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LS600

Texas Instruments

LS600 by Texas Instruments

LS600 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, has response time of 0.0000015s, and collector-emitter breakdown voltage of 50V. Ideal for applications requiring infrared detection in a round shape through-hole mount configuration.

Median Price

$1.290

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1 parts In-Stock

1+ parts

-

100+ parts

$1.290

1k+ parts

$1.160

10k+ parts

$1.090

1

-

$1.290

$1.160

$1.090

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,859 parts In-Stock

1+ parts

$1.358

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3,859

$1.358

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Vyrian

USA . 3,165 parts In-Stock

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3,165

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Corel Iberica Componentes, S.L.

Spain . 20 parts In-Stock

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20

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 413 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

$1.456

10k+ parts

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413

$0.097

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$1.456

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DigiPath Technology Company

USA . 207 parts In-Stock

1+ parts

$0.107

100+ parts

$0.098

1k+ parts

-

10k+ parts

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207

$0.107

$0.098

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IDEA Electronic Components Group

UK . 1,568 parts In-Stock

1+ parts

$0.109

100+ parts

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1k+ parts

$0.098

10k+ parts

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1,568

$0.109

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$0.098

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ChromeModa Solutions

Germany . 147 parts In-Stock

1+ parts

$0.109

100+ parts

$0.089

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-

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147

$0.109

$0.089

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Corphita

USA . 542 parts In-Stock

1+ parts

$1.287

100+ parts

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542

$1.287

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Assy Fe

Spain . 2 parts In-Stock

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Overview

Elevate your projects with the LS600 by Texas Instruments, a top-of-the-line phototransistor that guarantees unrivaled quality and performance. With a peak wavelength of 900nm, this device offers exceptional sensitivity in capturing light signals. Whether you are working on industrial automation, security systems, or medical equipment, the LS600 ensures precise and reliable results. Trust in the renowned manufacturer, Texas Instruments, to deliver cutting-edge technology that surpasses expectations. Embrace innovation and efficiency with the LS600, providing value, reliability, and superior performance for all your optoelectronic needs.

Feature Benefit Bullets

Peak Wavelength (nm): 900

The 900nm peak wavelength makes this phototransistor ideal for applications requiring detection in the infrared range.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this phototransistor is suitable for use in a variety of environments without the risk of overheating.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C ensures that this phototransistor can reliably function in cold conditions.

Maximum Response Time: 0.0000015 s

The quick maximum response time of 0.0000015 seconds enables fast detection and response in applications where speed is crucial.

Nominal Light Current: 0.8 mA

The high nominal light current of 0.8 mA allows for accurate detection and measurement of light levels in various scenarios.

Maximum Power Dissipation: 0.05 W

With a low maximum power dissipation of 0.05 W, this phototransistor helps in minimizing energy consumption and heat generation.

Technical Specifications

Phototransistors LS600 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

.8 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.0000015 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

LS600 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5961-00-488-4832, 5961004884832

NIIN

004884832

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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