your next project. Elevate your designs with the best in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the FET, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient switching capabilities and low on-resistance for better performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and enhances functionality with the built-in diode.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliability and efficiency.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and facilitating automated assembly.

Minimum DS Breakdown Voltage: 250 V

Provides high voltage tolerance, making it suitable for use in diverse high-power applications.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering on the PCB, enhancing versatility and convenience.

Terminal Form: GULL WING

Enables secure soldering connections and efficient heat dissipation for improved reliability.

Operating Mode: ENHANCEMENT MODE

Enhances control over the FET's operation and improves efficiency in various applications.

Maximum Drain Current (Abs) (ID): 0.23 A

Offers high current-carrying capacity for reliable performance in demanding conditions.

No. of Terminals: 6

Provides multiple connection points for versatile circuit configurations and applications.

Maximum Power Dissipation (Abs): 1.1 W

Can handle moderate power levels without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Compact size allows for space-saving PCB layouts and integration in small electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes advanced semiconductor technology for optimized performance and efficiency.

Maximum Operating Temperature: 150 °C

Can operate effectively in a wide range of temperature environments for increased versatility.

Transistor Element Material: SILICON

Silicon-based construction ensures stability, reliability, and consistent performance.

Terminal Finish: MATTE TIN

Provides a durable and low-resistance surface for secure soldering connections.

Maximum Drain-Source On Resistance: 8.5 ohm

Low on-resistance minimizes power loss and heat generation for efficient operation.

Terminal Position: DUAL

Dual terminals offer flexibility in connecting the FET in different circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for accurate and efficient soldering during assembly without damaging the FET.

Peak Reflow Temperature °C: 260

High reflow temperature ensures a reliable and secure solder joint for long-term performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN4525E6TA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (Abs) (ID):

.23 A

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

8.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVN4525E6TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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