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LS611

Texas Instruments

LS611 by Texas Instruments

LS611 by Texas Instruments is a single phototransistor with a round shape. It operates b/w -65°C to 125°C, with a max power dissipation of 0.05W. Ideal for applications requiring fast response times and infrared range detection.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 19,895 parts In-Stock

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ComSIT USA

USA . 19,895 parts In-Stock

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19,895

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Vyrian

USA . 5,898 parts In-Stock

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5,898

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Digiode

USA . 2,877 parts In-Stock

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2,877

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Distributors (Availability)

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Parana Technologies

USA . 841 parts In-Stock

1+ parts

$0.449

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$1.606

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841

$0.449

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$1.606

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ChromeModa Solutions

Germany . 6,196 parts In-Stock

1+ parts

$0.505

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$0.414

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6,196

$0.505

$0.414

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IDEA Electronic Components Group

UK . 696 parts In-Stock

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$0.505

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$0.454

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696

$0.505

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$0.454

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AZTECH Wire

Italy . 443 parts In-Stock

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$8.023

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443

$8.023

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One Stop Electronics

USA . 743 parts In-Stock

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$10.100

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743

$10.100

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Corphita

USA . 4,063 parts In-Stock

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4,063

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DigiPath Technology Company

USA . 1,868 parts In-Stock

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$0.455

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1,868

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$0.455

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Assy Fe

Spain . 78 parts In-Stock

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Overview

Unlock endless possibilities with the LS611 phototransistor by Texas Instruments. Known for their superior quality and reliability, Texas Instruments has crafted a product that offers exceptional performance in a variety of applications. Whether you're designing automated systems or creating innovative electronics, the LS611 delivers unparalleled value with its fast response time, low power consumption, and wide operating temperature range. Trust Texas Instruments to provide the tools you need to bring your vision to life.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into various circuit designs without the need for complex setups.

Optoelectronic Type: PHOTO TRANSISTOR

Photo transistors are known for their high sensitivity to light, making this product ideal for applications where detecting light levels is crucial.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this phototransistor can withstand harsh environmental conditions without compromising performance.

Shape: ROUND

The round shape allows for easy mounting and alignment in various applications.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures reliable performance even in extremely cold environments.

Maximum Power Dissipation: 0.05 W

With low power dissipation, this phototransistor is energy-efficient and suitable for battery-powered applications.

Nominal Light Current: 1 mA

The high nominal light current ensures accurate detection and response to varying light levels.

Maximum Dark Current: 25 nA

Low dark current results in minimal noise and reliable operation even in low light conditions.

Infrared (IR) Range: YES

Having an infrared range expands the range of applications where this phototransistor can be used, such as in remote controls or security systems.

Maximum Response Time: 0.000008 s

The fast response time ensures quick reaction to changes in light levels, making this product suitable for high-speed applications.

Minimum Collector-emitter Breakdown Voltage: 50 V

The high collector-emitter breakdown voltage provides protection against voltage spikes, increasing the reliability of the phototransistor.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies installation and ensures a secure connection in various circuit setups.

Technical Specifications

Phototransistors LS611 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

1 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

LS611 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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