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TIL610

Texas Instruments

TIL610 by Texas Instruments

TIL610 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for through hole mounting in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,318 parts In-Stock

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2,318

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Vyrian

USA . 1,902 parts In-Stock

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1,902

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Fibra_Brandt Electronic GMBH

Germany . 187 parts In-Stock

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187

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,891 parts In-Stock

1+ parts

$0.550

100+ parts

-

1k+ parts

$1.653

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1,891

$0.550

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$1.653

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DigiPath Technology Company

USA . 954 parts In-Stock

1+ parts

$0.606

100+ parts

$0.557

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954

$0.606

$0.557

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ChromeModa Solutions

Germany . 3,217 parts In-Stock

1+ parts

$0.618

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$0.507

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3,217

$0.618

$0.507

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IDEA Electronic Components Group

UK . 2,298 parts In-Stock

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$0.618

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$0.556

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2,298

$0.618

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$0.556

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One Stop Electronics

USA . 969 parts In-Stock

1+ parts

$5.100

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969

$5.100

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AZTECH Wire

Italy . 331 parts In-Stock

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$9.252

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331

$9.252

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Corphita

USA . 2,516 parts In-Stock

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2,516

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Overview

Unleash the power of innovation with the Texas Instruments TIL610 Phototransistor. Crafted with precision by trusted manufacturer Texas Instruments, this phototransistor offers unparalleled quality and reliability. Ideal for a wide range of applications, the TIL610 delivers exceptional performance in industries such as automotive, industrial automation, and consumer electronics. Experience the value and benefits of this cutting-edge technology, providing customers with superior functionality and efficiency. Upgrade your projects with the TIL610 and discover the advantages it brings to your designs.

Feature Benefit Bullets

Peak Wavelength (nm): 900

The peak wavelength of 900 nm allows for precise detection of infrared light, making this phototransistor suitable for applications requiring this specific wavelength range.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this phototransistor is capable of withstanding elevated temperatures, ensuring reliable performance in various environments.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C enables this phototransistor to operate effectively in cold environments without compromising its functionality.

Maximum Power Dissipation: 0.05 W

The low maximum power dissipation of 0.05 W indicates that this phototransistor is energy-efficient and can help save power during operation.

Maximum Dark Current: 25 nA

The low maximum dark current of 25 nA results in minimal noise and enhances the sensitivity of this phototransistor, making it ideal for applications requiring precise light detection.

Maximum Response Time: 0.000008 s

The fast maximum response time of 0.000008 seconds allows for quick detection and response to changes in light intensity, making this phototransistor suitable for high-speed applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation and integration of this phototransistor into electronic circuits, providing ease of use and versatility in various applications.

Technical Specifications

Phototransistors TIL610 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

25 nA

Mounting Feature:

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Sub-Category:

Photo Transistors

Trade Compliance

TIL610 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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