Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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QSE114 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR range detection in a compact 1.65mm round shape through hole mount package.
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Having a single configuration simplifies the setup and makes it easier to integrate into various systems.
Compact size allows for easy placement and installation in tight spaces.
Optimal peak wavelength ensures efficient performance in capturing light at the specified range.
Phototransistors are known for their high sensitivity and reliability in detecting light signals.
High maximum operating temperature allows for reliable performance in a variety of environments.
Round shape provides uniform sensitivity and coverage for light detection.
Low minimum operating temperature ensures functionality in cold conditions.
Tin terminal finish enhances the product's durability and conductivity.
Low power dissipation helps in energy efficiency and prevents overheating.
High light current sensitivity enables accurate detection of light signals.
Low dark current ensures minimal signal noise and interference in low-light conditions.
Infrared range compatibility allows for versatile light detection in different spectrums.
Ultra-fast response time ensures quick and precise detection of light changes.
High breakdown voltage protects the device from electrical surges and voltage spikes.
Through hole mounting simplifies installation and provides secure placement in various applications.
Phototransistors QSE114 attributes and parameters. Explore more Phototransistors devices from Onsemi
Additional Features:
Minimum Collector-emitter Breakdown Voltage:
Configuration:
Maximum Dark Current:
Infrared (IR) Range:
JESD-609 Code:
Nominal Light Current:
Mounting Feature:
No. of Functions:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Maximum Power Dissipation:
Maximum Response Time:
Shape:
Size:
Sub-Category:
Terminal Finish:
QSE114 Optoelectronics trade compliance attributes, and parameters.
HTS
8541.40.70.80
SB
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LM358N
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BSS138
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
1N4148
Microchip Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99WT1G
Onsemi
BAV99WT1G by Onsemi is a series connected diode with 0.006 us reverse recovery time. It is a small outline rectifier diode with 70V peak reverse voltage, ideal for surface mount applications in electronics requiring fast switching and low forward voltage drop.
MS3V-T1R32.768KHZ+/-20PPM12.5PF
Golledge Electronics
MS3V-T1R32.768KHZ+/-20PPM12.5PF by Golledge Electronics is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 12.5 pF load capacitance. It is ideal for applications requiring precise timing in temperature-sensitive environments due to its -40 to 85 °C operating range.
Yangzhou Yangjie Electronics
Nte Electronics
BAV99LT1G
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
Texas Instruments
LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.
LM7805CT
LM7805CT by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a dropout voltage of 2V, and offers excellent line/load regulation for various electronic applications.
2N2222A
Silicon Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
LM317T
Tt Electronics Plc
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Qualification Status: Not Qualified; JESD-30 Code: R-PSFM-T3;
SS14
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRG0805F10K
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
Central Semiconductor
LM78L05ACMX/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
M24308/2-1F
TE Connectivity
TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.
LM358M
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
TIED458
TIED458 by Texas Instruments is a phototransistor with peak wavelength of 820nm, max temp of 85°C, and response time of 0.00000001s. Ideal for applications requiring precise light detection in environments ranging from -40°C to 85°C.
SFH300-4
Infineon Technologies
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Maximum Dark Current: 100 nA; JESD-609 Code: e0;
BPX43-5
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880;
TPS612
Toshiba
PHOTO TRANSISTOR; Nominal Light Current: .014 mA; Minimum Operating Temperature: -20 Cel; Size: 3 mm; Maximum Dark Current: 100 nA; Minimum Collector-emitter Breakdown Voltage: 20 V;
TIL65
TIL65 by Texas Instruments is a phototransistor with peak wavelength of 820nm. It has max operating temp of 85°C and min of -40°C. With features like 0.05W power dissipation, it's ideal for applications requiring fast response time such as light sensing in industrial automation.
