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ZVN4525E6

Zetex Plc

ZVN4525E6 by Zetex Plc

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Terminal Position: DUAL; Maximum Drain-Source On Resistance: 8.5 ohm;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

QIE Inc.

USA . 56 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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56

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Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN4525E6 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Zetex Plc

Specs

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

8.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVN4525E6 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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