Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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QSB363 by Onsemi is a single configuration phototransistor with a size of 1.9 mm. It operates at temperatures ranging from -25 to 85 °C and has a peak wavelength of 940 nm. It is commonly used in applications requiring infrared sensing or detection.
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This phototransistor has a single configuration, making it easy to use and integrate into various applications.
With a compact size of 1.9 mm, this phototransistor can be easily installed in small spaces, making it versatile for different design requirements.
With a single function, this phototransistor simplifies circuitry and saves space, enhancing overall design efficiency.
The peak wavelength of 940 nm ensures efficient detection and response to infrared light, making it ideal for applications such as remote control systems or proximity sensors.
Being a phototransistor, this product offers high sensitivity and excellent response in converting light into electrical signals, providing accurate detection capabilities.
With a maximum operating temperature of 85°C, this phototransistor can withstand higher temperature environments, ensuring reliability and stability in various applications.
The round shape of this phototransistor allows for easy integration into designs with circular mounting holes or spaces, providing flexibility in implementation.
With a minimum operating temperature of -25°C, this phototransistor can operate in colder conditions, expanding its usability in different environments.
The matte tin terminal finish offers excellent solderability and corrosion resistance, ensuring reliable connections and long-term performance.
With a maximum power dissipation of 0.1 W, this phototransistor can handle higher power levels, making it suitable for applications requiring higher performance.
The nominal light current of 1.5 mA indicates the phototransistor's sensitivity to light, allowing precise and accurate detection in various sensing applications.
With a low maximum dark current of 100 nA, this phototransistor minimizes background noise and maintains a high signal-to-noise ratio, enhancing its reliability.
Featuring an infrared (IR) range, this phototransistor is capable of detecting and responding to infrared light, making it suitable for applications requiring IR sensing.
With a minimum collector-emitter breakdown voltage of 30 V, this phototransistor provides reliable operation and protection against voltage surges or spikes.
The surface mounting feature simplifies the assembly process and allows for efficient production, making it a convenient choice for manufacturers.
Phototransistors QSB363 attributes and parameters. Explore more Phototransistors devices from Onsemi
Additional Features:
Minimum Collector-emitter Breakdown Voltage:
Configuration:
Maximum Dark Current:
Infrared (IR) Range:
JESD-609 Code:
Nominal Light Current:
Mounting Feature:
No. of Functions:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Maximum Power Dissipation:
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Terminal Finish:
QSB363 Optoelectronics trade compliance attributes, and parameters.
HTS
8541.40.70.80
SB
PCN Design/Specification - Logo 17/Aug/2017
PCN Packaging - Mult Devices 24/Oct/2017
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LM317T
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;
NC7WZ17P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
LL4148
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
STMicroelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Grande Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Tak Cheong Electronics Holdings
CRGCQ0805F10R
TE Connectivity
TE Connectivity's CRGCQ0805F10R is a 10 ohm fixed resistor with 1% tolerance and 400 ppm/°C temperature coefficient. It is a surface mount thick film resistor in an 0805 package, suitable for applications requiring precise resistance values in compact electronic circuits.
Kec
Synsemi
M24308/2-1F
Tyco Electronics Amp
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; IEC Conformity: NO; Mixed Contacts: NO; Empty Shell: NO;
Changzhou Galaxy Century Microelectronics
NUP2105LT1G
Onsemi
NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
FDLL4148
2N7002
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;
LM2675M-ADJ/NOPB
Texas Instruments
LM2675M-ADJ/NOPB by Texas Instruments is a voltage-mode switching regulator with 1A output current, 37V max output voltage, and 260kHz max switching frequency. Ideal for automotive applications due to its -40°C to 125°C operating temperature range and compact small outline package design.
2N2222A
Solid State Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;
M39029/58-360
Carlisle Interconnect Technologies
GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;
Yangzhou Yangjie Electronics
BP103-5
Infineon Technologies
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Power Dissipation: .3 W; Maximum Dark Current: 100 nA;
QSE113
Qt Optoelectronics
QSE113 by Qt Optoelectronics is a single configuration phototransistor with a size of 0.062 mm. It operates in temperatures ranging from -40 to 100 °C and has a max power dissipation of 0.1 W. It is commonly used in applications requiring infrared detection and has a fast response time of 0.000008 s.
SFH309-3
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 200 nA;
SFH320FA-4
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Maximum Response Time: .000008 s; Peak Wavelength (nm): 900;
IS281GB
Isocom Components
IS281GB by Isocom Components is a 4.4mm single phototransistor with max operating temp of 100°C and min temp of -40°C. It has a min collector-emitter breakdown voltage of 70V, suitable for applications requiring IR detection in compact spaces.
