Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Peak Wavelength (nm): 860; Minimum Operating Temperature: -55 Cel;
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Corphita
Phototransistors SFH309-2 attributes and parameters. Explore more Phototransistors devices from Infineon Technologies
Maximum Dark Current:
JESD-609 Code:
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Maximum On State Current:
Maximum Operating Temperature:
Minimum Operating Temperature:
Peak Wavelength (nm):
Maximum Power Dissipation:
Maximum Response Time:
Sub-Category:
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Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
NUP2105LT1G
Onsemi
NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
2N7002
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
SMBJ18CA
Shenzhen Socay Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
STMicroelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Jinan Jingheng Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
EU2B-YS2J03C
Idec
ROTARY SWITCH;
USBLC6-2SC6
USBLC6-2SC6 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 6V. It has a max clamping voltage of 17V and operates in temperatures ranging from -40 to 125°C. This device, with dual terminals and matte tin finish, is ideal for protecting sensitive electronics from voltage spikes in various applications.
NC7WZ07P6X
The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Changzhou Starsea Electronics
LM358M
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Bytesonic Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
M24308/2-1F
Souriau
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
261
New England Microwave
Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;
BSS138
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;
08055C104KAT4A
KYOCERA AVX
08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.
TPS616(BC,F)
Toshiba
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.1 mm; Peak Wavelength (nm): 900; Maximum Power Dissipation: .075 W; Configuration: SINGLE;
FLD00030
The Onsemi FLD00030 is a single phototransistor with peak wavelength of 630nm. It operates b/w -40 °C to 85°C, with collector-emitter breakdown voltage of 6V. Ideal for light sensing applications due to its nominal light current of 1.1mA and low dark current of 100nA.
TPS617
PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Size: 1.5 mm; Peak Wavelength (nm): 870; Minimum Collector-emitter Breakdown Voltage: 30 V;
BPX89
Infineon Technologies' BPX89 is a phototransistor with max operating temp of 85°C and min of -40°C. It features max dark current of 200nA and response time of 0.000008s. Ideal for applications requiring THROUGH HOLE MOUNT, such as light sensing in various electronic devices.
PT480FE0000F
Sharp Corporation
Sharp Corporation's PT480FE0000F is a 1.6mm PHOTO TRANSISTOR with peak wavelength of 860nm. It operates b/w -25°C to 85°C, with collector-emitter breakdown voltage of 35V. Ideal for applications requiring infrared detection and light current of 0.8mA with low dark current at 100nA.
SFH300-3
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Response Time: .00001 s; Peak Wavelength (nm): 850;
1N5723
1N5723 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. Ideal for applications requiring fast response time and IR detection in through-hole mounting setups.
BPW77NA
Temic Semiconductors
PHOTO TRANSISTOR; Nominal Light Current: 10 mA; Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Configuration: SINGLE; Maximum Dark Current: 100 nA;
TEFT4300
Vishay Intertechnology
TEFT4300 by Vishay Intertechnology is a 3mm phototransistor with peak wavelength of 925nm. It operates b/w -40 to 100°C, with max power dissipation of 0.185W and response time of 0.0000023s. Ideal for applications requiring IR detection in through-hole mounting configurations.
TPS615-C
PHOTO TRANSISTOR; Peak Wavelength (nm): 800; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Operating Temperature: -30 Cel; Maximum Dark Current: 100 nA;
TIL135
TIL135 by Texas Instruments is a phototransistor with 12 separate elements. It operates in temperatures from -65°C to 125°C, with nominal light current of 2mA and max dark current of 100nA. Ideal for applications requiring IR detection and a min collector-emitter breakdown voltage of 50V.
VEMT2023SLX01
VEMT2023SLX01 by Vishay Intertechnology is a single configuration phototransistor with peak wavelength of 860nm. It operates in temperatures ranging from -40°C to 100°C and has a nominal light current of 2.7mA. This optoelectronic component is suitable for applications requiring infrared range detection and a min collector-emitter breakdown voltage of 20V.
SFH314FA-2
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Dark Current: 200 nA; Maximum Response Time: .00001 s;
TPS622
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Maximum On State Current: .05 A; Maximum Power Dissipation: .075 W; Minimum Collector-emitter Breakdown Voltage: 30 V;
TEMT6000X01
The Vishay Intertechnology TEMT6000X01 is a single phototransistor with a peak wavelength of 570nm. It operates b/w -40°C to 100°C, with a max power dissipation of 0.1W. Ideal for applications requiring photo detection in compact spaces due to its small size of 2.4mm and surface mounting feature.
