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ZVN4310ASTOA

Diodes Incorporated

ZVN4310ASTOA by Diodes Incorporated

ZVN4310ASTOA by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, 0.9A ID, and 0.65 ohm RDS(on). Ideal for switching applications due to its single configuration and enhancement mode operation. Features matte tin finish, 3 terminals in an in-line package shape.

Median Price

-

Lifecycle Status

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2

In-Stock Inventory

< 1k

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Vyrian

USA . 897 parts In-Stock

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897

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Nova Conductors

Japan . 73 parts In-Stock

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Corohmni

South Africa . 432 parts In-Stock

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$1.374

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432

$1.374

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Aztec Data Supply Inc.

USA . 3,280 parts In-Stock

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$1.894

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$1.894

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AZTECH Wire

Italy . 473 parts In-Stock

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$9.141

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Semicontronic

India . 631 parts In-Stock

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$14.050

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$13.699

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$13.628

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631

$14.050

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$13.628

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Continental Prestige Electronics

USA . 5,570 parts In-Stock

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Argo Parts USA

USA . 764 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Experience the next level of performance with the ZVN4310ASTOA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Small Signal Field Effect Transistors that are perfect for a wide range of applications. With its N-channel configuration and high voltage breakdown, this transistor is ideal for switching operations. Its sleek design and advanced technology make it a valuable asset for any project. Trust Diodes Incorporated to provide you with reliable and efficient solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and faster switching speeds, making them ideal for applications requiring quick response times.

Minimum DS Breakdown Voltage: 100 V

High breakdown voltage ensures the transistor can handle higher voltages, adding to its reliability and versatility in various circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high input impedance, low noise, and high gain, making the transistor well-suited for signal amplification and processing applications.

Maximum Drain Current (ID): 0.9 A

A high maximum drain current rating allows the transistor to handle larger currents, giving it the capability to drive more demanding loads.

Maximum Drain-Source On Resistance: 0.65 ohm

Low drain-source on resistance helps minimize power dissipation and improve efficiency in switch mode applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN4310ASTOA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.9 A

Maximum Drain-Source On Resistance:

.65 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVN4310ASTOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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