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LS602

Texas Instruments

LS602 by Texas Instruments

LS602 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection in through-hole mounting configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,991 parts In-Stock

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Digiode

USA . 457 parts In-Stock

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457

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Electronic Expediters

USA . 22 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 740 parts In-Stock

1+ parts

$0.408

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$1.590

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740

$0.408

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DigiPath Technology Company

USA . 2,052 parts In-Stock

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$0.449

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$0.413

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2,052

$0.449

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ChromeModa Solutions

Germany . 840 parts In-Stock

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$0.458

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$0.376

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840

$0.458

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IDEA Electronic Components Group

UK . 252 parts In-Stock

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$0.458

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$0.412

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252

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AZTECH Wire

Italy . 617 parts In-Stock

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$10.890

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One Stop Electronics

USA . 581 parts In-Stock

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$14.100

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Corphita

USA . 1,270 parts In-Stock

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Overview

Experience the superior quality of the LS602 phototransistor by Texas Instruments. With a peak wavelength of 900nm, this product is ideal for applications requiring precise light detection. Trust in the renowned reputation of Texas Instruments for reliability and performance. The LS602 offers customers value with its fast response time, high sensitivity to light, and wide operating temperature range. Whether used in industrial automation, security systems, or medical devices, this phototransistor delivers exceptional results. Invest in the LS602 and elevate your projects to new heights of efficiency and accuracy.

Feature Benefit Bullets

Peak Wavelength (nm): 900

The peak wavelength of 900 nm makes this phototransistor suitable for applications requiring detection in the infrared spectrum.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor, this product offers high sensitivity to light, making it ideal for light sensing applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this phototransistor can withstand high temperature environments.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C ensures the phototransistor can also function effectively in cold environments.

Maximum Response Time: 0.0000015 s

The fast maximum response time of 0.0000015 seconds allows for quick detection and response to changes in light levels.

Technical Specifications

Phototransistors LS602 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

.5 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Peak Wavelength (nm):

900

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.0000015 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

LS602 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5961-00-241-3925, 5961002413925

NIIN

002413925

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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