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SFH320FA-3

Infineon Technologies

SFH320FA-3 by Infineon Technologies

SFH320FA-3 by Infineon Technologies is a 2.4mm single phototransistor with peak wavelength of 900nm. It operates b/w -40 to 100°C, has a response time of 0.000007s, and can handle max on state current of 0.015A. Ideal for IR applications due to its infrared range capability and surface mounting feature.

Median Price

$0.253

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 13,285 parts In-Stock

1+ parts

$0.670

100+ parts

$0.336

1k+ parts

$0.261

10k+ parts

$0.216

13,285

$0.670

$0.336

$0.261

$0.216

Arrow

USA . 14,000 parts In-Stock

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$0.253

14,000

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$0.253

Verical

USA . 12,000 parts In-Stock

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$0.232

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$0.232

Distributors (In-Stock)

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Vyrian

USA . 890 parts In-Stock

1+ parts

$0.188

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890

$0.188

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Digiode

USA . 490 parts In-Stock

1+ parts

$0.788

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490

$0.788

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Rutronik

Germany . 18,000 parts In-Stock

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$0.231

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$0.231

ComSIT Distribution GmbH

Germany . 5,040 parts In-Stock

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Classic Components Corporation

USA . 1,932 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,400 parts In-Stock

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Pegasus Components GmbH

Germany . 1,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 940 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 3,499 parts In-Stock

1+ parts

$0.566

100+ parts

$0.543

1k+ parts

$0.521

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3,499

$0.566

$0.543

$0.521

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Corphita

USA . 680 parts In-Stock

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$0.747

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680

$0.747

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Glotronic Ltd.

UK . 25,600 parts In-Stock

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Perfect Parts

USA . 23,651 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kepictronics

USA . 8,000 parts In-Stock

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Metaverse IC Inc.

Canada . 4,000 parts In-Stock

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Overview

Discover the SFH320FA-3 by Infineon Technologies, a top-quality phototransistor that offers unmatched performance and reliability. With a peak wavelength of 900nm and a fast response time of 0.000007s, this product is perfect for applications requiring precise light detection. Infineon Technologies, known for its cutting-edge technology, ensures that customers receive exceptional value and benefits with this phototransistor. Whether it's in industrial automation, consumer electronics, or automotive systems, the SFH320FA-3 provides the accuracy and efficiency needed to take your products to the next level. Experience the difference with Infineon Technologies today.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies installation and wiring, making this phototransistor easy to use in various applications.

Size: 2.4 mm

Compact size allows for easy integration into small or tight spaces, making this phototransistor versatile for a range of applications.

Peak Wavelength (nm): 900

Operates at a peak wavelength of 900nm, making it suitable for applications requiring detection in the infrared spectrum.

Optoelectronic Type: PHOTO TRANSISTOR

Photo transistor type offers high sensitivity to light, allowing for accurate light detection in various environments.

Maximum Operating Temperature: 100 °C

High maximum operating temperature ensures reliability and stability even in harsh temperature conditions.

Shape: ROUND

Round shape enables easy alignment and mounting, providing consistent performance in applications requiring precise light detection.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality in cold environments, making this phototransistor suitable for a wide range of temperature conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and reliability, making this phototransistor durable for long-term use.

Maximum Power Dissipation: 0.165 W

High maximum power dissipation capability allows for efficient operation and reliability under varying load conditions.

Nominal Light Current: 0.65 mA

High nominal light current enables accurate light detection, ensuring precision in various light sensing applications.

Maximum Dark Current: 200 nA

Low maximum dark current reduces noise and improves signal-to-noise ratio, making this phototransistor ideal for low-light environments.

Infrared (IR) Range: YES

Infrared range capability allows for detection of infrared light, expanding the range of applications where this phototransistor can be used.

Maximum Response Time: 0.000007 s

Ultra-fast maximum response time ensures quick detection and response to changes in light levels, making this phototransistor ideal for high-speed applications.

Minimum Collector-emitter Breakdown Voltage: 35 V

High minimum collector-emitter breakdown voltage provides protection against voltage spikes, ensuring reliability in various operating conditions.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies installation and allows for easy integration into circuit boards, making this phototransistor suitable for automated assembly processes.

Maximum On State Current: 0.015 A

High maximum on-state current allows for efficient switching and control of current flow, making this phototransistor suitable for power control applications.

Technical Specifications

Phototransistors SFH320FA-3 attributes and parameters. Explore more Phototransistors devices from Infineon Technologies

Specs

Minimum Collector-emitter Breakdown Voltage:

35 V

Configuration:

SINGLE

Maximum Dark Current:

200 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e0

Nominal Light Current:

.65 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.015 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.165 W

Maximum Response Time:

.000007 s

Shape:

ROUND

Size:

2.4 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Trade Compliance

SFH320FA-3 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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