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QSD723

Onsemi

QSD723 by Onsemi

The Onsemi QSD723 is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 30V. Ideal for optoelectronic applications requiring fast IR detection in compact spaces.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Digiode

USA . 2,504 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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Vyrian

USA . 271 parts In-Stock

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AZTECH Wire

Italy . 588 parts In-Stock

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Kepictronics

USA . 20,000 parts In-Stock

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SupplyDigital Components

Austria . 7,447 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

USA . 3,884 parts In-Stock

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Supply Digital

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Corphita

USA . 2,205 parts In-Stock

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Metaverse IC Inc.

Canada . 1,750 parts In-Stock

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TANS Electronics

Latvia . 1,331 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Corohmni

South Africa . 438 parts In-Stock

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UHIMA Technologies

Türkiye . 9 parts In-Stock

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Overview

Elevate your optical sensing capabilities with the QSD723 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their phototransistors. The QSD723 is perfect for a wide range of applications, from automotive to industrial settings. With its compact size and superior performance, this photo transistor offers customers unmatched value, efficiency, and precision. Experience the benefits of fast response times, high sensitivity, and exceptional durability with the QSD723, setting a new standard in optical sensing technology.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes the phototransistor easier to use and less complex in setup.

Size: 4.675 mm

Compact size allows for easy integration in various electronic devices or systems.

Peak Wavelength (nm): 880

Optimal peak wavelength for efficient light detection in the near-infrared spectrum.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor type ensures reliable and accurate light sensing capabilities.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for use in various environmental conditions.

Minimum Operating Temperature: -40 °C

Wide range of minimum operating temperature ensures functionality in cold environments as well.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good solderability and reliability in connections.

Maximum Power Dissipation: 0.1 W

Low power dissipation helps in energy efficiency and prevents overheating.

Nominal Light Current: 2.5 mA

High light current allows for sensitive light detection and accurate measurements.

Maximum Dark Current: 100 nA

Low dark current ensures minimal signal interference in low-light conditions.

Infrared (IR) Range: YES

Infrared range capability expands the range of applications where the phototransistor can be used.

Maximum Response Time: 0.000008 s

Fast response time allows for quick detection and reaction to changes in light levels.

Minimum Collector-emitter Breakdown Voltage: 30 V

High breakdown voltage ensures the reliability and durability of the phototransistor in various operating conditions.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides secure and stable installation in electronic circuits.

Technical Specifications

Phototransistors QSD723 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Additional Features:

HIGH SENSITIVITY, DAY LIGHT FILTER

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

2.5 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.1 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Size:

4.675 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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