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TIL606

Texas Instruments

TIL606 by Texas Instruments

TIL606 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With fast response time of 8ns, it's ideal for surface mount applications requiring precise light detection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,839 parts In-Stock

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Digiode

USA . 831 parts In-Stock

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831

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Semicontronic

India . 1,229 parts In-Stock

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$0.100

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$0.098

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$0.097

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1,229

$0.100

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$0.097

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Parana Technologies

USA . 56 parts In-Stock

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$0.619

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$1.691

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56

$0.619

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$1.691

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DigiPath Technology Company

USA . 1,304 parts In-Stock

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$0.681

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$0.627

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$0.681

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ChromeModa Solutions

Germany . 4,157 parts In-Stock

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$0.695

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$0.570

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$0.695

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IDEA Electronic Components Group

UK . 2,232 parts In-Stock

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$0.695

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$0.626

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2,232

$0.695

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Ampacity Inc.

Singapore . 1,540 parts In-Stock

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$1.100

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$1.100

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One Stop Electronics

USA . 1,318 parts In-Stock

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$2.100

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AZTECH Wire

Italy . 392 parts In-Stock

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$16.980

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Corphita

USA . 3,710 parts In-Stock

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Corohmni

South Africa . 320 parts In-Stock

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Overview

Unlock a world of possibilities with the TIL606 phototransistor by Texas Instruments. Engineered with precision and quality, this innovative device boasts peak performance at a wavelength of 900nm. From industrial automation to consumer electronics, the TIL606 offers unmatched reliability and efficiency for your application needs. Trust in Texas Instruments to deliver superior products that enhance your projects and bring value to your business. Elevate your designs with the TIL606 phototransistor today.

Feature Benefit Bullets

Peak Wavelength: 900 nm

This specific peak wavelength makes this phototransistor ideal for applications requiring sensitivity to light in the near-infrared spectrum.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this phototransistor can be utilized in environments where temperatures can reach up to 125°C without impacting performance.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C allows this phototransistor to be used in extreme cold conditions without any issues of failure or damage.

Maximum Power Dissipation: 0.05 W

The low power dissipation of 0.05W ensures that the phototransistor operates efficiently without generating excess heat or consuming too much power.

Maximum Dark Current: 25 nA

The low dark current of 25nA contributes to the high sensitivity of this phototransistor, making it suitable for applications where detecting very small levels of light is crucial.

Maximum Response Time: 0.000008 s

With an extremely fast response time of 0.000008 seconds, this phototransistor can quickly react to changes in light intensity, making it ideal for high-speed applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure placement of the phototransistor on circuit boards, simplifying the manufacturing process and ensuring reliable connections.

Technical Specifications

Phototransistors TIL606 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

25 nA

Mounting Feature:

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Sub-Category:

Photo Transistors

Trade Compliance

TIL606 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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