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QSE113

Onsemi

QSE113 by Onsemi

QSE113 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time and collector-emitter breakdown voltage of 30V.

Median Price

$0.632

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 853 parts In-Stock

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$0.841

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$0.313

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$0.296

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853

$0.841

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$0.296

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DigiKey

USA . 715 parts In-Stock

1+ parts

$0.900

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$0.462

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$0.364

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$0.306

715

$0.900

$0.462

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$0.306

Mouser Electronics

USA . 4,670 parts In-Stock

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$0.920

100+ parts

$0.472

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$0.342

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$0.302

4,670

$0.920

$0.472

$0.342

$0.302

Newark

USA . 10,236 parts In-Stock

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$0.962

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$0.524

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$0.425

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$0.368

10,236

$0.962

$0.524

$0.425

$0.368

Element14

Singapore . 7,524 parts In-Stock

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$1.510

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$0.620

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$0.490

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7,524

$1.510

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$0.490

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RS (Exports)

UK . 1,090 parts In-Stock

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$0.424

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Chip1Stop

Japan . 584 parts In-Stock

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$0.383

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$0.322

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584

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Arrow

USA . 500 parts In-Stock

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$0.267

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Verical

USA . 500 parts In-Stock

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$0.267

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500

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$0.267

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Rochester

USA . 227 parts In-Stock

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$0.345

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$0.287

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$0.256

227

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$0.256

Distributors (In-Stock)

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Digiode

USA . 1,262 parts In-Stock

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$0.269

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$0.269

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Nova Conductors

Japan . 50 parts In-Stock

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$0.328

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50

$0.328

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TME

Poland . 2 parts In-Stock

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$0.870

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$0.418

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$0.386

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2

$0.870

$0.418

$0.386

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Flip Electronics

USA . 43,500 parts In-Stock

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ComSIT Distribution GmbH

Germany . 42,500 parts In-Stock

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ComSIT USA

USA . 42,500 parts In-Stock

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Chip Stock

USA . 21,500 parts In-Stock

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IBS Electronics

USA . 5,500 parts In-Stock

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$0.260

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$0.246

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$0.260

$0.246

Rebound Electronics

UK . 4,500 parts In-Stock

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NAC Semi

USA . 4,500 parts In-Stock

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$0.333

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$0.308

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$0.333

$0.308

Vyrian

USA . 2,957 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2,000 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 2,186 parts In-Stock

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$0.183

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$0.178

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$0.178

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2,186

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$0.178

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Corohmni

South Africa . 313 parts In-Stock

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$0.220

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Corphita

USA . 2,716 parts In-Stock

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$0.255

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Continental Prestige Electronics

USA . 3,726 parts In-Stock

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$0.328

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$0.321

3,726

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Argo Parts USA

USA . 907 parts In-Stock

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$0.328

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$0.318

907

$0.328

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Netroflash

USA . 500 parts In-Stock

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$0.328

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$0.328

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Aztec Data Supply Inc.

USA . 3,744 parts In-Stock

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$0.341

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Perfect Parts

USA . 68,206 parts In-Stock

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Metaverse IC Inc.

Canada . 63,945 parts In-Stock

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Eastek

USA . 9,500 parts In-Stock

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SupplyDigital Components

Austria . 7,696 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,444 parts In-Stock

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Kulean Microsystems

USA . 5,939 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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TANS Electronics

Latvia . 3,017 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 915 parts In-Stock

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UHIMA Technologies

Türkiye . 588 parts In-Stock

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Supply Digital

USA . 138 parts In-Stock

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Overview

Enhance your product designs with the high-quality QSE113 phototransistor by Onsemi. With a peak wavelength of 880nm and a fast response time of 0.000008s, this single configuration device offers superior performance in various applications. From proximity sensors to light barriers, the QSE113 provides reliable and precise detection capabilities. Trust Onsemi's expertise in optoelectronic technology to deliver exceptional value and benefits to your projects. Upgrade your designs today with the QSE113 phototransistor and experience the advantages of top-notch quality and performance.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies the setup and usage of the phototransistor, making it easy to integrate into electronic circuits.

Size: 1.65 mm

Compact size allows for easy placement and integration into small electronic devices or projects.

Peak Wavelength (nm): 880

Peak wavelength of 880 nm makes this phototransistor ideal for applications in the infrared range, providing accurate sensing and detection capabilities.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor type ensures high sensitivity to light, making it suitable for light sensing applications.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for reliable performance even in demanding environmental conditions.

Shape: ROUND

Round shape facilitates easy mounting and alignment during assembly.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring stable electrical connections.

Maximum Power Dissipation: 0.1 W

Low power dissipation helps in efficient energy usage and prevents overheating in the circuit.

Nominal Light Current: 0.25 mA

Nominal light current value ensures accurate and consistent response to varying light levels.

Maximum Dark Current: 100 nA

Low dark current minimizes noise in the signal, leading to precise light detection.

Infrared (IR) Range: YES

Infrared range capability expands the range of applications for the phototransistor, including remote controls, security systems, and more.

Maximum Response Time: 0.000008 s

Fast response time enables quick detection and processing of light signals, critical for time-sensitive applications.

Minimum Collector-emitter Breakdown Voltage: 30 V

High breakdown voltage ensures robustness and protection against voltage spikes, enhancing the reliability of the phototransistor.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable placement of the phototransistor on the circuit board, preventing displacement during operation.

Technical Specifications

Phototransistors QSE113 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Additional Features:

HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

.25 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.1 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Size:

1.65 mm

Sub-Category:

Photo Transistors

Terminal Finish:

TIN

Trade Compliance

QSE113 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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