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TIL607

Texas Instruments

TIL607 by Texas Instruments

TIL607 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for surface mount applications in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,166 parts In-Stock

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Digiode

USA . 1,024 parts In-Stock

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Parana Technologies

USA . 1,104 parts In-Stock

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$0.348

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$1.565

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$0.348

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$1.565

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DigiPath Technology Company

USA . 1,713 parts In-Stock

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$0.383

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$0.353

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IDEA Electronic Components Group

UK . 2,318 parts In-Stock

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$0.391

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$0.352

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ChromeModa Solutions

Germany . 102 parts In-Stock

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$0.391

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$0.321

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102

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Ampacity Inc.

Singapore . 953 parts In-Stock

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$11.100

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953

$11.100

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AZTECH Wire

Italy . 475 parts In-Stock

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$12.948

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One Stop Electronics

USA . 742 parts In-Stock

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$13.100

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Semicontronic

India . 1,263 parts In-Stock

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$15.100

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$14.722

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$14.647

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Corphita

USA . 4,179 parts In-Stock

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Corohmni

South Africa . 178 parts In-Stock

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Overview

Experience unparalleled quality and reliability with the TIL607 phototransistor by Texas Instruments. Perfect for a wide range of applications, this innovative product boasts a peak wavelength of 900nm and a maximum operating temperature of 125°C. With a fast response time and low power dissipation, the TIL607 is designed to deliver exceptional performance in any environment. Trust Texas Instruments to provide you with cutting-edge technology that exceeds your expectations. Elevate your projects with the TIL607 phototransistor today!

Feature Benefit Bullets

Peak Wavelength: 900 nm

This specific peak wavelength allows for accurate detection of light sources at that wavelength, making it ideal for applications requiring sensitivity to 900 nm light.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this phototransistor can withstand extreme heat conditions, ensuring reliability in various environments.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60 °C allows this phototransistor to function effectively in cold environments, making it versatile for different temperature conditions.

Maximum Power Dissipation: 0.05 W

The low maximum power dissipation of 0.05 W ensures that this phototransistor consumes minimal power while providing efficient performance, making it energy-efficient.

Maximum Dark Current: 25 nA

The low maximum dark current of 25 nA means that this phototransistor has minimal leakage current in the absence of light, resulting in accurate light detection and low noise operation.

Maximum Response Time: 0.000008 s

With an extremely fast maximum response time of 0.000008 s, this phototransistor provides rapid detection and response to changes in light intensity, suitable for high-speed applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature makes it easy to integrate this phototransistor into compact electronic devices and circuit boards, saving space and facilitating convenient assembly.

Technical Specifications

Phototransistors TIL607 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

25 nA

Mounting Feature:

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Sub-Category:

Photo Transistors

Trade Compliance

TIL607 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5961-01-023-7874, 5961010237874

NIIN

010237874

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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