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SFH3219

Infineon Technologies

SFH3219 by Infineon Technologies

Infineon's SFH3219 phototransistor operates in -40 to 100°C range with peak wavelength of 950nm. With max power dissipation of 0.165W, it handles on-state current up to 0.015A. Ideal for surface mount applications, it features tin/lead terminal finish and low dark current of 50nA.

Median Price

$0.792

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8,060 parts In-Stock

1+ parts

$0.780

100+ parts

$0.394

1k+ parts

$0.312

10k+ parts

$0.244

8,060

$0.780

$0.394

$0.312

$0.244

Newark

USA . 2,450 parts In-Stock

1+ parts

$0.803

100+ parts

$0.406

1k+ parts

$0.321

10k+ parts

-

2,450

$0.803

$0.406

$0.321

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Distributors (In-Stock)

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Digiode

USA . 594 parts In-Stock

1+ parts

$0.732

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-

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594

$0.732

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Vyrian

USA . 681 parts In-Stock

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$0.770

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681

$0.770

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Rutronik

Germany . 138,000 parts In-Stock

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$0.248

138,000

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$0.248

ComSIT Distribution GmbH

Germany . 4,760 parts In-Stock

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4,760

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LIBRA Elektronik GmbH

Germany . 1,471 parts In-Stock

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1,471

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ACDS - Activité Composants Distribution Service

France . 300 parts In-Stock

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300

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 1,210 parts In-Stock

1+ parts

$0.468

100+ parts

$0.449

1k+ parts

$0.431

10k+ parts

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1,210

$0.468

$0.449

$0.431

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Corphita

USA . 23 parts In-Stock

1+ parts

$0.693

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23

$0.693

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Perfect Parts

USA . 67,189 parts In-Stock

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67,189

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Authorized Procurement Solutions

USA . 60,000 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Overview

Discover the SFH3219 by Infineon Technologies, a top-notch phototransistor designed with precision and reliability in mind. Infineon Technologies is a renowned manufacturer known for its superior quality products. The SFH3219 offers a peak wavelength of 950 nm, making it ideal for a wide range of applications. With a maximum operating temperature of 100°C and a minimum operating temperature of -40°C, this phototransistor can withstand harsh environments. Its surface mount feature allows for easy installation, while its low power dissipation and dark current make it energy-efficient. Trust in the SFH3219 to deliver exceptional performance and value for your projects.

Feature Benefit Bullets

Peak Wavelength (nm): 950

The peak wavelength of 950 nm makes this phototransistor suitable for applications that require detection or sensing in the infrared spectrum.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature of 100°C, this phototransistor can withstand harsh environmental conditions without compromising performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures that this phototransistor can operate effectively even in extremely cold environments.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides excellent solderability and reliability, making it easy to integrate this phototransistor into electronic circuits.

Maximum Power Dissipation: 0.165 W

With a maximum power dissipation of 0.165 W, this phototransistor can handle high power loads without overheating, ensuring long-term reliability.

Maximum Dark Current: 50 nA

The low maximum dark current of 50 nA ensures minimal leakage current when the phototransistor is in the off state, leading to accurate and reliable light sensing.

Mounting Feature: SURFACE MOUNT

The surface mounting feature makes it easy to directly solder this phototransistor onto a PCB, streamlining the assembly process and saving space.

Maximum On State Current: 0.015 A

With a maximum on-state current of 0.015 A, this phototransistor can handle high current loads when exposed to light, making it suitable for a wide range of applications.

Technical Specifications

Phototransistors SFH3219 attributes and parameters. Explore more Phototransistors devices from Infineon Technologies

Specs

Maximum Dark Current:

50 nA

JESD-609 Code:

e0

Mounting Feature:

Maximum On State Current:

.015 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Peak Wavelength (nm):

950

Maximum Power Dissipation:

.165 W

Sub-Category:

Photo Transistors

Terminal Finish:

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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