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TIL81

Texas Instruments

TIL81 by Texas Instruments

TIL81 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It has max operating temp of 125°C and min of -60°C. With max power dissipation of 0.25W, it's ideal for applications requiring fast response time such as light sensing in industrial automation.

Median Price

$23.192

Lifecycle Status

Suppliers In-Stock

15

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1k+

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Freelance Electronics

USA . 6 parts In-Stock

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$23.192

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$24.352

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$22.960

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Vyrian

USA . 8,686 parts In-Stock

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Digiode

USA . 1,398 parts In-Stock

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Lakeview Electronics

USA . 125 parts In-Stock

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ABC Electronics Ltd.

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Manotoh

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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R&J Components

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Fibra_Brandt Electronic GMBH

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ECAB

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Manoshevitz Elec. Sales

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MISTER SPROCKETS

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LittleDiode

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Classic Components Corporation

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Parana Technologies

USA . 1,037 parts In-Stock

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$0.460

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$1.610

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DigiPath Technology Company

USA . 297 parts In-Stock

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$0.507

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ChromeModa Solutions

Germany . 4,897 parts In-Stock

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IDEA Electronic Components Group

UK . 801 parts In-Stock

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AZTECH Wire

Italy . 745 parts In-Stock

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One Stop Electronics

USA . 979 parts In-Stock

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Corphita

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Overview

Unleash the power of light with the TIL81 phototransistor from Texas Instruments. Designed for precision and reliability, this cutting-edge component offers peak performance with a peak wavelength of 900nm and a maximum operating temperature of 125°C. Whether used in industrial automation or electronic circuits, the TIL81 delivers unparalleled sensitivity and speed, ensuring optimal results in any application. Trust in Texas Instruments to provide top-notch quality and innovation, setting new standards in the industry. Elevate your projects with the TIL81 and experience the difference today.

Feature Benefit Bullets

Peak Wavelength: 900 nm

The peak wavelength of 900 nm makes this phototransistor suitable for applications where sensitivity to near-infrared light is required.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this phototransistor can withstand elevated temperatures, making it suitable for various industrial and automotive applications.

Minimum Operating Temperature: -60 °C

The minimum operating temperature of -60°C allows this phototransistor to function effectively in cold environments, expanding its usage in a wide range of applications.

Maximum Power Dissipation: 0.25 W

The high maximum power dissipation of 0.25 W ensures that the phototransistor can handle high power levels without damage, making it reliable for demanding applications.

Maximum Dark Current: 100 nA

The low maximum dark current of 100 nA indicates minimal leakage current in the absence of light, ensuring accurate light sensing and improved performance.

Maximum Response Time: 0.000008 s

With a fast response time of 0.000008 seconds, this phototransistor can quickly detect changes in light levels, making it ideal for applications requiring rapid response times.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides secure and stable mounting of the phototransistor on a circuit board, ensuring reliable and long-lasting connections.

Maximum On State Current: 0.05 A

The high maximum on-state current of 0.05 A allows the phototransistor to handle higher current loads, making it suitable for applications that require switching or amplifying current signals.

Technical Specifications

Phototransistors TIL81 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

100 nA

Mounting Feature:

Maximum On State Current:

.05 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.25 W

Maximum Response Time:

.000008 s

Sub-Category:

Photo Transistors

Trade Compliance

TIL81 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5961-01-009-4958, 5961010094958, 5961-01-130-3499, 5961011303499, 5961-14-364-8468, 5961143648468, 5980-01-096-8503, 5980010968503

NIIN

010094958, 011303499, 143648468, 010968503

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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