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TIL412

Texas Instruments

TIL412 by Texas Instruments

TIL412 by Texas Instruments is a PHOTO DARLINGTON phototransistor with max operating temp of 85°C and min of -40°C. It has max dark current of 100nA, response time of 0.001s, and on state current of 0.0001A. Ideal for optoelectronic applications requiring precise light detection in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,824 parts In-Stock

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Digiode

USA . 3,829 parts In-Stock

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Parana Technologies

USA . 1,140 parts In-Stock

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$0.486

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$1.620

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$0.486

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$1.620

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DigiPath Technology Company

USA . 24 parts In-Stock

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$0.535

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$0.492

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IDEA Electronic Components Group

UK . 1,968 parts In-Stock

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$0.546

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$0.491

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ChromeModa Solutions

Germany . 450 parts In-Stock

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$0.546

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$0.448

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One Stop Electronics

USA . 195 parts In-Stock

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$4.100

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AZTECH Wire

Italy . 777 parts In-Stock

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$16.681

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Semicontronic

India . 891 parts In-Stock

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$18.100

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$17.648

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$17.557

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Ampacity Inc.

Singapore . 1,477 parts In-Stock

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Corphita

USA . 598 parts In-Stock

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Corohmni

South Africa . 166 parts In-Stock

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Overview

Unlock the power of light sensing with the TIL412 Phototransistor from Texas Instruments. With a reputation for quality and reliability, Texas Instruments delivers cutting-edge technology that exceeds industry standards. The TIL412 is perfect for applications in automation, robotics, and security systems, offering fast response times and low dark current for superior performance. Experience the value and benefits of this top-of-the-line phototransistor today and take your projects to the next level.

Feature Benefit Bullets

Optoelectronic Type: PHOTO DARLINGTON

Photo Darlington type offers high sensitivity and amplification, making it suitable for applications where a weak signal needs to be accurately detected.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows this phototransistor to be used in varying environmental conditions without risking performance degradation.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures reliable operation even in extremely cold environments, making it versatile for different applications.

Maximum Dark Current: 100 nA

Low dark current means minimal noise when the phototransistor is in the off state, resulting in accurate and reliable signal detection.

Maximum Response Time: 0.001 s

Fast response time allows quick detection and processing of signals, making this phototransistor suitable for high-speed applications.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature provides secure and stable installation, ensuring the phototransistor stays in place during operation.

Maximum On State Current: 0.0001 A

Low on-state current reduces power consumption and heat generation, making this phototransistor energy-efficient and suitable for battery-powered devices.

Technical Specifications

Phototransistors TIL412 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

100 nA

Mounting Feature:

Maximum On State Current:

.0001 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Maximum Response Time:

.001 s

Sub-Category:

Photo Transistors

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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