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QSE122

Onsemi

QSE122 by Onsemi

QSE122 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W. Ideal for applications requiring IR detection due to its fast response time and collector-emitter breakdown voltage of 30V.

Median Price

$1.210

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,775 parts In-Stock

1+ parts

$1.210

100+ parts

$0.637

1k+ parts

$0.508

10k+ parts

$0.434

1,775

$1.210

$0.637

$0.508

$0.434

Mouser Electronics

USA . 970 parts In-Stock

1+ parts

$1.210

100+ parts

$0.637

1k+ parts

$0.455

10k+ parts

$0.424

970

$1.210

$0.637

$0.455

$0.424

Future Electronics

Canada . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.255

10k+ parts

$0.245

2,000

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-

$0.255

$0.245

Distributors (In-Stock)

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Vyrian

USA . 2,742 parts In-Stock

1+ parts

$0.467

100+ parts

-

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2,742

$0.467

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Digiode

USA . 2,257 parts In-Stock

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$1.302

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2,257

$1.302

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IBS Electronics

USA . 2,000 parts In-Stock

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$0.358

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$0.358

2,000

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$0.358

$0.358

Flip Electronics

USA . 1,500 parts In-Stock

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1,500

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NAC Semi

USA . 1,000 parts In-Stock

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$0.473

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1,000

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$0.473

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 2,084 parts In-Stock

1+ parts

$1.140

100+ parts

$0.530

1k+ parts

$0.400

10k+ parts

-

2,084

$1.140

$0.530

$0.400

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Corphita

USA . 1,038 parts In-Stock

1+ parts

$1.233

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1,038

$1.233

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Corohmni

South Africa . 53 parts In-Stock

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$1.370

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53

$1.370

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Kepictronics

USA . 20,000 parts In-Stock

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Problanco Electronics

Mexico . 7,866 parts In-Stock

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Kulean Microsystems

USA . 4,570 parts In-Stock

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4,570

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Supply Digital

USA . 2,897 parts In-Stock

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Perfect Parts

USA . 1,789 parts In-Stock

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1,789

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SupplyDigital Components

Austria . 963 parts In-Stock

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963

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TANS Electronics

Latvia . 662 parts In-Stock

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UHIMA Technologies

Türkiye . 347 parts In-Stock

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347

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Overview

Discover the innovative QSE122 phototransistor by Onsemi, a cutting-edge product that offers exceptional quality and performance. Designed with precision by a trusted manufacturer, this phototransistor is perfect for a wide range of applications, providing reliability and accuracy in every use. With its compact size and impressive peak wavelength of 880nm, the QSE122 delivers unmatched value and benefits to customers seeking superior optoelectronic solutions. Experience the advantages of this product today and elevate your projects to new heights of success.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to use and integrate in various applications.

Size: 1.65 mm

Compact size allows for space-saving designs and flexibility in placement.

Peak Wavelength (nm): 880

Optimal peak wavelength for efficient photo detection in the near infrared spectrum.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor type offers high sensitivity and accurate detection of light levels.

Maximum Operating Temperature: 100 °C

High maximum operating temperature ensures reliability in various environmental conditions.

Shape: ROUND

Round shape allows for easy mounting and alignment.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance.

Maximum Power Dissipation: 0.1 W

High maximum power dissipation allows for handling of high-power signals without damage.

Nominal Light Current: 3 mA

High nominal light current ensures reliable and stable performance in various lighting conditions.

Maximum Dark Current: 100 nA

Low maximum dark current ensures accurate detection of light and minimizes false signals.

Infrared (IR) Range: YES

Infrared sensitivity allows for detection of invisible infrared light, expanding the range of applications.

Maximum Response Time: 0.000008 s

Fast response time enables quick detection and response to changes in light levels.

Minimum Collector-emitter Breakdown Voltage: 30 V

High minimum breakdown voltage ensures protection against voltage spikes and overloads.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable installation on PCBs or other surfaces.

Technical Specifications

Phototransistors QSE122 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Additional Features:

SIDE LOOKER

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

3 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.1 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Size:

1.65 mm

Sub-Category:

Photo Transistors

Terminal Finish:

TIN

Trade Compliance

QSE122 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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