SFH309FA-4
SFH309FA-4 by Infineon Technologies is a phototransistor with a peak wavelength of 900nm. It can operate in temperatures ranging from -55°C to 100°C and has a max power dissipation of 0.165W. This through-hole mount device is commonly used in applications requiring fast response times and low dark current.
BPY62-4
Osram Opto Semiconductors
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Maximum Dark Current: 50 nA; Nominal Light Current: 9.6 mA; Maximum Response Time: .000009 s;
TEST2600
PHOTO TRANSISTOR; Maximum Dark Current: 100 nA; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 70 V; No. of Functions: 1; Nominal Light Current: 2.5 mA;
SPS189C
The Onsemi SPS189C is a phototransistor with peak wavelength of 880nm, max temp of 75 °C, and max power dissipation of 0.07W. Ideal for applications requiring through hole mounting, it has a max on state current of 0.02A and low dark current at 200nA.
OP804SL
Optek Technology
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: YES; Size: 4.65 mm; Maximum On State Current: .05 A; Minimum Collector-emitter Breakdown Voltage: 30 V;
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PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; No. of Functions: 1; Maximum Power Dissipation: .165 W;
Siemens
PHOTO TRANSISTOR; Nominal Light Current: 1 mA; Maximum Operating Temperature: 100 Cel; Shape: ROUND; Maximum Dark Current: 200 nA; Additional Features: DAYLIGHT FILTER, HIGH RELIABILITY;
SFH3015FA
Osram Opto Semiconductors' SFH3015FA is a single phototransistor with peak wavelength of 870nm. It operates b/w -25°C to 85°C, featuring a nominal light current of 100mA and max dark current of 50nA. Ideal for applications requiring infrared detection, it has a min collector-emitter breakdown voltage of 15V and can handle a max on state current of 0.015A.
SFH309FA
SFH309FA by Infineon Technologies is a phototransistor with peak wavelength of 900nm, max operating temp of 100°C, and min operating temp of -55°C. Ideal for applications requiring through hole mounting, it has a max on state current of 0.015A and max dark current of 200nA.
PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: BRIGHT TIN OVER NICKEL; Nominal Light Current: .4 mA; Maximum Power Dissipation: .165 W; JESD-609 Code: e3;
PHOTO TRANSISTOR; Infrared (IR) Range: YES; Peak Wavelength (nm): 900; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA; Size: 3 mm;
SFH3219-Z
PHOTO TRANSISTOR; Nominal Light Current: .063 mA; Shape: ROUND; Size: 2.575 mm; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE;
SFH3710-Z
PHOTO TRANSISTOR; Terminal Finish: MATTE TIN OVER NICKEL; Size: 1.4 mm; Shape: RECTANGULAR; Infrared (IR) Range: NO; Peak Wavelength (nm): 570;
SFH309FA-4/5
PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; Nominal Light Current: 1 mA; Maximum On State Current: .015 A; Maximum Power Dissipation: .165 W;
SFH3710
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Shape: SQUARE; Packing Method: TR, 7 INCH; Maximum Dark Current: 50 nA;
SFH313FA
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Size: 5 mm; Configuration: SINGLE; Minimum Operating Temperature: -40 Cel;
PHOTO TRANSISTOR; Additional Features: DAYLIGHT FILTER; Infrared (IR) Range: YES; Minimum Operating Temperature: -55 Cel; Size: 5 mm; No. of Functions: 1;
SFH300FA
SFH300FA by Infineon Technologies is a phototransistor with peak wavelength of 870nm, max operating temp of 100°C, and min operating temp of -40°C. It has a max on state current of 0.05A and terminal finish of Sn/Pb. Ideal for applications requiring precise light detection in environments with varying temperatures.
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Peak Wavelength (nm): 880; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 100 Cel;
PHOTO TRANSISTOR; Size: 5 mm; Configuration: SINGLE; No. of Functions: 1; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel;
SFH3400-Z
PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 20 V; No. of Functions: 1; Infrared (IR) Range: YES; Configuration: SINGLE; Shape: SQUARE;
SFH3710-3/4-Z
PHOTO TRANSISTOR; Minimum Operating Temperature: -40 Cel; Configuration: SINGLE; Infrared (IR) Range: NO; Maximum Dark Current: 50 nA; Peak Wavelength (nm): 570;
SFH313FA-3/4
The Osram Opto Semiconductors SFH313FA-3/4 is a 5mm phototransistor with peak wavelength of 870nm. It operates b/w -40 to 100°C, with max power dissipation of 0.2W and response time of 0.000014s. Ideal for applications requiring fast light detection in IR range, such as optical sensors and proximity detectors.
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