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SPS189C

Onsemi

SPS189C by Onsemi

The Onsemi SPS189C is a phototransistor with peak wavelength of 880nm, max temp of 75 °C, and max power dissipation of 0.07W. Ideal for applications requiring through hole mounting, it has a max on state current of 0.02A and low dark current at 200nA.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 819 parts In-Stock

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Digiode

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Problanco Electronics

Mexico . 5,653 parts In-Stock

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TANS Electronics

Latvia . 4,904 parts In-Stock

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Kulean Microsystems

USA . 3,659 parts In-Stock

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UHIMA Technologies

Türkiye . 557 parts In-Stock

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Corohmni

South Africa . 391 parts In-Stock

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SupplyDigital Components

Austria . 267 parts In-Stock

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Corphita

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Overview

Discover the innovative SPS189C phototransistor by Onsemi, designed to deliver superior performance and reliability. With a peak wavelength of 880nm, this component operates seamlessly in temperatures ranging from -20 °C to 75°C, making it ideal for a wide range of applications. From light sensors to optical communication systems, the SPS189C offers unparalleled value by providing high sensitivity and low dark current. Trust Onsemi's reputation for quality and choose the SPS189C for your next project.

Feature Benefit Bullets

Peak Wavelength (nm): 880

The peak wavelength of 880nm makes this phototransistor suitable for applications requiring detection of near-infrared light, providing accurate and reliable results.

Maximum Operating Temperature: 75 °C

With a maximum operating temperature of 75 °C, this phototransistor can withstand high temperatures, ensuring stable performance in various industrial environments.

Minimum Operating Temperature: -20 °C

The ability to operate at temperatures as low as -20 °C makes this phototransistor ideal for use in cold environments without compromising functionality.

Maximum Power Dissipation: 0.07 W

The low maximum power dissipation of 0.07W helps in reducing energy consumption and heat generation, making it an energy-efficient choice for electronic circuits.

Maximum Dark Current: 200 nA

With a maximum dark current of 200nA, this phototransistor ensures minimal current flows in the absence of light, leading to improved signal-to-noise ratio and accuracy in light detection.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides a secure and reliable connection to the circuit board, enhancing the overall durability and stability of the phototransistor.

Maximum On State Current: 0.02 A

With a maximum on-state current of 0.02A, this phototransistor delivers high sensitivity to light signals, enabling precise detection and measurement in various photoelectric applications.

Technical Specifications

Phototransistors SPS189C attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Maximum Dark Current:

200 nA

Mounting Feature:

Maximum On State Current:

.02 A

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

-20 Cel

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.07 W

Sub-Category:

Photo Transistors

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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