Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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QSE113 by Qt Optoelectronics is a single configuration phototransistor with a size of 0.062 mm. It operates in temperatures ranging from -40 to 100 °C and has a max power dissipation of 0.1 W. It is commonly used in applications requiring infrared detection and has a fast response time of 0.000008 s.
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The small size of the phototransistor allows for easy integration into compact devices, saving space and allowing for more flexible design options.
The high maximum operating temperature ensures that the phototransistor can withstand harsh environments without malfunctioning or degrading in performance, providing reliable operation even in extreme conditions.
The round shape of the phototransistor simplifies installation and alignment, making it easier for customers to incorporate into their products without any additional modifications or adjustments.
The high nominal light current ensures that the phototransistor is highly sensitive to light, allowing for accurate detection and measurement of light levels. This enables customers to create precise systems or applications that require precise light sensing capabilities.
The phototransistor's ability to detect infrared light expands its range of applications, allowing customers to use it in various industries such as security systems, remote controls, and optical communication devices.
The extremely fast response time of the phototransistor enables real-time monitoring and control, providing customers with immediate feedback and allowing them to respond quickly to changes in light levels or optical signals.
The high minimum collector-emitter breakdown voltage ensures that the phototransistor can handle high voltage levels without damage, enhancing its reliability and durability in use.
The through-hole mounting feature simplifies the installation process, making it quick and easy for customers to integrate the phototransistor into their circuit boards or electronic assemblies. This saves time and effort during assembly and reduces the risk of misalignment or connection issues.
The low maximum dark current minimizes the unwanted current flow when there is no light detected, ensuring accurate and reliable performance even in low-light conditions. This reduces false triggers or inaccuracies in light sensing applications.
The high maximum power dissipation capability of the phototransistor allows it to handle high power loads without overheating or damage. This ensures long-lasting performance and reliability, even in demanding applications.
Phototransistors QSE113 attributes and parameters. Explore more Phototransistors devices from Qt Optoelectronics
Minimum Collector-emitter Breakdown Voltage:
Configuration:
Maximum Dark Current:
Infrared (IR) Range:
JESD-609 Code:
Nominal Light Current:
Mounting Feature:
No. of Functions:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Maximum Power Dissipation:
Maximum Response Time:
Shape:
Size:
Sub-Category:
Terminal Finish:
BAV99
Gec Plessey Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138PS,115
NXP Semiconductors
NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.
2N7002
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;
SMBJ18CA
Changzhou Galaxy Century Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Itt Components
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .005 us; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Non Repetitive Peak Forward Current: 1 A;
1554216004
Molex
WIRE AND CABLE;
MMBT2907ALT1G
MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.
1N4148
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
Concord Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;
MBR1560CT
General Instrument
MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
1N4148WS
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
Texas Instruments
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
SS14
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;
LM358MX
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
FDV304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
LM358N
Kec
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
QSC112
QSC112 by Onsemi is a 3mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, has max power dissipation of 0.1W, and response time of 0.000004s. Ideal for IR applications due to its infrared range, it features tin/lead terminal finish and through hole mounting.
TPS613
Toshiba
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: NO; No. of Functions: 1; Maximum Operating Temperature: 75 Cel; Size: 3 mm;
QSE213C
Rochester Electronics
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Peak Wavelength (nm): 880; Shape: ROUND; Maximum Operating Temperature: 100 Cel;
VEMT2523SLX01
Vishay Intertechnology
Vishay Intertechnology's VEMT2523SLX01 is an 850nm peak wavelength phototransistor with a max operating temperature of 100°C. With a nominal light current of 2.7mA and min collector-emitter breakdown voltage of 20V, it is ideal for applications requiring precise light detection in environments ranging from -40°C to 100°C.
QSD722
QSD722 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time of 6μs and collector-emitter breakdown voltage of 30V.
BPX86
Osram Opto Semiconductors
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Nickel (Sn/Ni); No. of Functions: 6; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES;
PH5503A2NA1-Y-A
Renesas Electronics
Photo Transistors;
SFH309PF4
Infineon Technologies
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0; Peak Wavelength (nm): 900;
OP800A
Optotek
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -65 Cel; Shape: ROUND; Peak Wavelength (nm): 890;
TPS621(B,F)
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 100 nA; JESD-609 Code: e0; Maximum Operating Temperature: 85 Cel;
TPS601A
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 4.7 mm; Infrared (IR) Range: YES; Maximum Dark Current: 200 nA; Minimum Collector-emitter Breakdown Voltage: 40 V;
QSD123A4R0
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Infrared (IR) Range: YES; Nominal Light Current: 4 mA; JESD-609 Code: e3;
TIL607
TIL607 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for surface mount applications in various industries.
TIL629
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel;
SFH325-2
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000006 s; Peak Wavelength (nm): 860; Maximum Power Dissipation: .165 W; Minimum Operating Temperature: -55 Cel;
PT91-21C/TR7
Everlight Electronics
The Everlight Electronics PT91-21C/TR7 is a 1.9mm phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with nominal light current of 1.5mA and max dark current of 100nA. Ideal for applications requiring IR detection and collector-emitter breakdown voltage of at least 30V.
TPS626(C)
PHOTO DARLINGTON; Shape: ROUND; Size: 1.5 mm; No. of Functions: 1; Minimum Operating Temperature: -25 Cel; Additional Features: HIGH SENSITIVITY; SIDE VIEW;
SDP8406-003
Honeywell Sensing And Control
SDP8406-003 by Honeywell is a single phototransistor with max temp of 85°C and min temp of -40°C. It has a nominal light current of 3.4mA, dark current of 100nA, and response time of 0.000015s. With a collector-emitter breakdown voltage of 30V, it is ideal for optoelectronic applications requiring precise light detection.
TIL601
TIL601 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection in through-hole mounting configurations.
TPS626(B)
PHOTO DARLINGTON; Nominal Light Current: 1.7 mA; Shape: ROUND; Maximum Dark Current: 250 nA; Size: 1.5 mm; Peak Wavelength (nm): 870;
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QSE113
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Peak Wavelength (nm): 880; No. of Functions: 1; Maximum Operating Temperature: 100 Cel;
QSE113 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time and collector-emitter breakdown voltage of 30V.
QSE114
Qt Optoelectronics
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Size: .062 mm; Maximum Power Dissipation: .1 W;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1; Peak Wavelength (nm): 880;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; JESD-609 Code: e3; Maximum Response Time: .000008 s;
QSE113E3R0
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Nominal Light Current: .25 mA; Infrared (IR) Range: YES;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; JESD-609 Code: e3; Maximum Power Dissipation: .1 W;
QSE122
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Power Dissipation: .1 W; JESD-609 Code: e3; Maximum Operating Temperature: 100 Cel;
QSE133
PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Power Dissipation: .1 W; Shape: ROUND; Maximum Operating Temperature: 100 Cel;
PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .1 W; No. of Functions: 1; Configuration: SINGLE;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000008 s; No. of Functions: 1; Infrared (IR) Range: YES;
QSE123
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; No. of Functions: 1; Maximum Power Dissipation: .1 W;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3; Size: 1.65 mm; Maximum Response Time: .000008 s;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000008 s; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;
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