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1N5725

Texas Instruments

1N5725 by Texas Instruments

1N5725 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. Ideal for applications requiring fast response time and IR range detection in a through hole mount configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,181 parts In-Stock

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Digiode

USA . 211 parts In-Stock

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Parana Technologies

USA . 478 parts In-Stock

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$0.099

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$1.458

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478

$0.099

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ChromeModa Solutions

Germany . 3,688 parts In-Stock

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$0.111

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$0.091

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IDEA Electronic Components Group

UK . 1,387 parts In-Stock

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$0.111

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Native Components

USA . 719 parts In-Stock

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$0.161

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$0.155

719

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Northwest PG Solutions

USA . 1,222 parts In-Stock

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$0.177

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$0.156

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Semicontronic

India . 1,076 parts In-Stock

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$2.100

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$2.048

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$2.037

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Ampacity Inc.

Singapore . 972 parts In-Stock

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$3.100

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One Stop Electronics

USA . 1,417 parts In-Stock

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$8.100

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AZTECH Wire

Italy . 395 parts In-Stock

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$15.322

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Corphita

USA . 2,008 parts In-Stock

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DigiPath Technology Company

USA . 947 parts In-Stock

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Corohmni

South Africa . 189 parts In-Stock

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Overview

Elevate your optoelectronic projects with the 1N5725 from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and performance. This phototransistor boasts a peak wavelength of 900nm and a fast response time of 0.0000015s, making it perfect for applications requiring quick and precise light detection. With a nominal light current of 7mA and a low dark current of 25nA, this component offers reliability and efficiency that will elevate your designs to the next level. Trust Texas Instruments to deliver the best in optoelectronics.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into circuits and ensures consistent performance.

Peak Wavelength (nm): 900

Optimal peak wavelength for detecting light in the 900nm range, suitable for various applications.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor technology provides high sensitivity and fast response time for accurate light detection.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable performance in harsh environments.

Shape: ROUND

Round shape for easy mounting and alignment in various applications.

Minimum Operating Temperature: -60 °C

Wide range of operating temperatures ensures usability in both cold and hot environments.

Maximum Power Dissipation: 0.05 W

Low power dissipation helps in reducing energy consumption and heat generation.

Nominal Light Current: 7 mA

High light current ensures strong signal output for accurate light sensing.

Maximum Dark Current: 25 nA

Low dark current minimizes noise and improves the signal-to-noise ratio of the sensor.

Infrared (IR) Range: YES

Ability to detect infrared light extends the range of applications for the phototransistor.

Maximum Response Time: 0.0000015 s

Ultra-fast response time enables quick detection of light changes for prompt reactions.

Minimum Collector-emitter Breakdown Voltage: 50 V

High breakdown voltage ensures the phototransistor can withstand high voltage spikes.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature allows for secure and stable installation on circuit boards.

Technical Specifications

Phototransistors 1N5725 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

7 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.0000015 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

1N5725 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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