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SPS289C

Onsemi

SPS289C by Onsemi

SPS289C by Onsemi is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It operates b/w -25 °C to 80°C, has max power dissipation of 0.05W, and response time of 0.00003s. Ideal for applications requiring through hole mounting and on-state current up to 0.03A.

Median Price

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Digiode

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Austria . 6,828 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

Latvia . 2,891 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 841 parts In-Stock

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Corohmni

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Overview

Unlock the power of light sensing with the SPS289C phototransistor by Onsemi. Manufactured to the highest quality standards, this phototransistor offers a peak wavelength of 850nm and a fast response time for precise detection. Ideal for applications in automation, security systems, and industrial control, this product provides reliable performance in a wide range of temperatures. Trust Onsemi's reputation for excellence and experience the value and benefits that the SPS289C brings to your projects.

Feature Benefit Bullets

Peak Wavelength (nm): 850

The peak wavelength of 850nm allows for efficient detection of light in the near-infrared spectrum, making this phototransistor suitable for a wide range of applications.

Optoelectronic Type: PHOTO DARLINGTON

The Photo Darlington optoelectronic type ensures high sensitivity and reliability in detecting light signals, making this phototransistor a great choice for light sensing applications.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this phototransistor can withstand high temperature environments, increasing its versatility in various applications.

Minimum Operating Temperature: -25 °C

The minimum operating temperature of -25 °C allows this phototransistor to function effectively in low temperature conditions, making it suitable for a wide range of environments.

Maximum Power Dissipation: 0.05 W

The low maximum power dissipation of 0.05 W ensures energy efficiency and helps prevent overheating, making this phototransistor a reliable and durable choice.

Maximum Dark Current: 1000 nA

The low maximum dark current of 1000 nA indicates minimal current flow in the absence of light, leading to accurate light detection and improved signal-to-noise ratio.

Maximum Response Time: 0.00003 s

The fast maximum response time of 0.00003 seconds enables quick detection and response to changes in light intensity, making this phototransistor ideal for high-speed applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature provides easy and secure installation of the phototransistor onto circuit boards or other devices, ensuring stable and reliable connections.

Maximum On State Current: 0.03 A

The high maximum on-state current of 0.03 A allows for the efficient switching of current in response to light signals, making this phototransistor suitable for various switching and control applications.

Technical Specifications

Phototransistors SPS289C attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Maximum Dark Current:

1000 nA

Mounting Feature:

Maximum On State Current:

.03 A

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.00003 s

Sub-Category:

Photo Transistors

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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