Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Onsemi SPS189C is a phototransistor with peak wavelength of 880nm, max temp of 75 °C, and max power dissipation of 0.07W. Ideal for applications requiring through hole mounting, it has a max on state current of 0.02A and low dark current at 200nA.
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The peak wavelength of 880nm makes this phototransistor suitable for applications requiring detection of near-infrared light, providing accurate and reliable results.
With a maximum operating temperature of 75 °C, this phototransistor can withstand high temperatures, ensuring stable performance in various industrial environments.
The ability to operate at temperatures as low as -20 °C makes this phototransistor ideal for use in cold environments without compromising functionality.
The low maximum power dissipation of 0.07W helps in reducing energy consumption and heat generation, making it an energy-efficient choice for electronic circuits.
With a maximum dark current of 200nA, this phototransistor ensures minimal current flows in the absence of light, leading to improved signal-to-noise ratio and accuracy in light detection.
The through-hole mounting feature simplifies the installation process and provides a secure and reliable connection to the circuit board, enhancing the overall durability and stability of the phototransistor.
With a maximum on-state current of 0.02A, this phototransistor delivers high sensitivity to light signals, enabling precise detection and measurement in various photoelectric applications.
Phototransistors SPS189C attributes and parameters. Explore more Phototransistors devices from Onsemi
Maximum Dark Current:
Mounting Feature:
Maximum On State Current:
Maximum Operating Temperature:
Minimum Operating Temperature:
Peak Wavelength (nm):
Maximum Power Dissipation:
Sub-Category:
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
USBLC6-2SC6
STMicroelectronics
USBLC6-2SC6 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 6V. It has a max clamping voltage of 17V and operates in temperatures ranging from -40 to 125°C. This device, with dual terminals and matte tin finish, is ideal for protecting sensitive electronics from voltage spikes in various applications.
STM8S003F3P6TR
STM8S003F3P6TR by STMicroelectronics is an 8-bit microcontroller with a max clock frequency of 16 MHz. It features 1024 RAM bytes, 128 data EEPROM size, and 5-ch 10-bit ADC channels. Ideal for industrial applications requiring low power mode and connectivity via I2C, SPI, and UART interfaces.
2N7002-T1-E3
Vishay Intertechnology
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
STM32H743ZIT6
STM32H743ZIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications, offering features such as 21 timers, CAN and USB connectivity, and low power mode.
MMBT2222ALT1G
Onsemi
MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
ABS10-32.768KHZ-T
Abracon
Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.
1554216004
Molex
WIRE AND CABLE;
LL4148
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
1N4148
Laube Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
FDN5618P
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
BAV99
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
DS18B20Z
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Esterline Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Option-1: HOLE .115-.125; Mounting Type: CABLE AND PANEL; Mating Contact Finish: NOT SPECIFIED;
TPS601A
Toshiba
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 4.7 mm; Infrared (IR) Range: YES; Maximum Dark Current: 200 nA; Minimum Collector-emitter Breakdown Voltage: 40 V;
SFH325-2
Infineon Technologies
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000006 s; Peak Wavelength (nm): 860; Maximum Power Dissipation: .165 W; Minimum Operating Temperature: -55 Cel;
QSE114
Qt Optoelectronics
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Size: .062 mm; Maximum Power Dissipation: .1 W;
SFH309FA-4/5
Osram Opto Semiconductors
Osram Opto Semiconductors SFH309FA-4/5 is a single phototransistor with peak wavelength of 900nm. It operates b/w -40 to 100°C, has a max power dissipation of 0.165W, and min collector-emitter breakdown voltage of 35V. Ideal for applications requiring infrared detection and light current up to 1mA.
