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QSB363

Onsemi

QSB363 by Onsemi

QSB363 by Onsemi is a single configuration phototransistor with a size of 1.9 mm. It operates at temperatures ranging from -25 to 85 °C and has a peak wavelength of 940 nm. It is commonly used in applications requiring infrared sensing or detection.

Median Price

$0.412

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,927 parts In-Stock

1+ parts

$0.620

100+ parts

$0.304

1k+ parts

$0.233

10k+ parts

$0.182

3,927

$0.620

$0.304

$0.233

$0.182

Flip Electronics (Authorized)

USA . 40,000 parts In-Stock

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Rochester

USA . 7 parts In-Stock

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$0.203

1k+ parts

$0.169

10k+ parts

$0.150

7

-

$0.203

$0.169

$0.150

Distributors (In-Stock)

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Digiode

USA . 1,986 parts In-Stock

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$0.158

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1,986

$0.158

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Flip Electronics

USA . 40,000 parts In-Stock

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40,000

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Vyrian

USA . 11,020 parts In-Stock

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EMSNET

USA . 2,000 parts In-Stock

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Nova Conductors

Japan . 45 parts In-Stock

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Corphita

USA . 1,717 parts In-Stock

1+ parts

$0.149

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1,717

$0.149

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Corohmni

South Africa . 436 parts In-Stock

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$0.166

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436

$0.166

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Aztec Data Supply Inc.

USA . 3,393 parts In-Stock

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$0.746

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3,393

$0.746

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Andel Nordic

Denmark . 681 parts In-Stock

1+ parts

$3.624

100+ parts

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$3.479

10k+ parts

$3.479

681

$3.624

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$3.479

$3.479

Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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Perfect Parts

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A-Z Elektronik GmbH

Germany . 14,469 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 7,732 parts In-Stock

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Continental Prestige Electronics

USA . 6,361 parts In-Stock

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TANS Electronics

Latvia . 5,902 parts In-Stock

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Problanco Electronics

Mexico . 5,315 parts In-Stock

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Argo Parts USA

USA . 5,132 parts In-Stock

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Kulean Microsystems

USA . 5,122 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

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UHIMA Technologies

Türkiye . 590 parts In-Stock

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Aranea Global

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Overview

Introducing the QSB363 by Onsemi, a high-quality phototransistor that is set to revolutionize your optoelectronic applications. With its compact size of 1.9 mm and peak wavelength of 940 nm, this single configuration device offers unbeatable performance in a wide range of industries. Whether it's for automation, security systems, or sensing applications, the QSB363 guarantees accurate and reliable results. Experience the benefits of its matte tin terminal finish, ensuring long-lasting durability even in harsh environments. With a maximum power dissipation of 0.1 W and nominal light current of 1.5 mA, this phototransistor provides exceptional value and versatility. Trust in Onsemi's expertise and choose the QSB363 for all your optoelectronic needs.

Feature Benefit Bullets

Configuration: SINGLE:

This phototransistor has a single configuration, making it easy to use and integrate into various applications.

Size: 1.9 mm:

With a compact size of 1.9 mm, this phototransistor can be easily installed in small spaces, making it versatile for different design requirements.

No. of Functions: 1:

With a single function, this phototransistor simplifies circuitry and saves space, enhancing overall design efficiency.

Peak Wavelength (nm): 940:

The peak wavelength of 940 nm ensures efficient detection and response to infrared light, making it ideal for applications such as remote control systems or proximity sensors.

Optoelectronic Type: PHOTO TRANSISTOR:

Being a phototransistor, this product offers high sensitivity and excellent response in converting light into electrical signals, providing accurate detection capabilities.

Maximum Operating Temperature: 85 °C:

With a maximum operating temperature of 85°C, this phototransistor can withstand higher temperature environments, ensuring reliability and stability in various applications.

Shape: ROUND:

The round shape of this phototransistor allows for easy integration into designs with circular mounting holes or spaces, providing flexibility in implementation.

Minimum Operating Temperature: -25 °C:

With a minimum operating temperature of -25°C, this phototransistor can operate in colder conditions, expanding its usability in different environments.

Terminal Finish: MATTE TIN:

The matte tin terminal finish offers excellent solderability and corrosion resistance, ensuring reliable connections and long-term performance.

Maximum Power Dissipation: 0.1 W:

With a maximum power dissipation of 0.1 W, this phototransistor can handle higher power levels, making it suitable for applications requiring higher performance.

Nominal Light Current: 1.5 mA:

The nominal light current of 1.5 mA indicates the phototransistor's sensitivity to light, allowing precise and accurate detection in various sensing applications.

Maximum Dark Current: 100 nA:

With a low maximum dark current of 100 nA, this phototransistor minimizes background noise and maintains a high signal-to-noise ratio, enhancing its reliability.

Infrared (IR) Range: YES:

Featuring an infrared (IR) range, this phototransistor is capable of detecting and responding to infrared light, making it suitable for applications requiring IR sensing.

Minimum Collector-emitter Breakdown Voltage: 30 V:

With a minimum collector-emitter breakdown voltage of 30 V, this phototransistor provides reliable operation and protection against voltage surges or spikes.

Mounting Feature: SURFACE MOUNT:

The surface mounting feature simplifies the assembly process and allows for efficient production, making it a convenient choice for manufacturers.

Technical Specifications

Phototransistors QSB363 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Additional Features:

DAY LIGHT FILTER

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

1.5 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Peak Wavelength (nm):

940

Maximum Power Dissipation:

.1 W

Shape:

ROUND

Size:

1.9 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Trade Compliance

QSB363 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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