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ZVN4424A

Diodes Incorporated

ZVN4424A by Diodes Incorporated

ZVN4424A by Diodes Inc. is a N-CHANNEL FET with 240V DS breakdown voltage, 0.26A max drain current, and 5.5 ohm max drain-source resistance. It is commonly used for switching applications in electronic circuits.

Median Price

$1.705

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 3,821 parts In-Stock

1+ parts

$1.420

100+ parts

$0.605

1k+ parts

$0.436

10k+ parts

$0.407

3,821

$1.420

$0.605

$0.436

$0.407

Mouser Electronics

USA . 7,667 parts In-Stock

1+ parts

$1.990

100+ parts

$0.853

1k+ parts

$0.676

10k+ parts

-

7,667

$1.990

$0.853

$0.676

-

DigiKey

USA . 7,232 parts In-Stock

1+ parts

$1.990

100+ parts

$0.853

1k+ parts

$0.618

10k+ parts

$0.496

7,232

$1.990

$0.853

$0.618

$0.496

Element14

Singapore . 3,721 parts In-Stock

1+ parts

$2.400

100+ parts

$1.020

1k+ parts

$0.866

10k+ parts

-

3,721

$2.400

$1.020

$0.866

-

Arrow

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.468

4,000

-

-

-

$0.468

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.470

4,000

-

-

-

$0.470

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.641

100+ parts

-

1k+ parts

-

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10

$0.641

-

-

-

TME

Poland . 1,980 parts In-Stock

1+ parts

$1.790

100+ parts

$0.787

1k+ parts

$0.614

10k+ parts

-

1,980

$1.790

$0.787

$0.614

-

Vyrian

USA . 8,246 parts In-Stock

1+ parts

-

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-

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8,246

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Chip Stock

USA . 5,495 parts In-Stock

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5,495

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ComSIT Distribution GmbH

Germany . 2,072 parts In-Stock

1+ parts

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2,072

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Rebound Electronics

UK . 152 parts In-Stock

1+ parts

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152

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Sensible Micro Corp

USA . 64 parts In-Stock

1+ parts

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64

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R&J Components

USA . 17 parts In-Stock

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17

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LittleDiode

UK . 4 parts In-Stock

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 9,469 parts In-Stock

1+ parts

$0.358

100+ parts

$0.349

1k+ parts

$0.347

10k+ parts

-

9,469

$0.358

$0.349

$0.347

-

Argo Parts USA

USA . 1,895 parts In-Stock

1+ parts

$0.577

100+ parts

-

1k+ parts

-

10k+ parts

$0.560

1,895

$0.577

-

-

$0.560

Continental Prestige Electronics

USA . 1,684 parts In-Stock

1+ parts

$0.577

100+ parts

-

1k+ parts

-

10k+ parts

$0.565

1,684

$0.577

-

-

$0.565

Corohmni

South Africa . 305 parts In-Stock

1+ parts

$0.594

100+ parts

-

1k+ parts

-

10k+ parts

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305

$0.594

-

-

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Ampacity Inc.

Singapore . 8,367 parts In-Stock

1+ parts

$0.740

100+ parts

-

1k+ parts

-

10k+ parts

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8,367

$0.740

-

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Aztec Data Supply Inc.

USA . 1,002 parts In-Stock

1+ parts

$1.782

100+ parts

-

1k+ parts

-

10k+ parts

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1,002

$1.782

-

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Microchip USA

USA . 7,203 parts In-Stock

1+ parts

$7.215

100+ parts

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7,203

$7.215

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Perfect Parts

USA . 28,280 parts In-Stock

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28,280

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Robosynatics

Brazil . 4,902 parts In-Stock

1+ parts

-

100+ parts

$0.765

1k+ parts

$0.750

10k+ parts

$0.750

4,902

-

$0.765

$0.750

$0.750

Lucentia Tech

USA . 4,902 parts In-Stock

1+ parts

-

100+ parts

$0.765

1k+ parts

$0.750

10k+ parts

$0.750

4,902

-

$0.765

$0.750

$0.750

Kepictronics

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.628

1k+ parts

$0.609

10k+ parts

$0.596

500

-

$0.628

$0.609

$0.596

Infinite Electronics LLP (Excess)

. 143 parts In-Stock

1+ parts

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100+ parts

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143

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Overview

Discover the power and precision of the ZVN4424A by Diodes Incorporated. As a leader in small signal field effect transistors, Diodes Incorporated brings you a high-quality product with exceptional performance. The ZVN4424A is perfect for switching applications, providing reliable and efficient operation. With its N-channel configuration and enhancement mode, this transistor offers versatility and ease of use. Its compact rectangular package body and wire terminals make installation a breeze. Experience the benefits of this remarkable transistor, including a minimum DS breakdown voltage of 240 V and a maximum drain current of 0.26 A. Trust Diodes Incorporated for superior technology and reliability.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY. This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type:

N-CHANNEL. The N-channel configuration allows for efficient switching of the transistor, enhancing its performance in switching applications.

Configuration:

SINGLE. The single configuration simplifies the transistor's design and makes it easy to incorporate into circuit layouts.

Transistor Application:

SWITCHING. Specifically designed for switching applications, this transistor ensures fast and reliable switching performance.

Minimum DS Breakdown Voltage:

240 V. With a high breakdown voltage, this transistor can handle high voltage loads, ensuring stable operation in demanding conditions.

Package Shape:

RECTANGULAR. The rectangular shape enables easy integration into circuits and facilitates efficient use of board space.

Terminal Form:

WIRE. The wire terminal form allows for convenient soldering and connection, making it user-friendly for assembly.

Operating Mode:

ENHANCEMENT MODE. The enhancement mode operation ensures low power consumption and efficient use of the transistor in various applications.

No. of Elements:

1. Having a single element simplifies circuit design and improves overall reliability.

Maximum Drain Current (Abs) (ID):

0.26 A. The high maximum drain current capability allows the transistor to handle higher current loads, expanding its range of potential applications.

No. of Terminals:

3. With three terminals, this transistor offers flexible connections and compatibility with a wide range of circuit designs.

Package Style (Meter):

IN-LINE. The in-line package style provides a compact form factor, suitable for space-constrained applications.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR. This advanced technology ensures excellent electrical characteristics, high reliability, and low power consumption.

Maximum Operating Temperature:

150 °C. The high maximum operating temperature allows this transistor to withstand elevated temperatures, ensuring reliable operation in demanding environments.

Transistor Element Material:

SILICON. Silicon, as the transistor element material, offers superior electrical and thermal properties, enhancing performance and durability.

Terminal Finish:

MATTE TIN. The matte tin terminal finish ensures good solderability, facilitating efficient and reliable solder connections during assembly.

Maximum Drain-Source On Resistance:

5.5 ohm. With a low drain-source on resistance, this transistor minimizes power loss and improves overall efficiency.

Terminal Position:

SINGLE. The single terminal position simplifies circuit layout and ensures consistent electrical connections.

Peak Reflow Temperature °C:

260. The high peak reflow temperature allows for reliable soldering during assembly, ensuring strong and durable connections.

Maximum Feedback Capacitance (Crss):

15 pF. The low maximum feedback capacitance reduces the risk of signal degradation and improves the transistor's switching performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN4424A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

LOW THRESHOLD

Configuration:

Minimum DS Breakdown Voltage:

240 V

Maximum Drain Current (Abs) (ID):

.26 A

Maximum Drain Current (ID):

.26 A

Maximum Drain-Source On Resistance:

5.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVN4424A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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