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QSD724

Onsemi

QSD724 by Onsemi

The Onsemi QSD724 is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W and response time of 0.00001s. Ideal for IR applications, it has a collector-emitter breakdown voltage of 30V and nominal light current of 3.5mA.

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Digiode

USA . 2,423 parts In-Stock

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Advanced Electronics

New Zealand . 1,500 parts In-Stock

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$0.545

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Kepictronics

USA . 20,000 parts In-Stock

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Metaverse IC Inc.

Canada . 8,495 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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Corphita

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Supply Digital

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TANS Electronics

Latvia . 1,048 parts In-Stock

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SupplyDigital Components

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Corohmni

South Africa . 337 parts In-Stock

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UHIMA Technologies

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Overview

Enhance your optical sensing applications with the QSD724 phototransistor from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. The QSD724 offers a peak wavelength of 880nm, making it perfect for infrared applications. With a fast response time and low dark current, this phototransistor delivers accurate and efficient performance. Whether you're designing optical switches, encoders, or sensors, the QSD724 provides unmatched value and benefits to meet your application needs. Trust Onsemi for superior optoelectronic solutions.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easy integration into various electronic devices and circuits.

Size: 4.675 mm

Compact size enables the phototransistor to be used in space-constrained applications.

Peak Wavelength (nm): 880

Peak wavelength of 880 nm provides sensitivity to a specific range of light, making it suitable for targeted applications.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor type ensures efficient light detection and signal amplification.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for reliable performance in various environmental conditions.

Shape: ROUND

Round shape facilitates easy installation and connection within circuit designs.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality even in cold environments.

Terminal Finish: Tin (Sn)

Tin terminal finish provides a reliable electrical connection and corrosion resistance.

Maximum Power Dissipation: 0.1 W

Low power dissipation helps in energy efficiency and prevents overheating.

Nominal Light Current: 3.5 mA

High nominal light current ensures efficient light detection and signal output.

Maximum Dark Current: 100 nA

Low dark current minimizes noise and improves signal-to-noise ratio.

Infrared (IR) Range: YES

Presence of infrared range expands the range of applications, especially in remote control systems and security devices.

Maximum Response Time: 0.00001 s

Ultra-fast response time enables real-time detection and rapid signal processing.

Minimum Collector-emitter Breakdown Voltage: 30 V

High breakdown voltage ensures protection against voltage surges and spikes.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature enables secure and stable installation on PCBs and other electronic boards.

Technical Specifications

Phototransistors QSD724 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Additional Features:

HIGH SENSITIVITY, DAY LIGHT FILTER

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

3.5 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.1 W

Maximum Response Time:

.00001 s

Shape:

ROUND

Size:

4.675 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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