Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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QSC112 by Onsemi is a 3mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, has max power dissipation of 0.1W, and response time of 0.000004s. Ideal for IR applications due to its infrared range, it features tin/lead terminal finish and through hole mounting.
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Vyrian
Digiode
Mentor Electronics Marketing, LLC
Kepictronics
Problanco Electronics
TANS Electronics
SupplyDigital Components
Corphita
Supply Digital
Corohmni
Kulean Microsystems
UHIMA Technologies
Single configuration simplifies wiring and installation, making it easy to use in various applications.
Compact size allows for easy integration into small designs or tight spaces.
Specific peak wavelength of 880nm makes it ideal for applications where sensitivity to this wavelength is required.
Phototransistors are commonly used in light sensing applications due to their high sensitivity and fast response times.
High maximum operating temperature allows for use in a wide range of environments without the risk of overheating.
Low minimum operating temperature ensures functionality even in extreme cold conditions.
Tin/lead terminal finish provides good solderability for easy and secure connections.
Low maximum power dissipation helps in maintaining the device's temperature within safe limits during operation.
Nominal light current rating ensures reliable and consistent performance in varying light conditions.
Low maximum dark current allows for accurate light sensing by minimizing background interference.
Infrared range capability expands the range of applications where this phototransistor can be used, especially in night vision or IR sensing applications.
Extremely fast maximum response time ensures quick detection and response to changes in light levels.
High minimum breakdown voltage ensures the device can handle higher voltages without failure, increasing its durability and reliability.
Through hole mounting feature provides secure and stable physical support for the phototransistor in various applications.
Phototransistors QSC112 attributes and parameters. Explore more Phototransistors devices from Onsemi
Minimum Collector-emitter Breakdown Voltage:
Configuration:
Maximum Dark Current:
Infrared (IR) Range:
JESD-609 Code:
Nominal Light Current:
Mounting Feature:
No. of Functions:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Maximum Power Dissipation:
Maximum Response Time:
Shape:
Size:
Sub-Category:
Terminal Finish:
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148WS
General Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ABS25-32.768KHZ-1-T
Abracon
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
SMBJ18CA
Transpro Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Breakdown Voltage: 21.1 V; Maximum Clamping Voltage: 29.2 V;
FT232RQ-REEL
FTDI
FTDI's FT232RQ-REEL is a USB bus controller with 32 terminals, operating at 3.3-5.25V. It supports data transfer rates up to 60MBps and clock frequency of 12.02MHz, suitable for RS232/RS422/RS485 interfaces in various applications like industrial automation and communication systems.
1N4148
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
STMicroelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;
Formosa Microsemi
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
LL4148
Weitron Technology
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Hitano Enterprise
LM358N
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
2N2222A
Fairchild Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM358ADR
Texas Instruments
LM358ADR by Texas Instruments is an operational amplifier with 2 functions, featuring a max input offset voltage of 5000 uV and nominal voltage of 5V. Widely used in applications requiring high voltage gain, it operates within a temperature range of 0-70°C and offers frequency compensation for stability.
LM555CN
Rca Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
M39029/56351
Souriau
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Insertion Tools: M81969/14-10; Tool Settings: M22520/2-10; DIN Conformity: NO;
Silicon Standard
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM107H
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
Surge Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
LM555CMX
Onsemi
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
BAV99
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BP103-6
Infineon Technologies
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .1 A; Maximum Power Dissipation: .3 W;
OP520
Optek Technology
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Infrared (IR) Range: YES; Size: 2 mm; Minimum Collector-emitter Breakdown Voltage: 30 V; Shape: RECTANGULAR;
BPY62-4
Osram Opto Semiconductors
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Maximum Dark Current: 50 nA; Nominal Light Current: 9.6 mA; Maximum Response Time: .000009 s;
QSD124
The Onsemi QSD124 is a 5mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR range detection in through hole mounting setups.
TIL603
TIL603 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection in through-hole mounting configurations.
