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TIL603

Texas Instruments

TIL603 by Texas Instruments

TIL603 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection in through-hole mounting configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,759 parts In-Stock

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3,759

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Vyrian

USA . 2,965 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 21 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,013 parts In-Stock

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$0.613

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$1.689

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1,013

$0.613

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$1.689

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DigiPath Technology Company

USA . 1,890 parts In-Stock

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$0.675

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$0.621

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1,890

$0.675

$0.621

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ChromeModa Solutions

Germany . 5,202 parts In-Stock

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$0.689

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$0.565

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$0.689

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IDEA Electronic Components Group

UK . 224 parts In-Stock

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$0.689

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$0.620

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224

$0.689

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$0.620

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AZTECH Wire

Italy . 457 parts In-Stock

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$12.830

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457

$12.830

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One Stop Electronics

USA . 627 parts In-Stock

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$18.100

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Corphita

USA . 680 parts In-Stock

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680

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Overview

Elevate your projects with the TIL603 by Texas Instruments, a high-quality phototransistor designed for superior performance and reliability. With a peak wavelength of 900nm, this photo transistor excels in applications requiring precise light detection. From robotics to automation, the TIL603 offers unparalleled accuracy and sensitivity, ensuring optimal results every time. Trust in Texas Instruments' legacy of excellence and innovation, and experience the value of cutting-edge technology with the TIL603 phototransistor.

Feature Benefit Bullets

Configuration: SINGLE

Simplifies circuit design by requiring only one phototransistor component.

Peak Wavelength (nm): 900

Ideal for applications where 900nm wavelength is required, providing accurate detection and response.

Optoelectronic Type: PHOTO TRANSISTOR

Offers high sensitivity and reliability in converting light into electrical signals.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, suitable for various industrial applications.

Shape: ROUND

Provides uniform light sensitivity from all directions, enhancing performance in diverse lighting conditions.

Minimum Operating Temperature: -60 °C

Allows operation in extremely low temperatures, making it versatile for different environments.

Maximum Power Dissipation: 0.05 W

Efficient power management to prevent overheating and ensure long-term reliability.

Nominal Light Current: 4 mA

Generates sufficient current output under light conditions for accurate signal detection.

Maximum Dark Current: 25 nA

Low dark current minimizes noise interference for precise measurement in low light conditions.

Infrared (IR) Range: YES

Adds versatility for applications requiring infrared detection capabilities.

Maximum Response Time: 0.000008 s

Offers ultra-fast response time for real-time detection and rapid signal processing.

Minimum Collector-emitter Breakdown Voltage: 50 V

Provides reliable breakdown voltage protection to prevent damage during operation.

Mounting Feature: THROUGH HOLE MOUNT

Facilitates easy and secure installation onto circuit boards or mounting surfaces.

Technical Specifications

Phototransistors TIL603 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

4 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

TIL603 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5961-01-207-9573, 5961012079573

NIIN

012079573

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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