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SPS1118C

Onsemi

SPS1118C by Onsemi

The Onsemi SPS1118C is a phototransistor with peak wavelength of 880nm. It has a max operating temp of 75 °C and min temp of -20°C. With max power dissipation of 0.07W, it's ideal for THROUGH HOLE MOUNT applications requiring low dark current (<200nA).

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Vyrian

USA . 862 parts In-Stock

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Digiode

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Kepictronics

USA . 58,951 parts In-Stock

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Problanco Electronics

Mexico . 7,465 parts In-Stock

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Kulean Microsystems

USA . 5,813 parts In-Stock

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TANS Electronics

Latvia . 5,389 parts In-Stock

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Corphita

USA . 2,493 parts In-Stock

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SupplyDigital Components

Austria . 2,087 parts In-Stock

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UHIMA Technologies

Türkiye . 613 parts In-Stock

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Corohmni

South Africa . 99 parts In-Stock

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Overview

Unlock a world of possibilities with the SPS1118C by Onsemi. Crafted with precision and quality, this phototransistor is designed to exceed your expectations. From industrial automation to consumer electronics, this versatile component ensures optimal performance in a wide range of applications. Trust Onsemi's reputation for reliability and innovation, and experience the value and benefits that the SPS1118C brings to your projects. Elevate your creations with this exceptional phototransistor today.

Feature Benefit Bullets

Peak Wavelength (nm): 880

This specific wavelength makes this phototransistor suitable for applications that require detection and sensing in the near-infrared spectrum.

Maximum Operating Temperature: 75 °C

With a high maximum operating temperature, this phototransistor can withstand relatively high temperatures, making it suitable for a variety of environmental conditions.

Minimum Operating Temperature: -20 °C

The low minimum operating temperature allows this phototransistor to function effectively in colder environments without any performance issues.

Maximum Power Dissipation: 0.07 W

The low power dissipation of this phototransistor helps in reducing energy consumption and heat generation, making it energy-efficient and suitable for battery-powered applications.

Maximum Dark Current: 200 nA

With a low dark current, this phototransistor can accurately detect low light levels, leading to improved sensitivity and reliability in low-light conditions.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides ease of installation and secure positioning of the phototransistor on a PCB, ensuring stable and reliable operation.

Technical Specifications

Phototransistors SPS1118C attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Maximum Dark Current:

200 nA

Mounting Feature:

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

-20 Cel

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.07 W

Sub-Category:

Photo Transistors

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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