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LS616

Texas Instruments

LS616 by Texas Instruments

LS616 by Texas Instruments is a single phototransistor with max temp of 125°C and min temp of -65°C. It has nominal light current of 6mA, response time of 0.000008s, and IR range. Ideal for applications requiring fast response time in temperature-sensitive environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,115 parts In-Stock

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Digiode

USA . 156 parts In-Stock

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156

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Distributors (Availability)

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Parana Technologies

USA . 2,124 parts In-Stock

1+ parts

$0.273

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$1.533

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2,124

$0.273

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$1.533

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DigiPath Technology Company

USA . 1,425 parts In-Stock

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$0.301

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$0.277

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1,425

$0.301

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ChromeModa Solutions

Germany . 6,870 parts In-Stock

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$0.307

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$0.252

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6,870

$0.307

$0.252

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IDEA Electronic Components Group

UK . 81 parts In-Stock

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$0.307

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$0.276

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81

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Semicontronic

India . 1,197 parts In-Stock

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$2.100

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$2.048

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$2.037

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$2.100

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$2.037

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Ampacity Inc.

Singapore . 1,058 parts In-Stock

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$3.100

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$3.100

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AZTECH Wire

Italy . 488 parts In-Stock

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$8.538

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488

$8.538

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One Stop Electronics

USA . 746 parts In-Stock

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$15.100

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746

$15.100

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Corphita

USA . 1,259 parts In-Stock

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Corohmni

South Africa . 408 parts In-Stock

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Assy Fe

Spain . 158 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the LS616 phototransistor. As a leading manufacturer in the industry, Texas Instruments has crafted a top-of-the-line product that delivers superior performance in various applications. From industrial automation to security systems, the LS616 offers exceptional value with its fast response time, high sensitivity, and wide operating temperature range. Trust Texas Instruments to provide you with cutting-edge technology that will exceed your expectations.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into various design layouts without taking up too much space.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor, this product is sensitive to light, making it ideal for applications where light detection is required.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this phototransistor can withstand harsh environmental conditions without malfunctioning.

Shape: ROUND

Round shape allows for easy mounting and alignment in various electronic applications.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures that this phototransistor can be used in cold environments without any issues.

Maximum Power Dissipation: 0.05 W

Low power dissipation ensures energy efficiency and prevents overheating during operation.

Nominal Light Current: 6 mA

High light current allows for accurate light detection and precise measurement in various applications.

Maximum Dark Current: 25 nA

Low dark current ensures minimal leakage current when no light is present, improving overall performance and accuracy.

Infrared (IR) Range: YES

Infrared range capability enables this phototransistor to detect invisible light, expanding its range of applications.

Maximum Response Time: 0.000008 s

Fast response time allows for real-time detection and quick signal transmission, making this phototransistor suitable for high-speed applications.

Minimum Collector-emitter Breakdown Voltage: 50 V

High breakdown voltage ensures electrical safety and prevents damage to the phototransistor during voltage spikes.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable installation of the phototransistor in electronic circuits.

Technical Specifications

Phototransistors LS616 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

6 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

LS616 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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