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QSC112

Onsemi

QSC112 by Onsemi

QSC112 by Onsemi is a 3mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, has max power dissipation of 0.1W, and response time of 0.000004s. Ideal for IR applications due to its infrared range, it features tin/lead terminal finish and through hole mounting.

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TANS Electronics

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SupplyDigital Components

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Overview

Unleash the power of light with the QSC112 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality phototransistors that provide unmatched performance and reliability. The QSC112 is perfect for a wide range of applications, offering customers a versatile solution for their optoelectronic needs. Benefit from its superior design, fast response time, and high sensitivity to light. Experience the value and advantages that the QSC112 brings to your projects, making it the ideal choice for your next lighting or sensing application.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies wiring and installation, making it easy to use in various applications.

Size: 3 mm

Compact size allows for easy integration into small designs or tight spaces.

Peak Wavelength (nm): 880

Specific peak wavelength of 880nm makes it ideal for applications where sensitivity to this wavelength is required.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistors are commonly used in light sensing applications due to their high sensitivity and fast response times.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for use in a wide range of environments without the risk of overheating.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability for easy and secure connections.

Maximum Power Dissipation: 0.1 W

Low maximum power dissipation helps in maintaining the device's temperature within safe limits during operation.

Nominal Light Current: 1 mA

Nominal light current rating ensures reliable and consistent performance in varying light conditions.

Maximum Dark Current: 100 nA

Low maximum dark current allows for accurate light sensing by minimizing background interference.

Infrared (IR) Range: YES

Infrared range capability expands the range of applications where this phototransistor can be used, especially in night vision or IR sensing applications.

Maximum Response Time: 0.000004 s

Extremely fast maximum response time ensures quick detection and response to changes in light levels.

Minimum Collector-emitter Breakdown Voltage: 30 V

High minimum breakdown voltage ensures the device can handle higher voltages without failure, increasing its durability and reliability.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable physical support for the phototransistor in various applications.

Technical Specifications

Phototransistors QSC112 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e0

Nominal Light Current:

1 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.1 W

Maximum Response Time:

.000004 s

Shape:

ROUND

Size:

3 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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