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QSC113

Onsemi

QSC113 by Onsemi

QSC113 by Onsemi is a 3mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W and response time of 0.000005s. Ideal for applications requiring IR detection in through hole mounting configurations.

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Digiode

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ACDS - Activité Composants Distribution Service

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TANS Electronics

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A-Z Elektronik GmbH

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Problanco Electronics

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Kulean Microsystems

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Speed Components Ltd (Excess)

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Cyclops Electronics Ltd (Excess)

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Overview

Experience the exceptional quality and reliability of the QSC113 phototransistor from Onsemi. With a peak wavelength of 880nm, this versatile component offers precise optoelectronic performance in a compact 3mm size. Ideal for applications requiring fast response times and low power consumption, the QSC113 is the perfect choice for your next project. Trust in Onsemi's reputation for excellence and unlock the value and benefits that this high-performance phototransistor brings to your designs.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies installation and use, making it suitable for various applications.

Size: 3 mm

Compact size allows for easy integration into different devices or equipment.

Peak Wavelength (nm): 880

Optimal peak wavelength for efficient detection of light in the specified range.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor design enhances sensitivity to light, ensuring accurate light detection.

Maximum Operating Temperature: 100 °C

High maximum operating temperature provides reliability in various environmental conditions.

Shape: ROUND

Round shape allows for uniform light collection from all angles, improving performance.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature enables use in cold environments without performance issues.

Terminal Finish: Matte Tin (Sn)

Matte tin finish ensures reliable electrical connections for long-term use.

Maximum Power Dissipation: 0.1 W

Low power dissipation helps in energy efficiency and prevents overheating.

Nominal Light Current: 2.4 mA

Nominal light current ensures consistent performance in detecting varying light levels.

Maximum Dark Current: 100 nA

Low dark current minimizes noise interference for accurate light detection.

Infrared (IR) Range: YES

Capability to detect infrared light expands the range of applications for the phototransistor.

Maximum Response Time: 0.000005 s

Ultra-fast response time allows for quick detection and response to changes in light levels.

Minimum Collector-emitter Breakdown Voltage: 30 V

High breakdown voltage ensures reliability and protection against electrical surges.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting simplifies installation and ensures secure placement in devices or circuit boards.

Technical Specifications

Phototransistors QSC113 attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

2.4 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.1 W

Maximum Response Time:

.000005 s

Shape:

ROUND

Size:

3 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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