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SPS235C

Onsemi

SPS235C by Onsemi

The Onsemi SPS235C is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It operates b/w -25 °C to 80°C, has max power dissipation of 0.05W, and response time of 0.00003s. Ideal for applications requiring through hole mounting, it can handle max on state current of 0.03A and dark current up to 1000nA.

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Vyrian

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Problanco Electronics

Mexico . 8,270 parts In-Stock

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SupplyDigital Components

Austria . 4,062 parts In-Stock

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TANS Electronics

Latvia . 3,523 parts In-Stock

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Corphita

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UHIMA Technologies

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Kulean Microsystems

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Overview

Unlock a world of possibilities with the SPS235C phototransistor by Onsemi. Crafted with precision by a renowned manufacturer, this powerful component offers superior performance and reliability in a wide range of applications. From motion sensors to light detectors, the SPS235C delivers exceptional results through its peak wavelength of 850nm and fast response time. Trust in Onsemi's expertise and elevate your projects with the quality and value that only the SPS235C can provide.

Feature Benefit Bullets

Peak Wavelength (nm): 850

The peak wavelength of 850nm ensures high sensitivity to light in the near-infrared spectrum, making it ideal for applications requiring detection in this range.

Optoelectronic Type: PHOTO DARLINGTON

The use of a Darlington configuration enhances the current gain and sensitivity of the phototransistor, allowing for improved performance in low-light conditions.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature of 80 °C, this phototransistor is suitable for use in a wide range of environments without risk of overheating.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C enables this phototransistor to function reliably even in cold conditions, making it versatile for various applications.

Maximum Power Dissipation: 0.05 W

The low power dissipation of 0.05W helps to minimize energy consumption and heat generation, contributing to the efficiency and longevity of the device.

Maximum Dark Current: 1000 nA

The low maximum dark current of 1000nA ensures minimal current flow in the absence of light, leading to accurate and reliable light sensing performance.

Maximum Response Time: 0.00003 s

The ultra-fast maximum response time of 0.00003s enables the phototransistor to quickly detect changes in light levels, making it suitable for high-speed applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation and connection of the phototransistor on printed circuit boards, enhancing ease of use and reliability.

Maximum On State Current: 0.03 A

The high maximum on-state current of 0.03A allows the phototransistor to handle high levels of current flow when conducting, making it suitable for applications requiring robust performance.

Technical Specifications

Phototransistors SPS235C attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Maximum Dark Current:

1000 nA

Mounting Feature:

Maximum On State Current:

.03 A

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.00003 s

Sub-Category:

Photo Transistors

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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