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TIL414

Texas Instruments

TIL414 by Texas Instruments

TIL414 by Texas Instruments is a phototransistor with peak wavelength of 930nm. It operates b/w -40°C to 85°C, dissipating max power of 0.05W. With fast response time of 0.000008s, it's ideal for applications requiring through hole mounting and low dark current at 50nA.

Median Price

$24.500

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 2 parts In-Stock

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$24.500

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2

$24.500

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Vyrian

USA . 5,491 parts In-Stock

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5,491

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Digiode

USA . 1,029 parts In-Stock

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1,029

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First Choice Components Inc.

USA . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 786 parts In-Stock

1+ parts

$0.593

100+ parts

-

1k+ parts

$1.676

10k+ parts

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786

$0.593

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$1.676

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DigiPath Technology Company

USA . 2,199 parts In-Stock

1+ parts

$0.653

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2,199

$0.653

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ChromeModa Solutions

Germany . 1,879 parts In-Stock

1+ parts

$0.666

100+ parts

$0.546

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1,879

$0.666

$0.546

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IDEA Electronic Components Group

UK . 1,752 parts In-Stock

1+ parts

$0.666

100+ parts

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1k+ parts

$0.599

10k+ parts

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1,752

$0.666

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$0.599

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One Stop Electronics

USA . 1,029 parts In-Stock

1+ parts

$13.100

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1,029

$13.100

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AZTECH Wire

Italy . 628 parts In-Stock

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$13.490

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628

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Corphita

USA . 3,863 parts In-Stock

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3,863

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Overview

Enhance your projects with the TIL414 phototransistor by Texas Instruments, a high-quality component designed to deliver reliable performance in a variety of applications. With its peak wavelength of 930nm and impressive temperature range, this phototransistor is perfect for tasks requiring precision and durability. From robotics to sensor applications, the TIL414 offers unmatched value and benefits to customers seeking top-notch components for their projects. Trust Texas Instruments for superior technology that exceeds expectations.

Feature Benefit Bullets

Peak Wavelength: 930 nm

This specific peak wavelength allows for accurate detection and sensing in the near-infrared region, making it suitable for various applications such as remote controls and optical switches.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this phototransistor can withstand challenging environmental conditions without compromising performance, ensuring reliability in diverse temperature settings.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature capability enables this product to function effectively in cold environments, extending its usability to a wider range of applications.

Maximum Power Dissipation: 0.05 W

The low power dissipation value indicates energy efficiency and helps in reducing heat generation, making this phototransistor suitable for compact designs and applications where power consumption is critical.

Maximum Dark Current: 50 nA

The low dark current value ensures minimal noise and accurate signal detection in low-light conditions, making this phototransistor ideal for applications requiring high sensitivity and precision.

Maximum Response Time: 0.000008 s

The fast response time of this phototransistor ensures quick detection and signal processing, making it suitable for high-speed applications where rapid data acquisition is essential.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides secure mechanical support, making it convenient for PCB assembly and ensuring reliable connections in various electronic devices.

Maximum On State Current: 0.0001 A

The low on-state current allows for efficient power consumption during operation, minimizing energy loss and maximizing battery life in battery-powered applications, making this phototransistor an energy-efficient choice.

Technical Specifications

Phototransistors TIL414 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Maximum Dark Current:

50 nA

Mounting Feature:

Maximum On State Current:

.0001 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Peak Wavelength (nm):

930

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Sub-Category:

Photo Transistors

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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