Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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QSE113 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time and collector-emitter breakdown voltage of 30V.
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Single configuration simplifies the setup and usage of the phototransistor, making it easy to integrate into electronic circuits.
Compact size allows for easy placement and integration into small electronic devices or projects.
Peak wavelength of 880 nm makes this phototransistor ideal for applications in the infrared range, providing accurate sensing and detection capabilities.
Phototransistor type ensures high sensitivity to light, making it suitable for light sensing applications.
High maximum operating temperature allows for reliable performance even in demanding environmental conditions.
Round shape facilitates easy mounting and alignment during assembly.
Tin terminal finish provides good conductivity and corrosion resistance, ensuring stable electrical connections.
Low power dissipation helps in efficient energy usage and prevents overheating in the circuit.
Nominal light current value ensures accurate and consistent response to varying light levels.
Low dark current minimizes noise in the signal, leading to precise light detection.
Infrared range capability expands the range of applications for the phototransistor, including remote controls, security systems, and more.
Fast response time enables quick detection and processing of light signals, critical for time-sensitive applications.
High breakdown voltage ensures robustness and protection against voltage spikes, enhancing the reliability of the phototransistor.
Through hole mounting feature provides secure and stable placement of the phototransistor on the circuit board, preventing displacement during operation.
Phototransistors QSE113 attributes and parameters. Explore more Phototransistors devices from Onsemi
Additional Features:
Minimum Collector-emitter Breakdown Voltage:
Configuration:
Maximum Dark Current:
Infrared (IR) Range:
JESD-609 Code:
Nominal Light Current:
Mounting Feature:
No. of Functions:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Maximum Power Dissipation:
Maximum Response Time:
Shape:
Size:
Sub-Category:
Terminal Finish:
QSE113 Optoelectronics trade compliance attributes, and parameters.
HTS
8541.40.70.80
SB
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N7002
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;
LM317LMX/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Seated Height: 1.75 mm; Nominal Dropout Voltage-1: 3 V;
LL4148
Panjit International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358N
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
BSS138LT3G
Onsemi
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
SMMBT2222ALT1G
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
SMBJ18CA
Jiangsu Jiejie Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2003ADR
Texas Instruments
ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.
LM317AEMP/NOPB
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: SOP; Terminal Form: GULL WING; Qualification Status: Not Qualified; Width: 3.56 mm;
Micro Commercial Components
2N2222A
North American Philips Discrete Products Div
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
B340A-13-F
Diodes Incorporated
B340A-13-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 3A max output current, and 0.5V max forward voltage. It is used for efficiency applications in electronics due to its small outline package and high operating temperature range of -55°C to 150°C.
Dc Components
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
STM32H753BIT6
STMicroelectronics
STM32H753BIT6 by STMicroelectronics is a 32-bit microcontroller with 208 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and extensive peripherals for industrial applications like CAN, Ethernet, and USB connectivity. With a wide temperature range of -40 to +85 °C, it's ideal for demanding environments requiring high-speed processing capabilities.
BAV99
Secos
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Transys Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;
Surge Components
TPS626(C)
Toshiba
PHOTO DARLINGTON; Shape: ROUND; Size: 1.5 mm; No. of Functions: 1; Minimum Operating Temperature: -25 Cel; Additional Features: HIGH SENSITIVITY; SIDE VIEW;
SPS281C
SPS281C by Onsemi is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It has max power dissipation of 0.05W and response time of 0.00003s. Ideal for applications requiring optoelectronic sensing in temperatures ranging from -25 °C to 80°C.
TIL63
TIL63 by Texas Instruments is a phototransistor with peak wavelength of 820nm. It operates b/w -40°C to 85°C, dissipating up to 0.05W power. With a response time of 0.000008s, it's ideal for applications requiring precise light detection in various environments.
SFH310
Infineon Technologies
SFH310 by Infineon Technologies is a phototransistor with peak wavelength of 780nm. It can operate b/w -55°C to 100°C, with max power dissipation of 0.165W and dark current of 5nA. Ideal for applications requiring fast response time (0.000007s) and on-state current up to 0.05A, featuring through-hole mounting.
