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1N5724

Texas Instruments

1N5724 by Texas Instruments

1N5724 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. Ideal for applications requiring fast response times and IR detection in through-hole mounting setups.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 8,418 parts In-Stock

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Digiode

USA . 2,158 parts In-Stock

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Parana Technologies

USA . 1,388 parts In-Stock

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$0.144

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$1.489

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DigiPath Technology Company

USA . 1,872 parts In-Stock

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$0.159

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$0.146

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ChromeModa Solutions

Germany . 3,367 parts In-Stock

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$0.162

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IDEA Electronic Components Group

UK . 473 parts In-Stock

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Ampacity Inc.

Singapore . 1,408 parts In-Stock

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One Stop Electronics

USA . 1,561 parts In-Stock

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AZTECH Wire

Italy . 528 parts In-Stock

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Semicontronic

India . 523 parts In-Stock

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Corphita

USA . 4,568 parts In-Stock

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Northwest PG Solutions

USA . 707 parts In-Stock

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Corohmni

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Overview

Enhance your optoelectronic applications with the Texas Instruments 1N5724 phototransistor. Manufactured by a reputable company known for quality and innovation, this single configuration component offers peak performance at a maximum power dissipation of 0.05W. With a wide operating temperature range from -60°C to 125°C, this round-shaped phototransistor provides reliable sensing in various environments. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations. Elevate your designs with the 1N5724 and experience unmatched value and precision.

Feature Benefit Bullets

Peak Wavelength (nm): 900

This specific peak wavelength of 900nm makes this phototransistor suitable for applications requiring detection and sensing in the infrared spectrum.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this phototransistor can withstand elevated temperatures without affecting its performance, making it versatile for various environments.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C allows this phototransistor to function effectively in cold temperature conditions, enhancing its usability in different climates.

Maximum Power Dissipation: 0.05 W

The low maximum power dissipation of 0.05W indicates that this phototransistor is energy-efficient and can operate without excessive heat buildup, ensuring long-term reliability.

Nominal Light Current: 4 mA

With a nominal light current of 4mA, this phototransistor can efficiently convert light signals into electrical current, making it suitable for light detection and sensing applications.

Infrared (IR) Range: YES

The inclusion of an Infrared (IR) range means this phototransistor can detect and respond to infrared light, expanding its applicability in various infrared sensing and communication systems.

Maximum Response Time: 0.0000015 s

The fast maximum response time of 0.0000015 seconds enables this phototransistor to swiftly react to light changes, enhancing its performance in real-time sensing and detection applications.

Minimum Collector-emitter Breakdown Voltage: 50 V

With a minimum collector-emitter breakdown voltage of 50V, this phototransistor offers reliable electrical insulation and protection, ensuring safe and efficient operation within specified voltage limits.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation and secure placement of this phototransistor onto circuit boards or other components, facilitating convenient integration into various electronic systems.

Technical Specifications

Phototransistors 1N5724 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

4 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.0000015 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

1N5724 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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