ASDL-6770-C41
Broadcom
PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Configuration: SINGLE; Maximum Operating Temperature: 85 Cel; Shape: ROUND; No. of Functions: 1;
TIL627
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000008 s;
VTT9002H
Perkinelmer
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .1 W; Maximum On State Current: .025 A; Maximum Operating Temperature: 70 Cel;
BPX80
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; JESD-609 Code: e0; Maximum Response Time: .000008 s;
BPW76B
Vishay Intertechnology
Vishay Intertechnology's BPW76B is a 3.9mm single phototransistor with peak wavelength of 850nm. Operating b/w -55°C to 125°C, it has a max power dissipation of 0.25W and response time of 3.5μs. Ideal for applications requiring IR detection, it features a collector-emitter breakdown voltage of 70V and on-state current up to 50mA in through-hole mounting setups.
SFH314FA
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Peak Wavelength (nm): 870; JESD-609 Code: e0;
TPS616-BC
Toshiba
PHOTO TRANSISTOR; Configuration: SINGLE; Peak Wavelength (nm): 900; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .017 mA; Infrared (IR) Range: YES;
L14N2
Renesas Electronics
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 150 Cel; Peak Wavelength (nm): 880; Maximum Response Time: .000014 s; Minimum Operating Temperature: -55 Cel;
SFH300FA2
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 900; Maximum Response Time: .0000075 s; JESD-609 Code: e0;
SFH309PF2
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000005 s; Maximum Power Dissipation: .165 W; JESD-609 Code: e0;
BPY62-3
Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A;
TIL604HR2
TIL604HR2 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection in through-hole mounting setups.
SFH3710-3/4-Z
Osram Opto Semiconductors SFH3710-3/4-Z is a single phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, producing nominal light current of 0.35mA and max dark current of 50nA. Ideal for applications requiring square shape optoelectronic components in compact 0.29mm size.
OP600B
Optotek
PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Shape: ROUND; Minimum Operating Temperature: -65 Cel; Minimum Collector-emitter Breakdown Voltage: 25 V;
OP644SL
Tt Electronics Plc
OP644SL by Tt Electronics Plc is a phototransistor with peak wavelength of 930nm. It has max operating temp of 125°C and min operating temp of -65°C. Ideal for applications requiring surface mount optoelectronic components with max power dissipation of 0.05W and max on state current of 0.05A.
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QSC113
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Response Time: .000005 s; Nominal Light Current: 2.4 mA; Minimum Collector-emitter Breakdown Voltage: 30 V;
QSC114
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Dark Current: 100 nA; Size: 3 mm; Shape: ROUND;
QSC133
Qt Optoelectronics
PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00002 s; Nominal Light Current: 8 mA; Shape: ROUND;
QSC112
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: 1 mA; Size: 3 mm; No. of Functions: 1;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Infrared (IR) Range: YES; No. of Functions: 1; Maximum Power Dissipation: .1 W;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 100 nA; Shape: ROUND; Infrared (IR) Range: YES;
QSC112.C4A0
PHOTO TRANSISTOR; No. of Functions: 1; Maximum Dark Current: 100 nA; Size: 3 mm; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V;
QSC112.C4R0
PHOTO TRANSISTOR; Nominal Light Current: 1 mA; Configuration: SINGLE; Minimum Operating Temperature: -40 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V; Size: 3 mm;
QSC112.C6A0
PHOTO TRANSISTOR; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 30 V; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 100 nA; Size: 3 mm;
QSC112.C6R0
PHOTO TRANSISTOR; Minimum Operating Temperature: -40 Cel; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 100 Cel; Size: 3 mm;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 100 Cel; Shape: ROUND; Maximum Power Dissipation: .1 W;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: 2.4 mA; No. of Functions: 1; Maximum Response Time: .000005 s;
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Shape: ROUND; Peak Wavelength (nm): 880;
PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Minimum Operating Temperature: -40 Cel;
PHOTO TRANSISTOR; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -40 Cel; Nominal Light Current: 1 mA; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;
PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 30 V; Minimum Operating Temperature: -40 Cel; No. of Functions: 1; Maximum Dark Current: 100 nA; Shape: ROUND;
PHOTO TRANSISTOR; Maximum Dark Current: 100 nA; Size: 3 mm; Shape: ROUND; Nominal Light Current: 1 mA; No. of Functions: 1;
PHOTO TRANSISTOR; Minimum Operating Temperature: -40 Cel; Shape: ROUND; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Size: 3 mm;
QSC114C
PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin (Sn); No. of Functions: 1; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .1 W;
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