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KDT00030

Onsemi

KDT00030 by Onsemi

The Onsemi KDT00030 is a single phototransistor with peak wavelength of 630nm. It operates b/w -40 °C to 85°C, with nominal light current of 0.01mA and max dark current of 100nA. Ideal for applications requiring rectangular shape optoelectronic components in compact size.

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Digiode

USA . 1,565 parts In-Stock

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Perfect Parts

USA . 27,318 parts In-Stock

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Kepictronics

USA . 20,000 parts In-Stock

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Kulean Microsystems

USA . 5,411 parts In-Stock

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SupplyDigital Components

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Corphita

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UHIMA Technologies

Türkiye . 849 parts In-Stock

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TANS Electronics

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Overview

Elevate your optoelectronic projects with the KDT00030 by Onsemi. As a leading manufacturer in the industry, Onsemi is known for its superior quality and reliability. The KDT00030 belongs to the phototransistor category, offering unmatched precision and performance. With a peak wavelength of 630nm, this rectangular-shaped photo transistor operates effortlessly in temperatures ranging from -40 °C to 85°C. Experience peace of mind knowing that the KDT00030 delivers a nominal light current of 0.01mA and a maximum dark current of only 100nA. Enhance your applications with the value and benefits that this exceptional product brings to the table.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easy integration and simple circuit design.

Size: 1.2 mm

Compact size enables versatile placement in various applications.

Peak Wavelength (nm): 630

Optimal peak wavelength for efficient light detection and response.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor type offers high sensitivity and reliability in light detection.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in diverse environmental conditions.

Shape: RECTANGULAR

Rectangular shape facilitates easy mounting and alignment in setups.

Minimum Operating Temperature: -40 °C

Suitable for operation in low-temperature environments without any performance issues.

Nominal Light Current: 0.01 mA

Provides accurate detection of light with a consistent current output.

Maximum Dark Current: 100 nA

Low dark current ensures minimal noise and accurate light sensing capabilities.

Technical Specifications

Phototransistors KDT00030 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

NO

Nominal Light Current:

.01 mA

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

630

Shape:

RECTANGULAR

Size:

1.2 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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