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QSD722

Onsemi

QSD722 by Onsemi

QSD722 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time of 6μs and collector-emitter breakdown voltage of 30V.

Median Price

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Lifecycle Status

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Digiode

USA . 1,740 parts In-Stock

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Vyrian

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Component Stockers USA

USA . 695 parts In-Stock

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TANS Electronics

Latvia . 3,901 parts In-Stock

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Kulean Microsystems

USA . 3,816 parts In-Stock

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SupplyDigital Components

Austria . 3,100 parts In-Stock

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Corphita

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Supply Digital

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Problanco Electronics

Mexico . 1,328 parts In-Stock

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UHIMA Technologies

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Corohmni

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Overview

Experience the superior quality of the Onsemi QSD722 phototransistor. As a trusted manufacturer in the industry, Onsemi delivers reliable and high-performing components for a variety of applications. The QSD722 offers unmatched value with its precise peak wavelength of 880nm and quick response time of 0.000006s, making it ideal for infrared sensing and communication systems. Trust Onsemi to provide top-notch components that exceed expectations.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies the setup and reduces complexity in the application.

Size: 4.675 mm

Compact size allows for easy integration into various devices or systems.

Peak Wavelength (nm): 880

Peak wavelength of 880nm indicates high sensitivity to specific light sources, making it ideal for targeted applications.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor design offers high efficiency in converting light into electrical signals.

Maximum Operating Temperature: 100 °C

High maximum operating temperature ensures reliable performance even in demanding environments.

Shape: ROUND

Round shape provides uniform light detection and easy alignment in applications.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in extreme cold conditions.

Terminal Finish: Tin (Sn)

Tin finish ensures good electrical conductivity and corrosion resistance.

Maximum Power Dissipation: 0.1 W

Low power dissipation helps in reducing energy consumption and heat generation in the system.

Nominal Light Current: 0.6 mA

High nominal light current indicates good sensitivity to light sources.

Maximum Dark Current: 100 nA

Low dark current helps in reducing noise and improving signal-to-noise ratio.

Infrared (IR) Range: YES

Infrared range compatibility allows for applications in IR sensing and communication.

Maximum Response Time: 0.000006 s

Ultra-fast response time enables quick detection and response to changes in light intensity.

Minimum Collector-emitter Breakdown Voltage: 30 V

High breakdown voltage ensures protection against voltage spikes and overloads.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting simplifies the installation process and provides a secure mechanical connection.

Technical Specifications

Phototransistors QSD722 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Additional Features:

HIGH SENSITIVITY, DAY LIGHT FILTER

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

.6 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.1 W

Maximum Response Time:

.000006 s

Shape:

ROUND

Size:

4.675 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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