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QSE113E3R0

Onsemi

QSE113E3R0 by Onsemi

QSE113E3R0 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 30V. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.

Median Price

$0.339

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,771 parts In-Stock

1+ parts

$0.339

100+ parts

$0.271

1k+ parts

$0.220

10k+ parts

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1,771

$0.339

$0.271

$0.220

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Mouser Electronics

USA . 225 parts In-Stock

1+ parts

$0.840

100+ parts

$0.430

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$0.334

10k+ parts

$0.267

225

$0.840

$0.430

$0.334

$0.267

DigiKey

USA . 223 parts In-Stock

1+ parts

$0.880

100+ parts

$0.447

1k+ parts

$0.351

10k+ parts

$0.301

223

$0.880

$0.447

$0.351

$0.301

Chip1Stop

Japan . 4,224 parts In-Stock

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-

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$0.290

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$0.226

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$0.224

4,224

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$0.290

$0.226

$0.224

Verical

USA . 1,771 parts In-Stock

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$0.271

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$0.220

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1,771

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$0.271

$0.220

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Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$0.350

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10

$0.350

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Digiode

USA . 965 parts In-Stock

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$0.411

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965

$0.411

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Vyrian

USA . 2,802 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,897 parts In-Stock

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ComSIT USA

USA . 1,897 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,877 parts In-Stock

1+ parts

$0.241

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2,877

$0.241

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Corohmni

South Africa . 256 parts In-Stock

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$0.285

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256

$0.285

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Argo Parts USA

USA . 3,806 parts In-Stock

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$0.343

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$0.333

3,806

$0.343

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$0.333

Continental Prestige Electronics

USA . 1,410 parts In-Stock

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$0.343

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$0.336

1,410

$0.343

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$0.336

Bastille Electronics

Australia . 3,432 parts In-Stock

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$0.350

100+ parts

$0.332

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$0.316

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$0.312

3,432

$0.350

$0.332

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$0.312

Corphita

USA . 2,540 parts In-Stock

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$0.390

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$0.390

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Component Stockers USA

USA . 2,325 parts In-Stock

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$0.780

100+ parts

$0.330

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$0.280

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2,325

$0.780

$0.330

$0.280

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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Perfect Parts

USA . 19,431 parts In-Stock

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TANS Electronics

Latvia . 7,504 parts In-Stock

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Kulean Microsystems

USA . 6,738 parts In-Stock

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Problanco Electronics

Mexico . 5,484 parts In-Stock

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SupplyDigital Components

Austria . 5,463 parts In-Stock

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iodParts Technologies Inc.

India . 4,000 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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UHIMA Technologies

Türkiye . 569 parts In-Stock

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569

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Supply Digital

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543

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Overview

Experience the superior quality and reliability of Onsemi with the QSE113E3R0 phototransistor. This single configuration device offers peak performance at a size of just 1.65mm, making it ideal for a range of applications. With a peak wavelength of 880nm and a wide operating temperature range from -40°C to 100°C, this phototransistor delivers precision and efficiency. Trust in Onsemi's reputation for excellence and innovation, and unlock the full potential of your optoelectronic projects with the QSE113E3R0.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to use and integrate into various applications.

Size: 1.65 mm

Compact size allows for easy placement in tight spaces or on PCBs without taking up much room.

Peak Wavelength (nm): 880

Peak wavelength of 880nm ensures high sensitivity to specific light sources, making it ideal for targeted applications.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor technology offers high sensitivity and reliability for light detection applications.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for use in a variety of environments without risk of overheating.

Shape: ROUND

Round shape provides easy integration and alignment in optical systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality in cold environments or during temperature fluctuations.

Terminal Finish: TIN

Tin terminal finish provides good electrical conductivity and corrosion resistance for reliable performance.

Maximum Power Dissipation: 0.1 W

High maximum power dissipation capacity allows for handling of larger light signals without damage.

Nominal Light Current: 0.25 mA

Nominal light current provides a standard reference for light detection sensitivity.

Maximum Dark Current: 100 nA

Low maximum dark current ensures minimal noise and high signal-to-noise ratio in low light conditions.

Infrared (IR) Range: YES

Capability to detect and respond to infrared light expands the range of applications for this phototransistor.

Maximum Response Time: 0.000008 s

Fast response time allows for quick detection and reaction to changes in light intensity.

Minimum Collector-emitter Breakdown Voltage: 30 V

High breakdown voltage ensures safe and reliable operation in high voltage applications.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides secure and stable installation on PCBs or other surfaces.

Technical Specifications

Phototransistors QSE113E3R0 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Additional Features:

HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

.25 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.1 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Size:

1.65 mm

Sub-Category:

Photo Transistors

Terminal Finish:

TIN

Trade Compliance

QSE113E3R0 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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