TPS616(BC,F)
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.1 mm; Peak Wavelength (nm): 900; Maximum Power Dissipation: .075 W; Configuration: SINGLE;
TPS606(LB)-B
PHOTO TRANSISTOR; Configuration: SINGLE; Shape: ROUND; Nominal Light Current: .01 mA; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 20 V;
KDT00030TR
Fairchild Semiconductor
KDT00030TR by Fairchild Semiconductor is a phototransistor with a peak wavelength of 630nm. It has a max operating temperature of 85 °C and a min operating temperature of -40 °C. The terminal finish is Matte Tin (Sn) and it has a max dark current of 100nA. It is designed for surface mount mounting and can be used in optoelectronic applications.
TPS618
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .07 mA; No. of Functions: 1; Shape: ROUND; Maximum Power Dissipation: .075 W;
SFH300FA4
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;
SFH309FA
Siemens
PHOTO TRANSISTOR; Infrared (IR) Range: YES; Peak Wavelength (nm): 900; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA; Size: 3 mm;
LS600
Texas Instruments
LS600 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, has response time of 0.0000015s, and collector-emitter breakdown voltage of 50V. Ideal for applications requiring infrared detection in a round shape through-hole mount configuration.
SDP8436-002
Honeywell Sensing And Control
Honeywell Sensing And Control's SDP8436-002 is a PHOTO TRANSISTOR with max temp of 100°C, min temp of -40°C, and max power dissipation of 0.06 W. With a response time of 0.00001 s, it is ideal for optoelectronic applications requiring precise light detection in various environments.
TEMT6000
Vishay Intertechnology's TEMT6000 is a phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, with max power dissipation of 0.1W and dark current of 50nA. Ideal for surface mount applications, it has a max on state current of 0.02A.
SD2440-002
Micro Switch
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .125 W; Maximum Response Time: .000015 s;
SFH325FA-3
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .165 W; Maximum Dark Current: 200 nA; Configuration: SINGLE; Maximum On State Current: .015 A;
TPS603
PHOTO TRANSISTOR; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 20 V; Configuration: SINGLE;
BPW77NA
Temic Semiconductors
PHOTO TRANSISTOR; Nominal Light Current: 10 mA; Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Configuration: SINGLE; Maximum Dark Current: 100 nA;
QSD123.A4R0
QSD123.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 4mA, dark current of 100nA, and IR range. Ideal for applications requiring reliable photo detection in various temperature conditions.
TIL606
TIL606 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With fast response time of 8ns, it's ideal for surface mount applications requiring precise light detection.
SFH3015FA
Osram Opto Semiconductors' SFH3015FA is a single phototransistor with peak wavelength of 870nm. It operates b/w -25°C to 85°C, featuring a nominal light current of 100mA and max dark current of 50nA. Ideal for applications requiring infrared detection, it has a min collector-emitter breakdown voltage of 15V and can handle a max on state current of 0.015A.
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SPS103
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Minimum Operating Temperature: -20 Cel; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;
SPS103C
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .05 W; Peak Wavelength (nm): 900; Minimum Operating Temperature: -25 Cel; Maximum Operating Temperature: 100 Cel;
SPS1118C
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Peak Wavelength (nm): 880; Maximum Operating Temperature: 75 Cel; Maximum Power Dissipation: .07 W;
SPS135C
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum On State Current: .02 A; Maximum Dark Current: 200 nA; Maximum Power Dissipation: .07 W;
SPS181C
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .07 W; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 75 Cel; Peak Wavelength (nm): 880;
Sanyo Electric
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 75 Cel; Peak Wavelength (nm): 880; Minimum Operating Temperature: -20 Cel; Maximum Dark Current: 200 nA;
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .07 W; Peak Wavelength (nm): 880; Minimum Operating Temperature: -20 Cel; Maximum Dark Current: 200 nA;
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 880; Maximum Operating Temperature: 75 Cel; Minimum Operating Temperature: -20 Cel; Maximum On State Current: .02 A;
SPS189C
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 75 Cel; Peak Wavelength (nm): 880; Minimum Operating Temperature: -20 Cel; Maximum On State Current: .02 A;
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