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TIL605

Texas Instruments

TIL605 by Texas Instruments

TIL605 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With a response time of 0.000008s, it's ideal for surface mount applications requiring fast and precise light detection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,756 parts In-Stock

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Digiode

USA . 2,448 parts In-Stock

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2,448

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,618 parts In-Stock

1+ parts

$0.057

100+ parts

-

1k+ parts

$1.433

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1,618

$0.057

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$1.433

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ChromeModa Solutions

Germany . 2,199 parts In-Stock

1+ parts

$0.064

100+ parts

$0.052

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2,199

$0.064

$0.052

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IDEA Electronic Components Group

UK . 155 parts In-Stock

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$0.064

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$0.058

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155

$0.064

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$0.058

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Ampacity Inc.

Singapore . 1,049 parts In-Stock

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$0.100

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1,049

$0.100

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One Stop Electronics

USA . 320 parts In-Stock

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$5.100

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320

$5.100

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Semicontronic

India . 146 parts In-Stock

1+ parts

$15.100

100+ parts

$14.722

1k+ parts

$14.647

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146

$15.100

$14.722

$14.647

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AZTECH Wire

Italy . 452 parts In-Stock

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$16.966

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452

$16.966

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Corphita

USA . 2,500 parts In-Stock

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2,500

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DigiPath Technology Company

USA . 1,973 parts In-Stock

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$0.058

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1,973

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$0.058

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Corohmni

South Africa . 128 parts In-Stock

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Overview

Unleash the power of precision with the TIL605 by Texas Instruments. Crafted by a renowned manufacturer, this phototransistor offers unparalleled quality and reliability for a wide range of applications. From detecting light levels in security systems to regulating brightness in displays, the TIL605 delivers exceptional performance in extreme temperatures and low power consumption. Elevate your projects with the superior sensitivity and rapid response time of the TIL605, setting new standards for efficiency and accuracy.

Feature Benefit Bullets

Peak Wavelength: 900 nm

This phototransistor is optimized for light detection at a specific wavelength, providing accurate and reliable results in applications requiring detection at 900 nm.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this phototransistor can withstand harsh environmental conditions, making it suitable for a wide range of industrial applications.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature ensures that this phototransistor can also perform well in cold environments, increasing its versatility for different applications.

Maximum Power Dissipation: 0.05 W

The low maximum power dissipation indicates that this phototransistor is energy efficient and generates minimal heat during operation, improving its reliability and lifespan.

Maximum Dark Current: 25 nA

With a low maximum dark current, this phototransistor provides accurate light detection by minimizing unwanted signal output in the absence of light.

Maximum Response Time: 0.000008 s

The fast response time of this phototransistor ensures quick and precise detection of light changes, making it ideal for applications requiring rapid response.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation of this phototransistor on various PCBs or surfaces, facilitating the integration into different devices and equipment.

Technical Specifications

Phototransistors TIL605 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

25 nA

Mounting Feature:

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Sub-Category:

Photo Transistors

Trade Compliance

TIL605 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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