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TIL81HR2

Texas Instruments

TIL81HR2 by Texas Instruments

TIL81HR2 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.25W. Ideal for applications requiring fast response time, it has max on state current of 0.05A and dark current of 100nA.

Median Price

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Lifecycle Status

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5

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1k+

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Vyrian

USA . 5,706 parts In-Stock

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Digiode

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PC Components Company LLC

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Bristol Electronics

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Electronic Expediters

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Parana Technologies

USA . 1,952 parts In-Stock

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$0.392

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$1.582

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DigiPath Technology Company

USA . 1,184 parts In-Stock

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$0.431

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ChromeModa Solutions

Germany . 4,160 parts In-Stock

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IDEA Electronic Components Group

UK . 2,262 parts In-Stock

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$0.396

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One Stop Electronics

USA . 153 parts In-Stock

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$10.100

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AZTECH Wire

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Authorized Procurement Solutions

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Overview

Enhance your next project with the TIL81HR2 phototransistor by Texas Instruments, renowned for their top-quality electronic components. Designed for peak performance at a wavelength of 900nm, this phototransistor operates flawlessly in temperatures ranging from -60°C to 125°C. With a maximum power dissipation of 0.25W and ultra-fast response time of 0.000008s, this through-hole mount device is perfect for applications requiring precision sensing and control. Trust Texas Instruments for cutting-edge technology that delivers unmatched reliability and efficiency. Elevate your designs with the TIL81HR2 today!

Feature Benefit Bullets

Peak Wavelength (nm): 900

This specific peak wavelength allows for accurate detection and sensing of light in a precise range, making it suitable for various applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this phototransistor can withstand elevated temperatures without compromising its performance, ensuring reliability in challenging environments.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature enables the phototransistor to function effectively in cold conditions, extending its usability in a wide range of environments.

Maximum Power Dissipation: 0.25 W

The high maximum power dissipation capability of this phototransistor allows it to handle higher power loads without overheating, enhancing its durability and performance.

Maximum Dark Current: 100 nA

The low maximum dark current ensures minimal noise and accurate detection of light signals, making this phototransistor ideal for precision applications where sensitivity is crucial.

Maximum Response Time: 0.000008 s

With an extremely fast maximum response time, this phototransistor can quickly react to changes in light intensity, making it suitable for high-speed applications that require rapid and accurate sensing.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides a secure and stable installation method, ensuring that the phototransistor remains firmly in place during operation, reducing the risk of mechanical failures.

Maximum On State Current: 0.05 A

The high maximum on-state current capacity allows this phototransistor to handle large current flows, making it suitable for applications that require robust and reliable performance under high current conditions.

Technical Specifications

Phototransistors TIL81HR2 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

100 nA

Mounting Feature:

Maximum On State Current:

.05 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.25 W

Maximum Response Time:

.000008 s

Sub-Category:

Photo Transistors

Trade Compliance

TIL81HR2 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5961-01-130-3499, 5961011303499

NIIN

011303499

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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