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TIL604

Texas Instruments

TIL604 by Texas Instruments

TIL604 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 50V. Ideal for applications requiring infrared detection in through hole mounting configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,162 parts In-Stock

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Digiode

USA . 512 parts In-Stock

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One Stop Electronics

USA . 154 parts In-Stock

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$0.100

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Parana Technologies

USA . 290 parts In-Stock

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$0.382

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$1.578

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DigiPath Technology Company

USA . 1,389 parts In-Stock

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$0.420

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$0.387

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ChromeModa Solutions

Germany . 6,661 parts In-Stock

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$0.429

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$0.352

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IDEA Electronic Components Group

UK . 893 parts In-Stock

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$0.429

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$0.386

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Semicontronic

India . 432 parts In-Stock

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$3.100

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$3.022

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$3.007

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AZTECH Wire

Italy . 796 parts In-Stock

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Corohmni

South Africa . 357 parts In-Stock

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Corphita

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Overview

Unlock the power of light sensing technology with the TIL604 by Texas Instruments. Backed by a trusted manufacturer, this phototransistor offers exceptional quality and reliability. From monitoring ambient light levels to detecting motion, the TIL604 is versatile and reliable in a variety of applications. Experience the value and benefits of precise light detection with the TIL604, providing customers with unmatched accuracy and performance. Choose Texas Instruments for cutting-edge optoelectronic solutions that deliver results.

Feature Benefit Bullets

Peak Wavelength (nm): 900

The peak wavelength of 900nm indicates that this phototransistor is optimized for sensing light in the near-infrared range, making it suitable for applications requiring detection or communication using IR light.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this phototransistor can withstand high temperature environments, providing reliability and stability in various applications.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C allows this phototransistor to function effectively even in cold environments, making it versatile for use in a wide range of conditions.

Maximum Response Time: 0.000008 s

The fast maximum response time of 0.000008 seconds ensures quick detection and response to changes in light levels, making this phototransistor ideal for applications requiring rapid sensing capabilities.

Nominal Light Current: 7 mA

The high nominal light current of 7mA indicates that this phototransistor is sensitive to light, enabling accurate detection and measurement of light intensity in various applications.

Infrared (IR) Range: YES

The inclusion of an Infrared (IR) range feature makes this phototransistor suitable for applications requiring detection or communication using IR light, providing versatility and compatibility with IR-based systems.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation and integration of this phototransistor into electronic circuits or PCBs, offering ease of use and convenience during assembly.

Technical Specifications

Phototransistors TIL604 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

7 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

TIL604 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5961-00-487-8852, 5961004878852, 5961-01-003-2927, 5961010032927

NIIN

004878852, 010032927

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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