TPS613
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: NO; No. of Functions: 1; Maximum Operating Temperature: 75 Cel; Size: 3 mm;
QSE113E3R0
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Nominal Light Current: .25 mA; Infrared (IR) Range: YES;
FLD00030
The Onsemi FLD00030 is a single phototransistor with peak wavelength of 630nm. It operates b/w -40 °C to 85°C, with collector-emitter breakdown voltage of 6V. Ideal for light sensing applications due to its nominal light current of 1.1mA and low dark current of 100nA.
VEMT4700F-GS08
Vishay Intertechnology
Vishay Intertechnology's VEMT4700F-GS08 is a 2.4mm single phototransistor with peak wavelength of 940nm. It operates b/w -40 to 100°C, has max power dissipation of 0.1W, and collector-emitter breakdown voltage of 70V. Ideal for IR applications with surface mounting feature.
SFH3710-3/4
Osram Opto Semiconductors
Osram Opto SFH3710-3/4 is a single phototransistor with peak wavelength of 570nm. It operates b/w -40 to 85°C, with max on-state current of 0.02A. Ideal for surface mount applications requiring light sensing in the range of 0.004mA to 50nA dark current.
QTLP610CPD
The Onsemi QTLP610CPD is a single phototransistor with peak wavelength of 860nm. It operates b/w -25 °C to 85°C, with min collector-emitter breakdown voltage of 30V. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2mm.
QSD123
Qt Optoelectronics
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000008 s; Size: 5 mm; Maximum Dark Current: 100 nA;
QSD124A4R0
The Onsemi QSD124A4R0 is a 5mm phototransistor with peak wavelength of 880nm. It operates b/w -40°C to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring IR detection in through-hole mounting configurations.
SFH309P4
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000007 s; Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0;
ASDL-6270-D22
Broadcom
PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Infrared (IR) Range: YES; No. of Functions: 1; Configuration: SINGLE; JESD-609 Code: e3;
SD1440-002L
Micro Switch
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000015 s; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .075 W;
SFH3401-1
Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 10 nA;
SFH325
SFH325 by Infineon Technologies is a single phototransistor with peak wavelength of 860nm. It operates b/w -40 to 100°C, has Tin/Lead terminal finish, and can handle max power dissipation of 0.165W. Ideal for applications requiring IR detection in compact spaces due to its small size of 2.4mm and surface mounting feature.
SFH309FA-3/4
SFH309FA-3/4 by Osram Opto Semiconductors is a single phototransistor with peak wavelength of 900nm. It operates b/w -40 to 100°C, with max power dissipation of 0.165W. Ideal for applications requiring IR detection and radial mounting, it has a collector-emitter breakdown voltage of 35V and on-state current of 0.015A.
PH110
Nec Electronics America
PHOTO TRANSISTOR; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .4 mA; Maximum Dark Current: 100 nA; Infrared (IR) Range: YES; JESD-609 Code: e0;
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QSE113
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Peak Wavelength (nm): 880; No. of Functions: 1; Maximum Operating Temperature: 100 Cel;
QSE113 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time and collector-emitter breakdown voltage of 30V.
QSE113 by Qt Optoelectronics is a single configuration phototransistor with a size of 0.062 mm. It operates in temperatures ranging from -40 to 100 °C and has a max power dissipation of 0.1 W. It is commonly used in applications requiring infrared detection and has a fast response time of 0.000008 s.
QSE114
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Size: .062 mm; Maximum Power Dissipation: .1 W;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1; Peak Wavelength (nm): 880;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; JESD-609 Code: e3; Maximum Power Dissipation: .1 W;
QSE122
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Power Dissipation: .1 W; JESD-609 Code: e3; Maximum Operating Temperature: 100 Cel;
QSE133
PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Power Dissipation: .1 W; Shape: ROUND; Maximum Operating Temperature: 100 Cel;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000008 s; No. of Functions: 1; Infrared (IR) Range: YES;
QSE123
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; No. of Functions: 1; Maximum Power Dissipation: .1 W;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3; Size: 1.65 mm; Maximum Response Time: .000008 s;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000008 s; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;
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