SMD2440-011
Honeywell Sensing And Control
SMD2440-011 by Honeywell Sensing And Control is a single configuration phototransistor with a peak wavelength of 880nm. It operates in temperatures ranging from -55 to 125 °C and has a max power dissipation of 0.125W. This surface mount device is commonly used for optoelectronic applications requiring infrared detection.
ASDL-6620-D22
Broadcom
PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Size: 5 mm; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; JESD-609 Code: e3;
BPY62-4
Osram Opto Semiconductors
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Maximum Dark Current: 50 nA; Nominal Light Current: 9.6 mA; Maximum Response Time: .000009 s;
SFH3711
Osram Opto Semiconductors' SFH3711 is a single phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 100°C, with max on state current of 0.02A. Ideal for surface mount applications in optoelectronics due to its small size (0.29mm) and nominal light current of 0.0017mA.
VTT9002H
Perkinelmer
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .1 W; Maximum On State Current: .025 A; Maximum Operating Temperature: 70 Cel;
KDT00030TR
The Onsemi KDT00030TR is a phototransistor with peak wavelength of 630nm. It operates b/w -40°C to 85°C, with max dark current of 100nA. Ideal for surface mount applications in optoelectronic circuits requiring photo detection at specific wavelengths.
QSB363.ZR
QSB363.ZR by Qt Optoelectronics is a 1.9mm ROUND PHOTO TRANSISTOR with max operating temp of 85°C and min of -40°C. It has 0.7mA light current, 100nA dark current, and 30V breakdown voltage. Ideal for applications requiring precise light sensing in compact spaces.
TIL610
TIL610 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for through hole mounting in various applications.
TPS618-B
Toshiba
PHOTO TRANSISTOR; No. of Functions: 1; Configuration: SINGLE; Additional Features: SIDE VIEW; Minimum Operating Temperature: -25 Cel; Size: 1.5 mm;
TIL601
TIL601 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection in through-hole mounting configurations.
QSD723
The Onsemi QSD723 is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 30V. Ideal for optoelectronic applications requiring fast IR detection in compact spaces.
BPV11
Telefunken Microelectronics
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .0000033 s; Maximum Dark Current: 3 nA; Peak Wavelength (nm): 800;
QSD123
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; JESD-609 Code: e3; Size: 5 mm;
TPS621(B,F)
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 100 nA; JESD-609 Code: e0; Maximum Operating Temperature: 85 Cel;
OP600B
Optek Technology
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Size: 1.52 mm; Minimum Operating Temperature: -65 Cel; Nominal Light Current: .6 mA; Peak Wavelength (nm): 890;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
QSB363ZR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: MATTE TIN; No. of Functions: 1; Configuration: SINGLE; JESD-609 Code: e3;
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE; Maximum Dark Current: 100 nA;
QSB363
PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 880; Maximum Dark Current: 100 nA; Configuration: SINGLE;
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Shape: ROUND; Additional Features: DAY LIGHT FILTER; JESD-609 Code: e3;
QSB320F
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 100 Cel;
QSB320TR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin (Sn); Maximum Power Dissipation: .165 W; Additional Features: HIGH SENSITIVITY; No. of Functions: 1;
QSB363C
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Infrared (IR) Range: YES; Minimum Operating Temperature: -25 Cel; No. of Functions: 1; Nominal Light Current: 1.5 mA;
QSB363GR
QSB363GR by Onsemi is a single phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.
QSB363YR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: MATTE TIN; No. of Functions: 1; Maximum Power Dissipation: .075 W; Nominal Light Current: 1.5 mA;
QSB363C.YR
PHOTO TRANSISTOR; Nominal Light Current: 1.5 mA; Maximum Dark Current: 100 nA; Configuration: SINGLE; No. of Functions: 1; Size: 1.9 mm;
QSB363CGR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Shape: ROUND; Maximum Operating Temperature: 85 Cel; Nominal Light Current: 1.5 mA;
QSB363CYR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Maximum Operating Temperature: 85 Cel; Nominal Light Current: 1.5 mA; Minimum Operating Temperature: -25 Cel;
QSB363CZR
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Dark Current: 100 nA; Nominal Light Current: 1.5 mA; Size: 1.9 mm;
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 85 Cel; Size: 1.9 mm; Configuration: SINGLE;
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .075 W; Shape: ROUND; Minimum Operating Temperature: -25 Cel;
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