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SPS103

Onsemi

SPS103 by Onsemi

The Onsemi SPS103 is a phototransistor with peak wavelength of 800nm, operating from -20 °C to 100°C. It has max power dissipation of 0.05W and dark current of 100nA. Ideal for applications requiring through hole mounting in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,241 parts In-Stock

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Digiode

USA . 549 parts In-Stock

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549

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Problanco Electronics

Mexico . 7,100 parts In-Stock

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7,100

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Kulean Microsystems

USA . 6,729 parts In-Stock

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6,729

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TANS Electronics

Latvia . 5,334 parts In-Stock

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SupplyDigital Components

Austria . 3,680 parts In-Stock

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Corphita

USA . 1,720 parts In-Stock

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UHIMA Technologies

Türkiye . 596 parts In-Stock

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Corohmni

South Africa . 241 parts In-Stock

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Overview

Unleash the power of light with the SPS103 by Onsemi! Crafted with precision and expertise by a trusted manufacturer, this phototransistor offers unparalleled quality and reliability. Ideal for a wide range of applications, this versatile component provides exceptional value and benefits to customers. Experience the advantages of superior performance and efficiency with the SPS103 - your gateway to innovation and success.

Feature Benefit Bullets

Peak Wavelength (nm): 800

The peak wavelength of 800 nm makes this phototransistor suitable for applications requiring detection in the near-infrared spectrum.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100 °C, this phototransistor can withstand high temperature environments, increasing its versatility for various applications.

Minimum Operating Temperature: -20 °C

The ability to operate at temperatures as low as -20 °C ensures this phototransistor can be used in cold environments without any issues.

Maximum Power Dissipation: 0.05 W

The low maximum power dissipation of 0.05 W indicates that this phototransistor is energy-efficient and can help reduce overall power consumption in a system.

Maximum Dark Current: 100 nA

With a maximum dark current of 100 nA, this phototransistor offers high sensitivity and low noise characteristics, making it ideal for applications requiring precise light detection.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the phototransistor onto a PCB or mounting surface, ensuring reliable performance in various applications.

Technical Specifications

Phototransistors SPS103 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Maximum Dark Current:

100 nA

Mounting Feature:

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Peak Wavelength (nm):

800

Maximum Power Dissipation:

.05 W

Sub-Category:

Photo Transistors

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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