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BPW77NA

Vishay Intertechnology

BPW77NA by Vishay Intertechnology

Vishay Intertechnology's BPW77NA is a 4mm phototransistor with peak wavelength of 850nm. It operates b/w -40 to 125°C, has a response time of 0.0000038s, and features matte tin terminal finish. Ideal for applications requiring IR detection in through-hole mounting setups.

Median Price

$3.210

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 740 parts In-Stock

1+ parts

$1.240

100+ parts

$1.094

1k+ parts

$1.077

10k+ parts

$1.050

740

$1.240

$1.094

$1.077

$1.050

Farnell

UK . 1,993 parts In-Stock

1+ parts

$3.110

100+ parts

$1.600

1k+ parts

$1.200

10k+ parts

-

1,993

$3.110

$1.600

$1.200

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Mouser Electronics

USA . 2,575 parts In-Stock

1+ parts

$3.310

100+ parts

$1.780

1k+ parts

$1.660

10k+ parts

$1.590

2,575

$3.310

$1.780

$1.660

$1.590

Chip1Stop

Japan . 368 parts In-Stock

1+ parts

$3.336

100+ parts

$1.935

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-

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368

$3.336

$1.935

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Newark

USA . 41 parts In-Stock

1+ parts

$3.410

100+ parts

$1.800

1k+ parts

$1.740

10k+ parts

$1.720

41

$3.410

$1.800

$1.740

$1.720

DigiKey

USA . 12,036 parts In-Stock

1+ parts

$3.600

100+ parts

$2.071

1k+ parts

$1.740

10k+ parts

$1.597

12,036

$3.600

$2.071

$1.740

$1.597

Element14

Singapore . 1,993 parts In-Stock

1+ parts

$5.260

100+ parts

$3.080

1k+ parts

$2.340

10k+ parts

$2.200

1,993

$5.260

$3.080

$2.340

$2.200

RS (Exports)

UK . 2,140 parts In-Stock

1+ parts

-

100+ parts

$2.301

1k+ parts

$1.593

10k+ parts

-

2,140

-

$2.301

$1.593

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TTI

USA . 800 parts In-Stock

1+ parts

-

100+ parts

$1.700

1k+ parts

$1.590

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800

-

$1.700

$1.590

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Verical

USA . 740 parts In-Stock

1+ parts

-

100+ parts

$1.094

1k+ parts

$1.077

10k+ parts

$1.050

740

-

$1.094

$1.077

$1.050

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,400 parts In-Stock

1+ parts

$1.840

100+ parts

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10,400

$1.840

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ComSIT Distribution GmbH

Germany . 14,490 parts In-Stock

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VNN

France . 1,557 parts In-Stock

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1,557

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Chip Stock

USA . 1,125 parts In-Stock

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Rutronik

Germany . 1,000 parts In-Stock

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$2.240

10k+ parts

$2.120

1,000

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-

$2.240

$2.120

Ack Elektronik San.Tic.Ltd.Sti

. 887 parts In-Stock

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887

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Nova Conductors

Japan . 650 parts In-Stock

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650

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ComSIT USA

USA . 490 parts In-Stock

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490

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Jameco Electronics

USA . 351 parts In-Stock

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351

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 646 parts In-Stock

1+ parts

$0.593

100+ parts

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646

$0.593

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Continental Prestige Electronics

USA . 2,364 parts In-Stock

1+ parts

$2.560

100+ parts

$1.390

1k+ parts

$1.330

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2,364

$2.560

$1.390

$1.330

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Argo Parts USA

USA . 3,618 parts In-Stock

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Perfect Parts

USA . 2,774 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Assy Fe

Spain . 3 parts In-Stock

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3

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Overview

Discover the Vishay Intertechnology BPW77NA phototransistor, a top-quality component designed for precision performance in a variety of applications. With Vishay's reputation for excellence in electronic components, you can trust that the BPW77NA offers unmatched reliability and durability. Whether used in industrial automation, security systems, or remote controls, this phototransistor delivers exceptional sensitivity and response time. Experience the value and benefits of Vishay's BPW77NA, providing customers with an advanced solution for their optoelectronic needs.

Feature Benefit Bullets

Configuration: SINGLE

Having a single configuration simplifies wiring and reduces complexity in setups, making it easier to use and integrate into various systems.

Size: 4 mm

Compact size allows for easy placement and integration in small spaces or components, making it versatile for different applications.

Peak Wavelength (nm): 850

Optimal peak wavelength for efficient detection and response to light in the 850 nm range, making it suitable for specific applications requiring this wavelength.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor, it provides high sensitivity to light, making it ideal for applications where precise light detection is required.

Maximum Operating Temperature: 125 °C

High maximum operating temperature tolerance allows for reliable performance in various environmental conditions without risk of overheating.

Shape: ROUND

Round shape provides even distribution of light detection, ensuring accuracy and consistency in readings.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature tolerance allows for operation in cold environments without risk of malfunctions, enhancing its versatility.

Terminal Finish: Matte Tin (Sn)

Matte tin finish ensures good contact and conductivity, improving the reliability and longevity of the product.

Nominal Light Current: 7.5 mA

High nominal light current value allows for strong signal detection and better performance in low-light conditions.

Maximum Dark Current: 100 nA

Low maximum dark current ensures minimal interference from ambient light, providing accurate readings even in low-light environments.

Infrared (IR) Range: YES

Inclusion of an infrared range allows for detection and response to infrared light, expanding the range of applications it can be used for.

Maximum Response Time: 0.0000038 s

Ultra-fast response time ensures quick detection and reaction to changes in light levels, making it suitable for high-speed applications.

Minimum Collector-emitter Breakdown Voltage: 70 V

High minimum collector-emitter breakdown voltage provides protection against voltage spikes and surges, increasing the durability and reliability of the product.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature allows for secure and stable installation, reducing the risk of disconnection or damage during operation.

Technical Specifications

Phototransistors BPW77NA attributes and parameters. Explore more Phototransistors devices from Vishay Intertechnology

Specs

Additional Features:

HIGH SENSITIVITY

Minimum Collector-emitter Breakdown Voltage:

70 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

7.5 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Maximum Response Time:

.0000038 s

Shape:

ROUND

Size:

4 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Trade Compliance

BPW77NA Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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