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1N4378

Texas Instruments

1N4378 by Texas Instruments

1N4378 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With response time of 0.000002s, it's ideal for applications requiring precise light detection in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,608 parts In-Stock

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Digiode

USA . 228 parts In-Stock

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Native Components

USA . 1 parts In-Stock

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$0.474

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$0.455

1

$0.474

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$0.455

Northwest PG Solutions

USA . 872 parts In-Stock

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$0.521

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$0.460

872

$0.521

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$0.460

Parana Technologies

USA . 445 parts In-Stock

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$0.644

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$1.706

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$0.644

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DigiPath Technology Company

USA . 1,205 parts In-Stock

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$0.710

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$0.653

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$0.710

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ChromeModa Solutions

Germany . 5,439 parts In-Stock

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$0.724

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$0.594

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$0.724

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IDEA Electronic Components Group

UK . 1,800 parts In-Stock

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$0.724

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$0.652

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$0.724

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Semicontronic

India . 1,576 parts In-Stock

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$3.100

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$3.022

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$3.007

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Ampacity Inc.

Singapore . 717 parts In-Stock

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$9.100

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$9.100

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AZTECH Wire

Italy . 693 parts In-Stock

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$12.409

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One Stop Electronics

USA . 402 parts In-Stock

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$16.100

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$16.100

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Corphita

USA . 2,732 parts In-Stock

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Corohmni

South Africa . 193 parts In-Stock

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Overview

Elevate your electronics with the Texas Instruments 1N4378 phototransistor. With a peak wavelength of 900nm and maximum operating temperature of 125°C, this component offers superior quality and reliability for a wide range of applications. From light sensors to infrared remote controls, the possibilities are endless. Trust in Texas Instruments' reputation for excellence and innovation, and experience the value and performance that the 1N4378 brings to your projects.

Feature Benefit Bullets

Peak Wavelength: 900 nm

This phototransistor is optimized for detecting light at 900nm, making it ideal for applications requiring sensitivity in this wavelength range.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this phototransistor can withstand and perform reliably in extreme temperature environments.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C ensures that this phototransistor can also function effectively in colder conditions, enhancing its versatility.

Maximum Power Dissipation: 0.05 W

The low maximum power dissipation of only 0.05 W indicates that this phototransistor is energy-efficient and suitable for designs where power conservation is important.

Maximum Dark Current: 25 nA

With a maximum dark current of 25 nanoamperes, this phototransistor offers low leakage current, resulting in accurate light detection and minimal interference.

Maximum Response Time: 0.000002 s

The ultra-fast maximum response time of 0.000002 seconds allows this phototransistor to quickly react to changes in light intensity, enabling rapid sensing and detection capabilities.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and ensures secure placement of the phototransistor in electronic circuits, enhancing ease of use and reliability.

Technical Specifications

Phototransistors 1N4378 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

25 nA

Mounting Feature:

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000002 s

Sub-Category:

Photo Transistors

Trade Compliance

1N4378 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5961-00-078-9592, 5961000789592, 5980-01-170-6517, 5980011706517

NIIN

000789592, 011706517

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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