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TIL616

Texas Instruments

TIL616 by Texas Instruments

TIL616 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It has max operating temp of 125°C and min temp of -60°C. With response time of 0.000008s, it's ideal for applications requiring precise light detection in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,772 parts In-Stock

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Digiode

USA . 2,033 parts In-Stock

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2,033

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Parana Technologies

USA . 1,834 parts In-Stock

1+ parts

$0.247

100+ parts

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$1.526

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1,834

$0.247

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$1.526

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DigiPath Technology Company

USA . 1,964 parts In-Stock

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$0.272

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$0.251

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1,964

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ChromeModa Solutions

Germany . 5,047 parts In-Stock

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$0.278

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$0.228

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5,047

$0.278

$0.228

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IDEA Electronic Components Group

UK . 8 parts In-Stock

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$0.278

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$0.250

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8

$0.278

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$0.250

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One Stop Electronics

USA . 1,340 parts In-Stock

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$3.100

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$3.100

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Semicontronic

India . 1,016 parts In-Stock

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$7.100

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$6.922

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$6.887

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1,016

$7.100

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Ampacity Inc.

Singapore . 1,555 parts In-Stock

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$17.100

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$17.100

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AZTECH Wire

Italy . 374 parts In-Stock

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$17.999

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Corphita

USA . 1,464 parts In-Stock

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Corohmni

South Africa . 404 parts In-Stock

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Overview

Elevate your projects with the TIL616 phototransistor from Texas Instruments, renowned for its top-notch quality and reliability. This versatile component operates flawlessly in a wide range of temperatures, offering peak performance at 900nm wavelength. Perfect for applications requiring quick response times and low power consumption, this phototransistor is a must-have for designers looking to add value and efficiency to their creations. Trust Texas Instruments for excellence in innovation – experience the difference with the TIL616.

Feature Benefit Bullets

Peak Wavelength (nm) 900

The peak wavelength of 900nm makes this phototransistor suitable for applications where responsiveness to light in the near-infrared spectrum is required.

Maximum Operating Temperature 125 °C

With a maximum operating temperature of 125°C, this phototransistor can withstand higher temperatures, making it suitable for use in demanding environments.

Minimum Operating Temperature -60 °C

The minimum operating temperature of -60°C allows this phototransistor to function effectively even in extremely cold conditions, enhancing its versatility.

Maximum Power Dissipation 0.05 W

The low maximum power dissipation of 0.05W indicates that this phototransistor is energy-efficient and suitable for power-sensitive applications.

Maximum Dark Current 25 nA

The low maximum dark current of 25nA ensures minimal noise and high sensitivity in low light conditions, making this phototransistor ideal for light detection applications.

Maximum Response Time 0.000008 s

With a fast maximum response time of 0.000008 seconds, this phototransistor can quickly detect changes in light intensity, making it ideal for high-speed applications.

Mounting Feature THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides a secure and stable connection, making this phototransistor easy to integrate into various electronic systems.

Technical Specifications

Phototransistors TIL616 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

25 nA

Mounting Feature:

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Sub-Category:

Photo Transistors

Trade Compliance

TIL616 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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