TPS616
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Shape: ROUND; Nominal Light Current: .01 mA; Minimum Operating Temperature: -30 Cel;
TPS616(AB,F)
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; No. of Functions: 1; Maximum Operating Temperature: 85 Cel; Maximum On State Current: .02 A;
SDP8406-003
Honeywell Sensing And Control
SDP8406-003 by Honeywell is a single phototransistor with max temp of 85°C and min temp of -40°C. It has a nominal light current of 3.4mA, dark current of 100nA, and response time of 0.000015s. With a collector-emitter breakdown voltage of 30V, it is ideal for optoelectronic applications requiring precise light detection.
SD2440-002
Micro Switch
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .125 W; Maximum Response Time: .000015 s;
BP103BF2
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Minimum Operating Temperature: -55 Cel; Maximum Response Time: .0000075 s;
2N5777
2N5777 by Motorola is a single phototransistor with peak wavelength of 800nm. It features PHOTO DARLINGTON optoelectronic type, Tin/Lead terminal finish, and 4mA nominal light current. Ideal for applications requiring IR detection with min collector-emitter breakdown voltage of 25V and low dark current of 100nA.
SFH303FA-3
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Response Time: .000013 s; Configuration: SINGLE;
BPX43-4
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum On State Current: .05 A;
SD2440-004
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Response Time: .000015 s; Maximum Operating Temperature: 125 Cel;
TIL180
Photo Transistors; Maximum Response Time: .000125 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 70 Cel; Maximum On State Current: .0001 A; Maximum Power Dissipation: .09 W;
SD5410-002
SD5410-002 by Honeywell Sensing And Control is a PHOTO DARLINGTON phototransistor with a max operating temperature of 125°C and a min operating temperature of -55°C. It has a max power dissipation of 0.15W and a max dark current of 250nA. This through-hole mount component is commonly used in optoelectronic applications.
TPS601A(B,F)
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: YES; Peak Wavelength (nm): 800; Nominal Light Current: .2 mA; Maximum On State Current: .05 A;
OP804SL
Tt Electronics Plc
OP804SL by Tt Electronics Plc is a single configuration phototransistor with a max operating temperature of 125°C. It has a nominal light current of 7mA and min collector-emitter breakdown voltage of 30V. Ideal for applications requiring infrared detection in environments ranging from -65°C to 125°C.
TEFT4300
Temic Semiconductors
PHOTO TRANSISTOR; Size: 3 mm; Configuration: SINGLE; Shape: ROUND; Infrared (IR) Range: YES; Maximum Dark Current: 200 nA;
TPS606(LB)-B
PHOTO TRANSISTOR; Configuration: SINGLE; Shape: ROUND; Nominal Light Current: .01 mA; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 20 V;
SFH309FA-5
SFH309FA-5 by Infineon Technologies is a phototransistor with peak wavelength of 900nm. It has a max operating temperature of 100°C and min of -55°C. Ideal for applications requiring fast response time, such as optical sensors and light barriers.
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QSE113
Fairchild Semiconductor
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Peak Wavelength (nm): 880; No. of Functions: 1; Maximum Operating Temperature: 100 Cel;
Qt Optoelectronics
QSE113 by Qt Optoelectronics is a single configuration phototransistor with a size of 0.062 mm. It operates in temperatures ranging from -40 to 100 °C and has a max power dissipation of 0.1 W. It is commonly used in applications requiring infrared detection and has a fast response time of 0.000008 s.
QSE114
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Size: .062 mm; Maximum Power Dissipation: .1 W;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1; Peak Wavelength (nm): 880;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; JESD-609 Code: e3; Maximum Response Time: .000008 s;
QSE113E3R0
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Nominal Light Current: .25 mA; Infrared (IR) Range: YES;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; JESD-609 Code: e3; Maximum Power Dissipation: .1 W;
QSE122
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Power Dissipation: .1 W; JESD-609 Code: e3; Maximum Operating Temperature: 100 Cel;
QSE133
PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Power Dissipation: .1 W; Shape: ROUND; Maximum Operating Temperature: 100 Cel;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000008 s; No. of Functions: 1; Infrared (IR) Range: YES;
QSE123
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; No. of Functions: 1; Maximum Power Dissipation: .1 W;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3; Size: 1.65 mm; Maximum Response Time: .000008 s;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000008 s; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;
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